公开(公告)号：JPH10200074A

公开(公告)日：1998-07-31

申请号：JP6837897

申请日：1997-03-21

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHI-CHUNG ,  CHEN TSAI-FU

IPC: C23C16/40 ,  C23C16/02 ,  C23C16/56 ,  H01G4/33 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To manufacture, in a low pressure environment, a capacitor dielectric body of a semiconductor memory device which has less leakage current. SOLUTION: First a semiconductor silicon substrate 10 having an electrode layer 11 made of NH3 -polysilicon nitride is made. Next, a tantalum oxide (Ta2 O5 ) film 12 is deposited all over the electrode layer 11. Then, the deposited tantalum oxide film is annealed at 800 deg.C for 30 minutes in a nitrogen gas (N2 O) atmosphere. By this post-deposition annealing method, a very reliable tantalum oxide film having less leakage current for a semiconductor memory device can be manufactured.

公开(公告)号：NL1004841A1

公开(公告)日：1998-06-22

申请号：NL1004841

申请日：1996-12-19

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHI-CHUNG ,  CHIU HIEN-TIEN ,  TSAI MING-HSING

IPC: C23C16/04 ,  C23C16/20 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  C23C16/06

公开(公告)号：GB2320129B

公开(公告)日：2001-09-26

申请号：GB9625172

申请日：1996-12-04

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHI-CHUNG ,  CHIU HIEN-TIEN ,  TSAI MING-HSING

IPC: C23C16/04 ,  C23C16/20 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768

公开(公告)号：SG63970A1

公开(公告)日：1999-03-30

申请号：SG1997002961

申请日：1997-08-16

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHI-CHUNG ,  CHEN TSAI-FU

IPC: H01L23/58

公开(公告)号：GB2320129A

公开(公告)日：1998-06-10

申请号：GB9625172

申请日：1996-12-04

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHI-CHUNG ,  CHIU HIEN-TIEN ,  TSAI MING-HSING

IPC: C23C16/04 ,  C23C16/20 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768

Abstract: An improved method of fabricating an aluminum plug using a selective chemical vapor deposition (CVD) procedure. A semiconductor component is first formed in a substrate having an insulating layer formed over the surface thereof. The insulating layer has a contact opening formed therein that exposes a conductive region of the semiconductor component. Then, a vacuum thermal annealing treatment is performed on the device substrate. Dimethylethylamine alane (DMEAA) is used as a precursor for then depositing an aluminum layer over the surface of the substrate, using a CVD procedure performed at a substrate temperature not exceeding 250 ‹C, for fabricating an aluminum plug in the contact opening. The aluminum plug is selectively deposited over the surface of the exposed conductive region, while relatively not deposited over the surface of the insulating layer.

公开(公告)号：GB2320128A

公开(公告)日：1998-06-10

申请号：GB9625144

申请日：1996-12-03

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHI-CHUNG ,  CHEN TSAI-FU

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/334 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/321

Abstract: In a process for fabricating electrodes for capacitor devices of semiconductor memory having low leakage, a titanium oxide film is deposited over a silicon substrate and the oxide annealed, a layer of top electrode is deposited over the annealed film and annealed. The electrode may be W, Mo or a nitride of W, Ta or Ti. The substrate may be n + silicon or polysilicon, the first annealing step conducted in dry O 2 at 800‹C, and the second in N 2 at 400-800‹C.

公开(公告)号：DE19702388C2

公开(公告)日：2001-12-13

申请号：DE19702388

申请日：1997-01-23

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHI-CHUNG ,  CHIU HIEN-TIEN ,  TSAI MING-HSING

IPC: C23C16/04 ,  C23C16/20 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/203 ,  H01L21/283

公开(公告)号：NL1004839C2

公开(公告)日：1999-03-12

申请号：NL1004839

申请日：1996-12-19

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHI-CHUNG ,  CHEN TSAI-FU

IPC: C23C16/02 ,  C23C16/56 ,  C23C16/40 ,  H01G4/33 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/3105 ,  H01L29/94

Abstract: A process for fabricating electrodes for the capacitor dielectric of semiconductor memory devices with low leakage current characteristics is disclosed. The process comprises the steps of first depositing a titanium oxide film over a semiconductor silicon substrate. The deposited titanium oxide film is then annealed. A layer of tungsten nitride top electrode is then deposited on the annealed titanium oxide film. A second annealing procedure is then conducted to simulate post electrode high temperature process.

公开(公告)号：DE19651759A1

公开(公告)日：1997-10-16

申请号：DE19651759

申请日：1996-12-12

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHI-CHUNG ,  CHEN TSAI-FU

IPC: C23C16/40 ,  C23C16/02 ,  C23C16/56 ,  H01G4/33 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/324 ,  H01G4/10

Abstract: Producing low-leakage-current thin film with low-pressure chemical gas deposited Ta2O5 includes: (1) preparing a silicon substrate with one electrode layer; (2) depositing a thin film of Ta2O5 on the electrode layer; (3) annealing the Ta2O5 thin film in the NO2 gas.

公开(公告)号：DE19651106A1

公开(公告)日：1997-10-16

申请号：DE19651106

申请日：1996-12-09

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHI-CHUNG ,  CHEN TSAI-FU

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/334 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01G4/008 ,  H01L21/324

Abstract: In a process for fabricating electrodes for capacitor devices of semiconductor memory having low leakage, a titanium oxide film is deposited over a silicon substrate and the oxide annealed, a layer of top electrode is deposited over the annealed film and annealed. The electrode may be W, Mo or a nitride of W, Ta or Ti. The substrate may be n + silicon or polysilicon, the first annealing step conducted in dry O 2 at 800{C, and the second in N 2 at 400-800{C.