SYSTEMS AND METHODS FOR THE SYNTHESIS OF HIGH THERMOELECTRIC PERFORMANCE DOPED-SnTe MATERIALS
    11.
    发明申请
    SYSTEMS AND METHODS FOR THE SYNTHESIS OF HIGH THERMOELECTRIC PERFORMANCE DOPED-SnTe MATERIALS 有权
    合成高热电性能掺杂SnTe材料的系统与方法

    公开(公告)号:US20140366924A1

    公开(公告)日:2014-12-18

    申请号:US14307111

    申请日:2014-06-17

    CPC classification number: H01L35/16 H01L35/34

    Abstract: A thermoelectric composition comprising tin (Sn), tellurium (Te) and at least one dopant that comprises a peak dimensionless figure of merit (ZT) of 1.1 and a Seebeck coefficient of at least 50 μV/K and a method of manufacturing the thermoelectric composition. A plurality of components are disposed in a ball-milling vessel, wherein the plurality of components comprise tin (Sn), tellurium (Te), and at least one dopant such as indium (In). The components are subsequently mechanically and thermally processed, for example, by hot-pressing. In response to the mechanical-thermally processing, a thermoelectric composition is formed, wherein the thermoelectric composition comprises a dimensionless figure of merit (ZT) of the thermoelectric composition is at least 0.8, and wherein a Seebeck coefficient of the thermoelectric composition is at least 50 μV/K at any temperature.

    Abstract translation: 一种包含锡(Sn),碲(Te)和至少一种掺杂剂的热电组合物,其包含峰值无量纲品质因数(ZT)为1.1,塞贝克系数为至少50μV/ K,以及制造热电组合物的方法 。 多个部件设置在球磨容器中,其中多个部件包括锡(Sn),碲(Te)和至少一种掺杂剂如铟(In)。 随后机械和热处理组件,例如通过热压。 响应于机械热处理,形成热电组合物,其中热电组合物包含热电组合物的无量纲优点(ZT)至少为0.8,并且其中热电组成的塞贝克系数为至少50 μV/ K。

    Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices

    公开(公告)号:US10818832B2

    公开(公告)日:2020-10-27

    申请号:US15627593

    申请日:2017-06-20

    Abstract: Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 μΩ·cm2.

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