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公开(公告)号：US11355704B2
公开(公告)日：2022-06-07
申请号：US17037039
申请日：2020-09-29
Applicant: Tsinghua University
Inventor： Huaqiang Wu , Wei Wu , Bin Gao , He Qian
IPC: H01L45/00
Abstract: A resistive random access memory and a manufacture method thereof are provided. The resistive random access memory includes: a first electrode, a second electrode, a resistive layer between the first electrode and the second electrode, and at least one thermal enhanced layer; the thermal enhanced layer is adjacent to the resistive layer, and a thermal conductivity of the thermal enhanced layer is less than a thermal conductivity of the first electrode and a thermal conductivity of the second electrode.
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12.发明申请公开(公告)号：US20190088325A1
公开(公告)日：2019-03-21
申请号：US16132931
申请日：2018-09-17
Applicant: Tsinghua University
Inventor： Huaqiang Wu , Yachuan PANG , Bin Gao , He Qian
Abstract: A circuit structure for implementing a physical unclonable function and a driving method thereof, an integrated circuit chip and an authentication method thereof, an electronic device are disclosed. The circuit structure includes: a multilayer circuit, a first address circuit and an output circuit, the multilayer circuit includes a first RRAM device array which is addressable and a second RRAM device array which is addressable; the first address circuit is configured to map a resistance value of a second RRAM device in the second RRAM device array to a first address; the first address is used for positioning a selected first RRAM device; and the output circuit is configured to acquire and process a resistance value of the selected first RRAM device and output a processing result.
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公开(公告)号：US12283320B2
公开(公告)日：2025-04-22
申请号：US17788408
申请日：2021-12-14
Applicant: TSINGHUA UNIVERSITY
Inventor： Huaqiang Wu , Zhengwu Liu , Jianshi Tang , Bin Gao , He Qian
Abstract: A data processing method based on a memristor array and an electronic apparatus are disclosed. The data processing method based on a memristor array includes: acquiring a plurality of first analog signals; setting the memristor array, and writing data corresponding to a convolution parameter matrix of a convolution processing into the memristor array; inputting the plurality of first analog signals respectively into a plurality of column signal input terminals of the memristor array that has been set, controlling operation of the memristor array to perform the convolution processing on the plurality of first analog signals, and obtaining a plurality of second analog signals after performing the convolution processing at a plurality of row signal output terminals of the memristor array, respectively.
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公开(公告)号：US20250069772A1
公开(公告)日：2025-02-27
申请号：US18945373
申请日：2024-11-12
Inventor： Jianshi Tang , Zhenxuan Zhao , Yuan Dai , Wangwei Lee , Zhengyou Zhang , Jian Yuan , Huaqiang Wu , He Qian , Bin Gao
Abstract: This application discloses a conductive paste, a preparation method thereof. The conductive paste comprises: a thermoplastic polyurethane, conductive particles, and an organic solvent, the thermoplastic polyurethane and the conductive particles being proportionally mixed in the organic solvent, and the thermoplastic polyurethane being dispersed in the form of particles among the conductive particles. A thermoplastic polyurethane elastomer is used as a binder, and the conductive particles are mixed in the organic solvent containing the thermoplastic polyurethane elastomer. The conductive particles ensure the conductivity of the conductive film prepared using the conductive paste. The thermoplastic polyurethane has strong adhesion ability, and is suitable for use on the surface of most substrates, to form a conductive film with good adhesion and no cracking.
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公开(公告)号：US12217164B2
公开(公告)日：2025-02-04
申请号：US16964435
申请日：2018-02-24
Applicant: Tsinghua University
Inventor： Xinyi Li , Huaqiang Wu , He Qian , Bin Gao , Sen Song , Qingtian Zhang
Abstract: A neural network and its information processing method, information processing system. The neural network includes N layers of neuron layers connected to each other one by one, except for a first layer of neuron layer, each of the neurons of the other neuron layers includes m dendritic units and one hippocampal unit; the dendritic unit includes a resistance value graded device, the hippocampal unit includes a resistance value mutation device, and the m dendritic units can be provided with different threshold voltage or current, respectively; and the neurons on the nth layer neuron layer are connected to the m dendritic units of the neurons on the n+1th layer neuron layer; wherein N is an integer larger than 3, m is an integer larger than 1, n is an integer larger than 1 and less than N.
