-
公开(公告)号：US10147854B2
公开(公告)日：2018-12-04
申请号：US15388468
申请日：2016-12-22
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Saulius Smetona , Alexander Dobrinsky , Michael Shur , Mikhail Gaevski
IPC: H01L33/56 , H01L33/48 , H01L33/50 , H01L33/58 , H01L23/00 , H01L33/00 , G02B3/00 , G02B6/42 , B29L31/00 , B29L31/34 , B29C51/12
Abstract: A solution for packaging an optoelectronic device using an ultraviolet transparent polymer is provided. The ultraviolet transparent polymer material can be placed adjacent to the optoelectronic device and/or a device package on which the optoelectronic device is mounted. Subsequently, the ultraviolet transparent polymer material can be processed to cause the ultraviolet transparent polymer material to adhere to the optoelectronic device and/or the device package. The ultraviolet transparent polymer can be adhered in a manner that protects the optoelectronic device from the ambient environment.
-
公开(公告)号：US20180323345A1
公开(公告)日：2018-11-08
申请号：US16025186
申请日：2018-07-02
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Dobrinsky , Maxim S. Shatalov , Mikhail Gaevski , Michael Shur
IPC: H01L33/38 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/40 , H01L33/46 , H01L33/00 , H01L31/0352 , H01L31/0236 , H01L31/0304 , H01L31/0224 , H01L31/0232 , H01L31/0216 , H01L31/18
CPC classification number: H01L33/387 , H01L31/02161 , H01L31/022408 , H01L31/02327 , H01L31/02363 , H01L31/03048 , H01L31/035236 , H01L31/1848 , H01L31/1852 , H01L31/1864 , H01L33/007 , H01L33/0095 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/145 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/405 , H01L33/46 , H01L2933/0016 , H01L2933/0025 , H01L2933/0091
Abstract: An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include an n-type semiconductor layer having a surface. A mesa can be located over a first portion of the surface of the n-type semiconductor layer and have a mesa boundary, which has a shape including a plurality of interconnected fingers. The n-type semiconductor layer can have a shape at least partially defined by the mesa boundary. A first n-type contact layer can be located adjacent to another portion of the n-type semiconductor contact layer, where the first n-type contact layer forms an ohmic contact with the n-type semiconductor layer. A second contact layer can be located over a second portion of the n-type semiconductor contact layer, where the second contact layer is formed of a reflective material.
-
公开(公告)号：US10090210B2
公开(公告)日：2018-10-02
申请号：US15283459
申请日：2016-10-03
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Mikhail Gaevski , Igor Agafonov , Robert M. Kennedy , Alexander Dobrinsky , Michael Shur , Emmanuel Lakios
IPC: H01L21/687 , H01L21/66 , H01L21/67 , H01L21/302 , H01L21/02 , H01L29/06 , C23C16/458 , C23C16/46
Abstract: A metal-organic chemical vapor deposition (MOCVD) growth with temperature controlled layer is described. A substrate or susceptor can have a temperature controlled layer formed thereon to adjust the temperature uniformity of a MOCVD growth process used to epitaxially grow semiconductor layers. In one embodiment, the substrate and/or the susceptor can be profiled with a shape that improves temperature uniformity during the MOCVD growth process. The profiled shape can be formed with material that provides a desired temperature distribution to the substrate that is in accordance with a predetermined temperature profile for the substrate for a particular MOCVD process.
-
公开(公告)号：US20180069154A1
公开(公告)日：2018-03-08
申请号：US15798909
申请日：2017-10-31
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Dobrinsky , Maxim S. Shatalov , Mikhail Gaevski , Michael Shur
CPC classification number: H01L33/405 , H01L31/022408 , H01L31/02327 , H01L31/03048 , H01L31/1848 , H01L31/1852 , H01L33/007 , H01L33/0075 , H01L33/025 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/44 , H01L33/46 , H01L2933/0016 , H01L2933/0091
Abstract: An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include an n-type semiconductor layer having a surface. A mesa can be located over a first portion of the surface of the n-type semiconductor layer and have a mesa boundary. An n-type contact region can be located over a second portion of the surface of the n-type semiconductor contact layer entirely distinct from the first portion, and be at least partially defined by the mesa boundary. A first n-type metallic contact layer can be located over at least a portion of the n-type contact region in proximity of the mesa boundary, where the first n-type metallic contact layer forms an ohmic contact with the n-type semiconductor layer. A second metallic contact layer can be located over a second portion of the n-type contact region, where the second metallic contact layer is formed of a reflective metallic material.
