公开(公告)号：DE60205204D1

公开(公告)日：2005-09-01

申请号：DE60205204

申请日：2002-12-17

Applicant: UNITED TECHNOLOGIES CORP

Inventor： HOLOWCZAK JOHN E ,  EATON HARRY E

IPC: C04B41/85 ,  B32B18/00 ,  C04B41/50 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C23C4/10 ,  C23C26/00 ,  C23C28/00 ,  C23C28/04 ,  C23C30/00 ,  F01D5/28

Abstract: A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises an aluminosilicate of Group IIA and/or Group IIIB and a Group VB oxide. In one preferred embodiment, the barrier layer comprises 25 to 75 wt.% of the Group VB oxide (Ta, Nb and mixtures thereof) with the balance being barium-strontium aluminosilicate.

公开(公告)号：EP2938825A4

公开(公告)日：2016-01-20

申请号：EP13878483

申请日：2013-12-20

Applicant: UNITED TECHNOLOGIES CORP

Inventor： LUCAS JAMES L ,  KENNEDY MATTHEW B ,  HOLOWCZAK JOHN E ,  TREDWAY WILLIAM K

IPC: F01D5/02 ,  F01D5/06 ,  F01D5/28 ,  F01D5/34 ,  F01D25/28

CPC classification number: F01D5/025 ,  F01D5/066 ,  F01D5/284 ,  F01D5/34 ,  F05D2260/37 ,  F05D2300/175

公开(公告)号：EP3055509A4

公开(公告)日：2016-11-16

申请号：EP14852996

申请日：2014-09-17

Applicant: UNITED TECHNOLOGIES CORP

Inventor： HOLOWCZAK JOHN E ,  MCCAFFREY MICHAEL G

IPC: F01D5/28 ,  F01D5/30 ,  F01D11/00

CPC classification number: F01D5/282 ,  C04B35/00 ,  C04B2237/00 ,  F01D5/147 ,  F01D5/284 ,  F01D5/30 ,  F01D5/3007 ,  F01D5/3084 ,  F01D5/3092 ,  F01D11/008 ,  F05D2220/32 ,  F05D2240/80 ,  F05D2300/13 ,  F05D2300/2261 ,  F05D2300/2283 ,  F05D2300/6033 ,  F05D2300/606 ,  F05D2300/607