公开(公告)号：US09396900B2

公开(公告)日：2016-07-19

申请号：US13676265

申请日：2012-11-14

Applicant: Tokyo Electron Limited

Inventor： Barton Lane ,  Lee Chen ,  Peter L. G. Ventzek ,  Merritt Funk ,  Jianping Zhao ,  Radha Sundararajan

IPC: H01J7/24 ,  H05B31/26 ,  H01J1/00 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01J1/00 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174 ,  H05H1/46 ,  H05H2001/4652 ,  H05H2001/4675

Abstract: A radio frequency (RF) power coupling system is provided. The system has an RF electrode configured to couple RF power to plasma in a plasma processing system, multiple power coupling elements configured to electrically couple RF power at multiple power coupling locations on the RF electrode, and an RF power system coupled to the multiple power coupling elements, and configured to couple an RF power signal to each of the multiple power coupling elements. The multiple power coupling elements include a center element located at the center of the RF electrode and peripheral elements located off-center from the center of the RF electrode. A first peripheral RF power signal differs from a second peripheral RF power signal in phase.

Abstract translation: 提供射频（RF）功率耦合系统。 该系统具有被配置为在等离子体处理系统中将RF功率耦合到等离子体的RF电极，多个功率耦合元件被配置为在RF电极上的多个功率耦合位置处电耦合RF功率，以及耦合到多功率耦合的RF功率系统 元件，并且被配置为将RF功率信号耦合到多个功率耦合元件中的每一个。 多个功率耦合元件包括位于RF电极中心的中心元件和位于RF电极中心偏离中心的外围元件。 第一外围RF功率信号与第二外围RF功率信号同相不同。

公开(公告)号：US20140113454A1

公开(公告)日：2014-04-24

申请号：US14054902

申请日：2013-10-16

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Jianping Zhao ,  Merritt Funk ,  Zhiying Chen

IPC: H01L21/3065 ,  H01L21/683

CPC classification number: H01L21/3065 ,  H01J37/32422 ,  H01J37/3266 ,  H01L21/683

Abstract: A plasma processing apparatus includes a processing chamber having a plasma processing space therein and a substrate support in the processing chamber at a first end for supporting a substrate. A plasma source is coupled into the processing space and configured to form a plasma at a second end of the processing chamber opposite said first end. The apparatus further includes a magnetic grid having an intensity of a magnetic flux therein, a plurality of passageways penetrating from a first side to a second side, a thickness, a transparency, a passageway aspect ratio, and a position within the processing chamber between the second end and the substrate. The intensity, the thickness, the transparency, the passageway aspect ratio, and the position are configured to cause electrons having energies above an acceptable maximum level to divert from the direction. A method of obtaining low average electron energy flux onto the substrate is also provided.

Abstract translation: 等离子体处理装置包括其中具有等离子体处理空间的处理室和用于支撑基板的第一端处于处理室中的基板支撑件。 等离子体源耦合到处理空间中并且被配置为在与第一端相对的处理室的第二端处形成等离子体。 该装置还包括具有其中的磁通强度的磁栅格，从第一侧穿透到第二侧的多个通道，厚度，透明度，通道纵横比以及处理室内的位置 第二端和衬底。 强度，厚度，透明度，通道长宽比和位置被配置为使能量高于可接受的最大电平的电子从该方向转移。 还提供了一种在基板上获得低平均电子能量通量的方法。

公开(公告)号：US20130270997A1

公开(公告)日：2013-10-17

申请号：US13829959

申请日：2013-03-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

IPC: H05H1/46 ,  H01F41/06 ,  C23F1/00

CPC classification number: H05H1/46 ,  C23F1/00 ,  H01F41/06 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/3065 ,  Y10T29/49016

Abstract: A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.

Abstract translation: 表面波等离子体（SWP）源通过例如径向线缝隙天线将微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 ICP源设置在SWP源和衬底之间，并以低功率通电，对于300mm晶片，例如在约25瓦特，小于100瓦特。 ICP源通过外围电偶极线圈耦合能量以减少电容耦合。

公开(公告)号：US20130264938A1

公开(公告)日：2013-10-10

申请号：US13830090

申请日：2013-03-14

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Jianping Zhao ,  Ronald V. Bravenec ,  Merritt Funk

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/67005 ,  H01Q13/10

Abstract: A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having at least one slot. The SWP source further comprises a first recess configuration and a second recess configuration formed in the plasma surface, wherein at least one first recess of the first recess configuration differs in size and/or shape from at least one second recess of the second recess configurations. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.

