公开(公告)号：WO2023033199A1

公开(公告)日：2023-03-09

申请号：PCT/KR2021/011669

申请日：2021-08-31

Applicant: STRATIO

Inventor： LEE, Jae Hyung ,  KIM, Youngsik ,  NA, Yeul

IPC: G06T7/00 ,  G06N20/20

Abstract: A method of assessing a similarity between a product image and reference drawings may include obtaining one or more feature vectors corresponding to one or more images of a product; retrieving a plurality of trained models built to determine respective similarities to respective reference products; for a respective trained model, of the plurality of trained models, built to determine a respective similarity between the product and the respective reference product, applying the respective trained model to a feature vector of the one or more feature vectors corresponding to the one or more images of the product for determining a similarity between an image of the one or more images of the product and an image of the respective reference product; and providing the respective similarity between the product and the respective reference product. A method of such building models is also described.

公开(公告)号：EP3528288B1

公开(公告)日：2020-08-26

申请号：EP18214935.1

申请日：2014-06-20

Applicant: Stratio, Inc.

Inventor： LEE, Jae, Hyung ,  NA, Yeul ,  KIM, Youngsik ,  JUNG, Woo-Shik

IPC: H01L27/146

公开(公告)号：EP3608944A1

公开(公告)日：2020-02-12

申请号：EP19188206.7

申请日：2016-05-23

Applicant: Stratio, Inc.

Inventor： LEE, Jae Hyung ,  NA, Yeul ,  KIM, Youngsik ,  JUNG, Woo-shik

IPC: H01L21/20 ,  H01L21/308

Abstract: A method for removing nuclei formed during a selective epitaxial growth process includes epitaxially growing a first group of one or more semiconductor structures over a substrate with one or more mask layers. A second group of a plurality of semiconductor structures is formed on the one or more mask layers. The method also includes forming one or more protective layers over the first group of one or more semiconductor structures. At least a subset of the second group of the plurality of semiconductor structures is exposed from the one or more protective layers. The method further includes, subsequent to forming the one or more protective layers over the first group of one or more semiconductor structures, etching at least the subset of the second group of the plurality of semiconductor structures.

公开(公告)号：EP3701217A1

公开(公告)日：2020-09-02

申请号：EP18870058.7

申请日：2018-10-29

Applicant: Stratio

Inventor： LEE, Jae Hyung ,  KIM, Youngsik ,  NA, Yeul ,  KANG, Juhyung

IPC: G01B9/00 ,  G01J1/00 ,  G01J1/10 ,  G01J1/16 ,  G01J1/42

公开(公告)号：EP3011594B1

公开(公告)日：2018-12-26

申请号：EP14814462.9

申请日：2014-06-20

Applicant: Stratio, Inc.

Inventor： LEE, Jae, Hyung ,  NA, Yeul ,  KIM, Youngsik ,  JUNG, Woo-Shik

IPC: H01L27/146

CPC classification number: H01L31/1136 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/14649 ,  H01L27/14689 ,  H01L31/1804 ,  H04N5/361 ,  H04N5/378

Abstract: A device for sensing light includes a first semiconductor region doped with a dopant of a first type and a second semiconductor region doped with a dopant of a second type. The second semiconductor region is positioned above the first semiconductor region. The device includes a gate insulation layer; a gate, a source, and a drain. The second semiconductor region has a top surface that is positioned toward the gate insulation layer and a bottom surface that is positioned opposite to the top surface of the second semiconductor region. The second semiconductor region has an upper portion that includes the top surface of the second semiconductor region and a lower portion that includes the bottom surface of the second semiconductor region and is mutually exclusive with the upper portion. The first semiconductor region is in contact with both the upper portion and the lower portion of the second semiconductor region.

公开(公告)号：EP3011594A2

公开(公告)日：2016-04-27

申请号：EP14814462.9

申请日：2014-06-20

Applicant: Stratio, Inc.

Inventor： LEE, Jae, Hyung ,  NA, Yeul ,  KIM, Youngsik ,  JUNG, Woo-Shik

IPC: H01L27/14 ,  H01L27/142 ,  H01L27/146

CPC classification number: H01L31/1136 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/14649 ,  H01L27/14689 ,  H01L31/1804 ,  H04N5/361 ,  H04N5/378

Abstract: A device for sensing light includes a first semiconductor region doped with a dopant of a first type and a second semiconductor region doped with a dopant of a second type. The second semiconductor region is positioned above the first semiconductor region. The device includes a gate insulation layer; a gate, a source, and a drain. The second semiconductor region has a top surface that is positioned toward the gate insulation layer and a bottom surface that is positioned opposite to the top surface of the second semiconductor region. The second semiconductor region has an upper portion that includes the top surface of the second semiconductor region and a lower portion that includes the bottom surface of the second semiconductor region and is mutually exclusive with the upper portion. The first semiconductor region is in contact with both the upper portion and the lower portion of the second semiconductor region.

Abstract translation: 用于感测光的装置包括掺杂有第一类型的掺杂剂的第一半导体区域和掺杂有第二类型的掺杂剂的第二半导体区域。 第二半导体区域位于第一半导体区域的上方。 该器件包括栅极绝缘层; 一个门，一个源头和一个排水沟。 第二半导体区域具有朝向栅极绝缘层定位的顶表面和与第二半导体区域的顶表面相对定位的底表面。 第二半导体区域具有包括第二半导体区域的顶表面的上部和包括第二半导体区域的底表面并且与上部相互排斥的下部。 第一半导体区域与第二半导体区域的上部和下部两者接触。