公开(公告)号：EP4330996A2

公开(公告)日：2024-03-06

申请号：EP22725493.5

申请日：2022-04-26

Applicant: THALES

Inventor： EUSTACHE, Etienne ,  MARTINS, José Paolo ,  LE BAILLIF, Matthieu ,  BANSROPUN, Shailendra ,  ZIAEI, Afshin

IPC: H01G5/18 ,  H01G5/16

公开(公告)号：EP2875549B1

公开(公告)日：2020-05-06

申请号：EP13740000.8

申请日：2013-07-23

Applicant: THALES

Inventor： ZIAEI, Afshin ,  LE BAILLIF, Matthieu ,  BANSROPUN, Shailendra ,  MARTINS, Paolo

IPC: H01P1/387 ,  H01P3/00 ,  H01P3/08 ,  H01G4/33 ,  H01L51/00 ,  H01H1/00

公开(公告)号：EP4427296A1

公开(公告)日：2024-09-11

申请号：EP22812645.4

申请日：2022-11-04

Applicant: THALES ,  Centre National de la Recherche Scientifique ,  Université de Bretagne Occidentale (U.B.O.)

Inventor： LE BORGNE, Fabien ,  THEPAUT, Loïc ,  SIMON, Hervé ,  ZIAEI, Afshin ,  LE BAILLIF, Matthieu ,  MARTINS, José Paolo ,  POTELON, Benjamin ,  QUENDO, Cédric

IPC: H01P1/203

CPC classification number: H01P1/2039

公开(公告)号：EP2875549A2

公开(公告)日：2015-05-27

申请号：EP13740000.8

申请日：2013-07-23

Applicant: THALES

Inventor： ZIAEI, Afshin ,  LE BAILLIF, Matthieu ,  BANSROPUN, Shailendra ,  MARTINS, Paolo

IPC: H01P1/387 ,  H01P3/00 ,  H01P3/08 ,  H01G4/33 ,  H01L51/00 ,  H01H1/00

Abstract: The invention concerns passive radio-frequency microelectronic components for integrated circuits, comprising a dielectric substrate (S) and at least one metal conductive layer disposed on said substrate, said conductive layer comprising at least a first metal conductive part (C1) and a second metal conductive part (C2) separated by insulation (I). A microelectronic component according to the invention comprises at least one graphene layer (G) disposed so that a radio-frequency or hyper-frequency signal passes through said at least one graphene layer (G) when it is transmitted between said first metal conductive part and said second metal conductive part, said graphene layer (G) being capable, when it is subjected to an electrical potential, of transmitting said radio-frequency or hyper-frequency signal in a first direction, and of attenuating said radio-frequency or hyper-frequency signal in a second direction opposite said first direction. The invention applies in particular to transmission-line, capacitor and microswitch microelectronic components.

Abstract translation: 一种用于集成电路的无源射频微电子部件，其包括电介质基板和位于所述基板上的至少一个金属导电层。 所述导电层包括由绝缘体隔开的至少一个第一金属导电部分和第二金属导电部分。 根据本发明的微电子部件包括至少一个石墨烯层，其被定位成使得当射频或超频信号在所述第一金属导电部分和所述第二金属导电部分之间传输时，射频或超频信号与所述至少一个石墨烯层交叉，所述石墨烯层能够 当其经受电位时，沿着第一方向发送所述射频或超频信号，并沿着与所述第一方向相反的第二方向衰减所述射频或超频信号。

公开(公告)号：EP2689490A1

公开(公告)日：2014-01-29

申请号：EP12709631.1

申请日：2012-03-19

Applicant: Thales

Inventor： ZIAEI, Afshin ,  LE BAILLIF, Matthieu ,  XAVIER, Stéphane

IPC: H01P3/00 ,  B82Y30/00 ,  H01P1/10

CPC classification number: H01P1/10 ,  B82Y10/00 ,  B82Y30/00 ,  H01H1/0094 ,  H01H2300/036 ,  H01P1/127 ,  H01P3/003

Abstract: The subject of the invention is an RF component, comprising at least one coplanar RF stripline (Ls), with a metal area (M1, M2) on the surface of a substrate (S), and a nanoswitching structure located between said coplanar stripline and the metal area, the RF stripline and the metal area lying parallel to each other along a first direction, and the RF stripline and the metal area comprising lateral elements (Lsb1, Lsb2, Mb11, Mb12, Mb21, Mb22) lying perpendicular to said first direction, characterized in that: one lateral element (Lsb1, Lsb2) of the RF stripline interacts with at least one lateral metal-area element (Mb11, Mb12, Mb21, Mb22), which comprises a series of nanotubes or nanowires (Nb11i, Nb12i), via a switching action that brings the series of nanotubes or nanowires into direct contact with the lateral element of said RF stripline; and, said nanoswitching structure furthermore comprises at least one switching electrode on the surface of said substrate, making it possible for said series of nanotubes or nanowires to be brought into contact with said lateral element of said RF stripline.

公开(公告)号：EP2566807A1

公开(公告)日：2013-03-13

申请号：EP10718178.6

申请日：2010-05-07

Applicant: THALES

Inventor： ZIAEI, Afshin ,  LE BAILLIF, Matthieu

IPC: B81C1/00

CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81C2203/0735 ,  H01H59/0009

Abstract: The invention relates to the general field of methods for producing electronic modules including electronic power components (3) made on a gallium nitride (GaN) substrate (1), as well as electrostatically activated MEMS (Micro Electro-Mechanical System) microswitches (10). The electronic components and the microswitches according to the invention are produced on a single gallium nitride substrate and the production method comprises at least the following steps: Step 1: Making power components (3) on the gallium nitride substrate; Step 2: Depositing a first common passivation layer (4) on said components and on the substrate; and Step 3: Making microswitches (10) on said substrate.

Abstract translation: 电子模块的制造方法一方面包括制造在由氮化镓（GaN）制成的衬底上的功率电子部件，另一方面，使用使用MEMS（微机电系统）型的静电激活的微型开关 。 电子元件和微型开关在单个氮化镓衬底上制造，并且制造方法至少包括以下步骤：在氮化镓衬底上制造功率元件; 在所述组件和衬底上沉积第一公共钝化层; 所述基板上的微型开关的制造。