公开(公告)号：GB2320128B

公开(公告)日：2001-11-14

申请号：GB9625144

申请日：1996-12-03

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHI-CHUNG ,  CHEN TSAI-FU

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/334 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/321

公开(公告)号：SG60028A1

公开(公告)日：1999-02-22

申请号：SG1996011582

申请日：1996-12-09

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHI-CHUNG ,  CHEN TSAI-FU

IPC: H01L21/321 ,  H01L21/4757

公开(公告)号：NL1004839A1

公开(公告)日：1998-06-22

申请号：NL1004839

申请日：1996-12-19

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHI-CHUNG ,  CHEN TSAI-FU

IPC: C23C16/02 ,  C23C16/56 ,  H01G4/33 ,  C23C16/40 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/3105 ,  H01L29/94

Abstract: A process for fabricating electrodes for the capacitor dielectric of semiconductor memory devices with low leakage current characteristics is disclosed. The process comprises the steps of first depositing a titanium oxide film over a semiconductor silicon substrate. The deposited titanium oxide film is then annealed. A layer of tungsten nitride top electrode is then deposited on the annealed titanium oxide film. A second annealing procedure is then conducted to simulate post electrode high temperature process.