Abstract translation: 描述了表面波等离子体（SWP）源。 SWP源包括电磁（EM）波发射器，其被配置为通过在邻近等离子体的EM波发射器的等离子体表面上产生表面波来将期望的EM波模式中的EM能量耦合到等离子体。 EM波发射器包括具有至少一个时隙的缝隙天线。 SWP源还包括形成在等离子体表面中的第一凹陷构型和第二凹陷构型，其中第一凹槽构型的至少一个第一凹槽的尺寸和/或形状与第二凹部构型的至少一个第二凹部不同。 功率耦合系统耦合到EM波发射器并且被配置为向用于形成等离子体的EM波发射器提供EM能量。

公开(公告)号：US20250095983A1

公开(公告)日：2025-03-20

申请号：US18965507

申请日：2024-12-02

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Peter Lowell George Ventzek ,  Toshihiko Iwao

IPC: H01L21/02 ,  C23C16/34

Abstract: A film growth apparatus (e.g., a nitridation apparatus) includes a processing chamber, a substrate holder disposed in the processing chamber, an energy source coupled to the processing chamber, and one or more gas inlets fluidically coupled to the processing chamber. The substrate holder is configured to support a substrate (e.g., a silicon substrate) maintained at a temperature less than about 400° C. The energy source is configured to treat an unreactive surface of the substrate in the processing chamber to convert the unreactive surface to a reactive surface by exposing the unreactive surface to an energy flux. The one or more gas inlets are configured to convert (e.g., nitridate) the reactive surface using a gas (e.g., nitrogen-based gas) without generating plasma by converting the reactive surface to a film (e.g., a nitride layer) comprising a subsequent unreactive surface.

公开(公告)号：US20240170256A1

公开(公告)日：2024-05-23

申请号：US17992432

申请日：2022-11-22

Applicant: Tokyo Electron Limited

Inventor： John Carroll ,  Jianping Zhao

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J2237/336

Abstract: According to an embodiment, an apparatus for a plasma processing system is provided. The apparatus includes a conductive conical frustum having an open top base, an open bottom base, and a surface area coupling the open top base to the open bottom base. A conductive cylinder is positioned within the conductive conical frustum with a closed bottom base and an open top base. The open top base of the conductive cylinder is connected to sidewalls of the open top base of the conductive conical frustum. The conductive cylinder has a height shorter than the height of the conductive conical frustum. The apparatus is configured to provide a broadband RF transition from a matching network to a resonating structure of the plasma processing system for frequencies ranging between 13 megahertz (MHz) and 220 MHz.

公开(公告)号：US20230386789A1

公开(公告)日：2023-11-30

申请号：US17804496

申请日：2022-05-27

Applicant: Tokyo Electron Limited

Inventor： Charles Schlechte ,  Jianping Zhao ,  John Carroll ,  Peter Lowell George Ventzek

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/3299 ,  H01J37/32926 ,  H01J2237/24564 ,  H01J2237/332 ,  H01J2237/334

Abstract: A method of performing a plasma process includes generating, at an output of a signal generator, a first RF signal at a first frequency. The signal generator is coupled to a plasma chamber through a matching circuit. Based on a feedback from the first RF signal, variable components of the matching circuit are moved to fixed positions. A second RF signal is generated at a second frequency at the output of the signal generator to ignite a plasma within the plasma chamber. In response to detecting the plasma, the signal generator switches to output a third RF signal at the first frequency to sustain the plasma, which is configured to process a substrate loaded into the plasma chamber while holding the matching circuit at the fixed positions.

公开(公告)号：US20230143204A1

公开(公告)日：2023-05-11

申请号：US17521359

申请日：2021-11-08

Applicant: Tokyo Electron Limited

Inventor： Toshihiko Iwao ,  Jianping Zhao

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/02

CPC classification number: H01J37/32449 ,  H01J37/3299 ,  H01J37/32146 ,  H01L22/26 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01J2237/3321

Abstract: A method of plasma processing that includes: flowing a first gas and a second gas into a plasma processing chamber including a substrate, the second gas including a film precursor; at a first time instance, while maintaining the flow of the first gas, shutting off the flow of the second gas into the plasma processing chamber; and at a second time instance after the first time instance, powering an electrode of the plasma processing chamber to generate a plasma within the plasma processing chamber, the surface of the substrate being exposed to the generated plasma to form a film over the substrate.

公开(公告)号：US11295937B2

公开(公告)日：2022-04-05

申请号：US16717024

申请日：2019-12-17

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Peter Ventzek

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/311

Abstract: A method of operating a plasma processing system includes determining a first frequency to power a first plasma within a plasma processing chamber. The method includes generating a first amplified RF signal having the first frequency at a broadband power amplifier. The method includes supplying the first amplified RF signal to process a substrate disposed in the plasma processing chamber using a first plasma process including the first plasma. The method includes determining a second frequency to power a second plasma within the plasma processing chamber. The method includes generating a second amplified RF signal having the second frequency at the broadband power amplifier. The method includes supplying the second amplified RF signal to process the substrate disposed in the plasma processing chamber using a second plasma process including the second plasma.

公开(公告)号：US11170981B2

公开(公告)日：2021-11-09

申请号：US16572708

申请日：2019-09-17

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Peter Ventzek

IPC: H01L21/66 ,  H01J37/32

Abstract: An exemplary plasma processing system includes a plasma processing chamber, an electrode for powering plasma in the plasma processing chamber, a tunable radio frequency (RF) signal generator configured to output a first signal at a first frequency and a second signal at a second frequency. The second frequency is at least 1.1 times the first frequency. The system includes a broadband power amplifier coupled to the tunable RF signal generator, the first frequency and the second frequency being within an operating frequency range of the broadband power amplifier. The output of the broadband power amplifier is coupled to the electrode. The broadband power amplifier is configured to supply, at the output, first power at the first frequency and second power at the second frequency.