公开(公告)号：EP1339110A9

公开(公告)日：2004-01-28

申请号：EP02425087.0

申请日：2002-02-20

Applicant: STMicroelectronics S.r.l. ,  OVONYX Inc.

Inventor： Bez, Roberto ,  Pellizzer, Fabio ,  Tosi, Marina ,  Zonca, Romina

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/06 ,  H01L27/2445 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1691

Abstract: The phase change memory cell (5) is formed by a resistive element (22) and by a memory region (38) of a phase change material. The resistive element has a first thin portion having a first sublithographic dimension in a first direction (Y) ; and the memory region (38) has a second thin portion (38a) having a second sublithographic dimension in a second direction (X) transverse to the first dimension. The first thin portion (22) and the second thin portion (38a) are in direct electrical contact and define a contact area (58) of sublithographic extension. The second thin portion (38a) is delimited laterally by oxide spacer portions (55a) surrounded by a mold layer (49) which defines a lithographic opening (51). The spacer portions (55a) are formed after forming the lithographic opening, by a spacer formation technique.

公开(公告)号：EP1331675A1

公开(公告)日：2003-07-30

申请号：EP02425013.6

申请日：2002-01-17

Applicant: STMicroelectronics S.r.l. ,  OVONYX Inc.

Inventor： Zonca, Romina ,  Marangon, Maria Santina ,  De Santi, Giorgio

IPC: H01L45/00

CPC classification number: G11C13/0069 ,  G11C13/0004 ,  G11C2013/008 ,  G11C2213/52 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

Abstract: A vertical-current-flow resistive element (12) comprising a monolithic region (12) having a first portion (12a) and a second portion (12b) arranged on top of one another and formed by a single material. The first portion has a first resistivity, and the second portion (12b) has a second resistivity, lower than the first resistivity. To this aim, a monolithic region with a uniform resistivity and a height greater than at least one of the other dimensions is first formed; then the resistivity of the first portion (12a) is increased by introducing, from the top, species that form a prevalently covalent bond with the conductive material of the monolithic region, so that the concentration of said species becomes higher in the first portion (12a) than in the second portion (12b). Preferably, the conductive material is a binary or ternary alloy, chosen from among TiAl, TiSi 2 , Ta, WSi, and the increase in resistivity is obtained by nitridation.

Abstract translation: 的垂直电流流电阻元件（12）包括具有第一部分（12a）和（12b）的布置在彼此的顶部上，并通过一个单一的材料形成的第二部分的单片区域（12）。 所述第一部分具有第一电阻率，并且所述第二部分（12b）具有第二电阻率，比所述第一电阻率。 为了这个目的，具有均匀的电阻率和高度比其他尺寸首先形成的至少一个大的整体区域; 然后所述第一部分（12a）的电阻率是通过引入，从顶部增加，物种确实形成具有单片区域的导电材料的普遍地共价键，所以没有所述物质的浓度变得在第一部分更高（12A ）比（在第二部分12b）。 优选地，导电材料是二元或三元合金，从TiAl金属，的TiSi2，钽，的WSi选自，和电阻率的增加是由氮化获得。