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公开(公告)号：WO2017139008A1
公开(公告)日：2017-08-17
申请号：PCT/US2016/064585
申请日：2016-12-02
Applicant: STRATIO , STRATIO, INC.
Inventor： LEE, Jae Hyung , KANG, Juhyung , KIM, Youngsik , NA, Yeul , JUNG, Wooshik
CPC classification number: G01J1/42 , G01J1/16 , G01J1/44 , G01J3/0208 , G01J3/021 , G01J3/14 , G01J3/1838 , G01J3/2803 , G01J3/2823 , G01J5/024 , G01J5/10 , G01J2003/1861 , G01J2003/2826 , H01L27/1461 , H01L27/14616 , H01L27/14645 , H01L27/14649 , H01L27/14689
Abstract: An apparatus for analyzing visible and shortwave infrared light includes an input aperture for receiving light that includes a visible wavelength component and a shortwave infrared wavelength component; a first set of one or more lenses configured to relay light from the input aperture; one or more dispersive optical elements configured to disperse light from the first set of one or more lenses; a second set of one or more lenses configured to focus the dispersed light from the one or more dispersive optical elements; and an array detector configured for converting the light from the second set of one or more lenses to electrical signals that include electrical signals indicating intensity of the visible wavelength component and electrical signals indicating intensity of the shortwave infrared wavelength component.
Abstract translation: 一种用于分析可见光和短波红外光的装置包括：输入孔，用于接收包括可见光波长成分和短波红外波长成分的光; 第一组一个或多个透镜，其被配置为中继来自所述输入孔径的光; 一个或多个色散光学元件，其被配置为分散来自所述第一组一个或多个透镜的光; 第二组一个或多个透镜，其被配置为聚焦来自所述一个或多个色散光学元件的色散光; 以及阵列检测器，被配置用于将来自第二组一个或多个透镜的光转换为包括指示可见波长成分的强度的电信号和指示短波红外波长成分的强度的电信号的电信号。
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Patent Agency Ranking
公开(公告)号：WO2016191371A1
公开(公告)日：2016-12-01
申请号：PCT/US2016/033783
申请日：2016-05-23
Applicant: STRATIO, INC. , STRATIO
Inventor： LEE, Jae Hyung , NA, Yeul , KIM, Youngsik , JUNG, Woo-shik
IPC: H01L21/02 , H01L21/308
CPC classification number: H01L21/3081 , H01L21/02057 , H01L21/02082 , H01L21/02636 , H01L21/30604
Abstract: A method for removing nuclei formed during a selective epitaxial growth process includes epitaxially growing a first group of one or more semiconductor structures over a substrate with one or more mask layers. A second group of a plurality of semiconductor structures is formed on the one or more mask layers. The method also includes forming one or more protective layers over the first group of one or more semiconductor structures. At least a subset of the second group of the plurality of semiconductor structures is exposed from the one or more protective layers. The method further includes, subsequent to forming the one or more protective layers over the first group of one or more semiconductor structures, etching at least the subset of the second group of the plurality of semiconductor structures.
Abstract translation: 一种用于去除在选择性外延生长工艺过程中形成的核的方法包括用一个或多个掩模层在衬底上外延生长第一组一个或多个半导体结构。 在一个或多个掩模层上形成第二组多个半导体结构。 该方法还包括在一个或多个半导体结构的第一组上形成一个或多个保护层。 多个半导体结构的第二组的至少一个子集从一个或多个保护层露出。 该方法还包括：在一个或多个半导体结构的第一组上形成一个或多个保护层之后，至少蚀刻多个半导体结构的第二组的子集。
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公开(公告)号：EP3111466A1
公开(公告)日：2017-01-04
申请号：EP16750355.6
申请日：2016-05-23
Applicant: Stratio, Inc. , STRATIO
Inventor： LEE, Jae Hyung , NA, Yeul , KIM, Youngsik , JUNG, Woo-Shik
IPC: H01L21/02
CPC classification number: H01L21/3081 , H01L21/02057 , H01L21/02082 , H01L21/02636 , H01L21/30604
Abstract: A method for removing nuclei formed during a selective epitaxial growth process includes epitaxially growing a first group of one or more semiconductor structures over a substrate with one or more mask layers. A second group of a plurality of semiconductor structures is formed on the one or more mask layers. The method also includes forming one or more protective layers over the first group of one or more semiconductor structures. At least a subset of the second group of the plurality of semiconductor structures is exposed from the one or more protective layers. The method further includes, subsequent to forming the one or more protective layers over the first group of one or more semiconductor structures, etching at least the subset of the second group of the plurality of semiconductor structures.
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4.发明申请
公开(公告)号：WO2023033199A1
公开(公告)日：2023-03-09
申请号：PCT/KR2021/011669
申请日：2021-08-31
Applicant: STRATIO
Inventor： LEE, Jae Hyung , KIM, Youngsik , NA, Yeul
Abstract: A method of assessing a similarity between a product image and reference drawings may include obtaining one or more feature vectors corresponding to one or more images of a product; retrieving a plurality of trained models built to determine respective similarities to respective reference products; for a respective trained model, of the plurality of trained models, built to determine a respective similarity between the product and the respective reference product, applying the respective trained model to a feature vector of the one or more feature vectors corresponding to the one or more images of the product for determining a similarity between an image of the one or more images of the product and an image of the respective reference product; and providing the respective similarity between the product and the respective reference product. A method of such building models is also described.
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公开(公告)号：EP3608944A1
公开(公告)日：2020-02-12
申请号：EP19188206.7
申请日：2016-05-23
Applicant: Stratio, Inc.
Inventor： LEE, Jae Hyung , NA, Yeul , KIM, Youngsik , JUNG, Woo-shik
IPC: H01L21/20 , H01L21/308
Abstract: A method for removing nuclei formed during a selective epitaxial growth process includes epitaxially growing a first group of one or more semiconductor structures over a substrate with one or more mask layers. A second group of a plurality of semiconductor structures is formed on the one or more mask layers. The method also includes forming one or more protective layers over the first group of one or more semiconductor structures. At least a subset of the second group of the plurality of semiconductor structures is exposed from the one or more protective layers. The method further includes, subsequent to forming the one or more protective layers over the first group of one or more semiconductor structures, etching at least the subset of the second group of the plurality of semiconductor structures.
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公开(公告)号：EP3701217A1
公开(公告)日：2020-09-02
申请号：EP18870058.7
申请日：2018-10-29
Applicant: Stratio
Inventor： LEE, Jae Hyung , KIM, Youngsik , NA, Yeul , KANG, Juhyung
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