-
公开(公告)号：US09660043B2
公开(公告)日：2017-05-23
申请号：US14636546
申请日：2015-03-03
Applicant: Sensor Electronic Technology, Inc.
Inventor： Mikhail Gaevski , Grigory Simin , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
IPC: H01L29/45 , H01L29/20 , H01L21/285 , H01L29/417 , H01L33/38 , H01L29/778
CPC classification number: H01L29/452 , H01L21/28575 , H01L21/28587 , H01L21/28593 , H01L29/2003 , H01L29/4175 , H01L29/41766 , H01L29/7787 , H01L33/382 , H01L2933/0016
Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.
-
Patent Agency Ranking
公开(公告)号：US09406840B2
公开(公告)日：2016-08-02
申请号：US14984342
申请日：2015-12-30
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Jinwei Yang , Remigijus Gaska , Mikhail Gaevski
CPC classification number: H01L33/06 , H01L33/007 , H01L33/18 , H01L33/30 , H01L33/32 , H01L33/382 , H01L2224/14 , H01L2933/0016 , H01S5/3209 , H01S5/3413 , H01S5/34333
Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.
-
公开(公告)号：US20160064631A1
公开(公告)日：2016-03-03
申请号：US14938437
申请日：2015-11-11
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Saulius Smetona , Alexander Dobrinsky , Michael Shur , Mikhail Gaevski
CPC classification number: H01L33/0095 , B29C51/12 , B29L2031/3481 , B29L2031/747 , H01L24/97 , H01L33/56 , H01L2224/14 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0058
Abstract: A solution for packaging an optoelectronic device using an ultraviolet transparent polymer is provided. The ultraviolet transparent polymer material can be placed adjacent to the optoelectronic device and/or a device package on which the optoelectronic device is mounted. Subsequently, the ultraviolet transparent polymer material can be processed to cause the ultraviolet transparent polymer material to adhere to the optoelectronic device and/or the device package. The ultraviolet transparent polymer can be adhered in a manner that protects the optoelectronic device from the ambient environment.
Abstract translation: 提供了一种使用紫外线透明聚合物包装光电器件的解决方案。 紫外线透明聚合物材料可以放置在光电子器件和/或其上安装有光电器件的器件封装附近。 随后，可以处理紫外线透明聚合物材料以使紫外线透明聚合物材料粘附到光电子器件和/或器件封装上。 紫外线透明聚合物可以以保护光电子器件免受环境环境的方式粘附。
-
公开(公告)号：US11791438B2
公开(公告)日：2023-10-17
申请号：US17198491
申请日：2021-03-11
Applicant: Sensor Electronic Technology, Inc.
Inventor： Mikhail Gaevski , Alexander Dobrinsky , Maxim S. Shatalov , Michael Shur
CPC classification number: H01L33/0075 , H01L21/6835 , H01L33/007 , H01L33/0093 , H01L33/02 , H01L33/06 , H01L33/32 , H01S5/3209 , H01S5/34333 , H01L21/0242 , H01L21/0254 , H01L21/02458 , H01L21/02664 , H01L2221/68368 , H01L2221/68381
Abstract: A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.
-
公开(公告)号：US20180315886A1
公开(公告)日：2018-11-01
申请号：US16012943
申请日：2018-06-20
Applicant: Sensor Electronic Technology, Inc.
Inventor： Mikhail Gaevski , Alexander Dobrinsky , Maxim S. Shatalov , Michael Shur
Abstract: A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.
-
公开(公告)号：US09748440B2
公开(公告)日：2017-08-29
申请号：US15225382
申请日：2016-08-01
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Jinwei Yang , Remigijus Gaska , Mikhail Gaevski
IPC: H01L33/06 , H01L33/00 , H01L33/18 , H01L33/38 , H01S5/022 , H01L33/30 , H01S5/343 , H01S5/32 , H01S5/34
CPC classification number: H01L33/06 , H01L33/007 , H01L33/18 , H01L33/30 , H01L33/382 , H01L2224/14 , H01S5/0224 , H01S5/3209 , H01S5/3413 , H01S5/34333
Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.
-
-
-
-
-
-
-
-
-
Search Results
45
records
(took 0.035 seconds)
