MEMS device and method of manufacturing same
    12.
    发明授权
    MEMS device and method of manufacturing same 有权
    MEMS器件及其制造方法

    公开(公告)号:US08916407B1

    公开(公告)日:2014-12-23

    申请号:US13837407

    申请日:2013-03-15

    Abstract: A method of manufacturing a micromachined resonator having a moveable member comprising forming the moveable member from a material having a first concentration of dopants of a first impurity type, depositing a dopant carrier layer on or over at least a portion of the moveable member, wherein the dopant carrier layer includes one or more dopants of the first impurity type, transferring at least a portion of the one or more dopants from the dopant carrier layer to the moveable member, wherein, in response, the concentration of dopants of the first impurity type in the moveable member increases (for example, to greater than 1019 cm−3, and preferably between 1019 cm−3 and 1021 cm−3). The method further includes removing the dopant carrier layer and may include providing an encapsulation structure over the moveable member of the micromachined resonator.

    Abstract translation: 一种制造具有可移动构件的微加工谐振器的方法,包括由具有第一杂质类型的第一掺杂浓度的材料形成可移动构件,在该可动构件的至少一部分上或之上沉积掺杂剂载体层,其中, 掺杂剂载体层包括一种或多种第一杂质类型的掺杂剂,将一种或多种掺杂剂的至少一部分从掺杂剂载体层转移到可移动构件,其中,作为响应,第一杂质类型的掺杂剂的浓度 可移动构件增加(例如,大于1019cm-3,优选在1019cm-3和1021cm-3之间)。 该方法还包括去除掺杂剂载体层,并且可以包括在微加工谐振器的可移动构件之上提供封装结构。

    Encapsulated microelectromechanical structure

    公开(公告)号:US10450190B2

    公开(公告)日:2019-10-22

    申请号:US16106649

    申请日:2018-08-21

    Abstract: In a MEMS device, an oxide layer is disposed between first and second semiconductor layers and MEMS resonator is formed within a cavity in the first semiconductor layer. A first electrically conductive feature functionally coupled to the MEMS resonator is exposed at a surface of the first semiconductor layer, and an insulating region is exposed at the surface of the first semiconductor layer adjacent the first electrically conductive feature. A semiconductor cover layer is bonded to the surface of the first semiconductor layer to hermetically seal the MEMS resonator within the cavity. A second electrically conductive feature extends through the semiconductor cover layer to contact the first electrically conductive feature, and an isolation trench extends through the semiconductor cover layer to the insulating region to electrically isolate a conductive path formed by the first and second electrically conductive features.

    Low-profile stacked-die MEMS resonator system

    公开(公告)号:US10287162B2

    公开(公告)日:2019-05-14

    申请号:US15805031

    申请日:2017-11-06

    Abstract: A low-profile packaging structure for a microelectromechanical-system (MEMS) resonator system includes an electrical lead having internal and external electrical contact surfaces at respective first and second heights within a cross-sectional profile of the packaging structure and a die-mounting surface at an intermediate height between the first and second heights. A resonator-control chip is mounted to the die-mounting surface of the electrical lead such that at least a portion of the resonator-control chip is disposed between the first and second heights and wire-bonded to the internal electrical contact surface of the electrical lead. A MEMS resonator chip is mounted to the resonator-control chip in a stacked die configuration and the MEMS resonator chip, resonator-control chip and internal electrical contact and die-mounting surfaces of the electrical lead are enclosed within a package enclosure that exposes the external electrical contact surface of the electrical lead at an external surface of the packaging structure.

Patent Agency Ranking