公开(公告)号：JPH10200074A

公开(公告)日：1998-07-31

申请号：JP6837897

申请日：1997-03-21

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHI-CHUNG ,  CHEN TSAI-FU

IPC: C23C16/40 ,  C23C16/02 ,  C23C16/56 ,  H01G4/33 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To manufacture, in a low pressure environment, a capacitor dielectric body of a semiconductor memory device which has less leakage current. SOLUTION: First a semiconductor silicon substrate 10 having an electrode layer 11 made of NH3 -polysilicon nitride is made. Next, a tantalum oxide (Ta2 O5 ) film 12 is deposited all over the electrode layer 11. Then, the deposited tantalum oxide film is annealed at 800 deg.C for 30 minutes in a nitrogen gas (N2 O) atmosphere. By this post-deposition annealing method, a very reliable tantalum oxide film having less leakage current for a semiconductor memory device can be manufactured.

公开(公告)号：JPH1187623A

公开(公告)日：1999-03-30

申请号：JP24082897

申请日：1997-09-05

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SON KISHU ,  CHEN TSAI-FU

IPC: H01G4/12 ,  H01L21/822 ,  H01L27/04

Abstract: PROBLEM TO BE SOLVED: To provide a dielectric film which being higher in dielectric coefficient, has a higher magnitude in capacity, a tolerable leakage current, and a low breakdown voltage. SOLUTION: A phosphorus-doped polysilicon bottom part electrode is rapidly thermally nitrided in ammonia at 900 deg.C for about 60 seconds. A first tantalum pentoxide layer A is formed on a polysilicon bottom part electrode which is phosphorus-doped by low-pressure chemical vapor deposition from a mixture of penta-ethoxyl tantalum and oxygen gas. A titanium oxide layer I is formed at the first tantalum pentoxide layer by low-pressure chemical vapor deposition from the mixture of tetra-isopropyl-titanate and the oxygen gas. A second tantalum pentoxide layer is formed on the titanium oxide layer. After a composite dielectric film has been coated, rapid thermal dinitrogen monoxide annealing is performed at 800 deg.C for about 60 seconds. A top electrode of titanium nitride and aluminum is formed through reactive sputtering.

公开(公告)号：SG67414A1

公开(公告)日：1999-09-21

申请号：SG1997003007

申请日：1997-08-20

Applicant: UNITED MICROELECTRONICS CORP

Inventor： HAN CHARLIE ,  CHEN TSAI-FU

IPC: H01L21/56 ,  H01L23/28 ,  H01L23/31 ,  H01L25/065 ,  H05K3/30

公开(公告)号：SG63970A1

公开(公告)日：1999-03-30

申请号：SG1997002961

申请日：1997-08-16

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHI-CHUNG ,  CHEN TSAI-FU

IPC: H01L23/58

公开(公告)号：GB2320128A

公开(公告)日：1998-06-10

申请号：GB9625144

申请日：1996-12-03

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHI-CHUNG ,  CHEN TSAI-FU

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/334 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/321

Abstract: In a process for fabricating electrodes for capacitor devices of semiconductor memory having low leakage, a titanium oxide film is deposited over a silicon substrate and the oxide annealed, a layer of top electrode is deposited over the annealed film and annealed. The electrode may be W, Mo or a nitride of W, Ta or Ti. The substrate may be n + silicon or polysilicon, the first annealing step conducted in dry O 2 at 800‹C, and the second in N 2 at 400-800‹C.

公开(公告)号：NL1004840C2

公开(公告)日：1998-06-22

申请号：NL1004840

申请日：1996-12-19

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHI-CHUNG ,  CHEN TSAI-FU

IPC: H01L21/02 ,  H01L21/334 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/8239

Abstract: Mfg. low-leakage current electrode for LPCVD TiO film comprises: (i) preparing a semiconductor Si base; (ii) depositing TiO thin film on Si base; (iii) annealing TiO film; (iv) depositing top electrode layer on TiO film; and (v) performing 2nd anneal.

公开(公告)号：GB2320131A

公开(公告)日：1998-06-10

申请号：GB9625205

申请日：1996-12-04

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHI-CHUNG ,  CHEN TSAI-FU

IPC: C23C16/02 ,  C23C16/56 ,  H01G4/33 ,  C23C16/40 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/8242 ,  H01L27/108 ,  H01G4/10

Abstract: A process for fabricating Ta 2 O 5 films for capacitor dielectrics of semiconductor memory devices such as stacked DRAM having low leakage current characteristics comprises the steps of first preparing a semiconductor silicon substrate carrying e.g. an NH3-nitrided polysilicon electrode layer. A Ta 2 O 5 film is then deposited over the surface of the electrode layer. The deposited Ta 2 O 5 film is then annealed in a furnace in N 2 O gas at a temperature of about 800 {C for about 30 minutes. This post-deposition annealing procedure yields Ta 2 O 5 film for semiconductor memory device capacitor dielectrics having low leakage current, good reliability, and is particularly suitable for batch processing in conventional oxidation furnaces.

公开(公告)号：NL1004839C2

公开(公告)日：1999-03-12

申请号：NL1004839

申请日：1996-12-19

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHI-CHUNG ,  CHEN TSAI-FU

IPC: C23C16/02 ,  C23C16/56 ,  C23C16/40 ,  H01G4/33 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/3105 ,  H01L29/94

Abstract: A process for fabricating electrodes for the capacitor dielectric of semiconductor memory devices with low leakage current characteristics is disclosed. The process comprises the steps of first depositing a titanium oxide film over a semiconductor silicon substrate. The deposited titanium oxide film is then annealed. A layer of tungsten nitride top electrode is then deposited on the annealed titanium oxide film. A second annealing procedure is then conducted to simulate post electrode high temperature process.

公开(公告)号：DE19651759A1

公开(公告)日：1997-10-16

申请号：DE19651759

申请日：1996-12-12

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHI-CHUNG ,  CHEN TSAI-FU

IPC: C23C16/40 ,  C23C16/02 ,  C23C16/56 ,  H01G4/33 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/324 ,  H01G4/10

Abstract: Producing low-leakage-current thin film with low-pressure chemical gas deposited Ta2O5 includes: (1) preparing a silicon substrate with one electrode layer; (2) depositing a thin film of Ta2O5 on the electrode layer; (3) annealing the Ta2O5 thin film in the NO2 gas.

公开(公告)号：DE19651106A1

公开(公告)日：1997-10-16

申请号：DE19651106

申请日：1996-12-09

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SUN SHI-CHUNG ,  CHEN TSAI-FU

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/334 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01G4/008 ,  H01L21/324

Abstract: In a process for fabricating electrodes for capacitor devices of semiconductor memory having low leakage, a titanium oxide film is deposited over a silicon substrate and the oxide annealed, a layer of top electrode is deposited over the annealed film and annealed. The electrode may be W, Mo or a nitride of W, Ta or Ti. The substrate may be n + silicon or polysilicon, the first annealing step conducted in dry O 2 at 800{C, and the second in N 2 at 400-800{C.