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Patent Agency Ranking
公开(公告)号：US12170155B2
公开(公告)日：2024-12-17
申请号：US17747906
申请日：2022-05-18
Inventor： Jianshi Tang , Zhenxuan Zhao , Yuan Dai , Wangwei Lee , Zhengyou Zhang , Jian Yuan , Huaqiang Wu , He Qian , Bin Gao
Abstract: This application discloses a conductive paste, a preparation method thereof, and a preparation method of a conductive film using the conductive paste. The conductive paste comprises: a thermoplastic polyurethane, conductive particles, and an organic solvent, the thermoplastic polyurethane and the conductive particles being proportionally mixed in the organic solvent, and the thermoplastic polyurethane being dispersed in the form of particles among the conductive particles. A thermoplastic polyurethane elastomer is used as a binder, and the conductive particles are mixed in the organic solvent containing the thermoplastic polyurethane elastomer. The conductive particles ensure the conductivity of the conductive film prepared using the conductive paste. The thermoplastic polyurethane has strong adhesion ability, and is suitable for use on the surface of most substrates, to form a conductive film with good adhesion and no cracking.
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公开(公告)号：US12100448B2
公开(公告)日：2024-09-24
申请号：US17530128
申请日：2021-11-18
Applicant: Huawei Technologies Co., Ltd. , TSINGHUA UNIVERSITY
Inventor： Bin Gao , Kanwen Wang , Junren Chen , Rui Zhang , Huaqiang Wu
CPC classification number: G11C13/0069 , G06N3/065 , G11C2013/0078 , G11C2213/15
Abstract: A storage device may be used in a neural network. The storage device includes a memristor unit, a current-controlled circuit, and a write circuit. The memristor unit has a structure of one-transistor and one-resistive random access memory (1T1R). The current-controlled circuit is configured to limit a current passing through the memristor unit to a target current, where the target current is determined based on target conductance of the memristor unit and a gate voltage of the transistor, and the target conductance is used to indicate target data to be written into the memristor unit. The write circuit is configured to load a write voltage to the memristor unit in cooperation with the current-controlled circuit, to write the target data to the memristor unit.
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公开(公告)号：US12079708B2
公开(公告)日：2024-09-03
申请号：US17049348
申请日：2020-01-10
Applicant: TSINGHUA UNIVERSITY
Inventor： Huaqiang Wu , Peng Yao , Bin Gao , He Qian
CPC classification number: G06N3/063 , G06F9/30036 , G06F9/345 , G06F9/3877
Abstract: Disclosed are a parallel acceleration method for a memristor-based neural network, a parallel acceleration processor based on a memristor-based neural network and a parallel acceleration device based on a memristor-based neural network. The neural network includes a plurality of functional layers sequentially provided, wherein the plurality of functional layers include a first functional layer and a second functional layer following the first functional layer, the first functional layer includes a plurality of first memristor arrays in parallel, and the plurality of first memristor arrays are configured to execute an operation of the first functional layer in parallel and to output a result of the operation to the second functional layer. The parallel acceleration method includes: executing the operation of the first functional layer in parallel via the plurality of first memristor arrays and outputting the result of the operation to the second functional layer.
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公开(公告)号：US11803360B2
公开(公告)日：2023-10-31
申请号：US17517096
申请日：2021-11-02
Applicant: TSINGHUA UNIVERSITY
Inventor： Huaqiang Wu , Ruihua Yu , Yilong Guo , Jianshi Tang , Bin Gao , He Qian
Abstract: A compilation method, a compilation apparatus suitable for an In-Memory Computing apparatus, a computing device and a storage medium. The compilation method includes: acquiring calculation information of an algorithm to be compiled; converting the algorithm to be compiled into the first intermediate representation according to the calculation information; mapping the first intermediate representation to the second intermediate representation; and compiling the algorithm to be compiled into instruction information recognized by the In-Memory Computing apparatus according to the hardware information, to make the In-Memory Computing apparatus execute the instruction information. The compilation method may compile the calculation information into instructions that may be directly executed by the In-Memory Computing apparatus, so as to realize the effect of accelerating the operations of various algorithms by using the In-Memory Computing apparatus.
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公开(公告)号：US11574199B2
公开(公告)日：2023-02-07
申请号：US16699727
申请日：2019-12-01
Applicant: Tsinghua University
Inventor： Huaqiang Wu , Bin Gao , Yudeng Lin , He Qian
Abstract: A generative adversarial network device and a training method thereof. The generative adversarial network device includes a generator and a discriminator. The generator is configured to generate a first sample according to an input data; the discriminator is coupled to the generator, and is configured to receive the first sample and be trained based on the first sample; the generator includes a first memristor array serving as a first weight array. The generative adversarial network device can omit a process of adding noise to fake samples generated by the generator, thereby saving training time, reducing resource consumption and improving training speed of the generative adversarial network.
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