SUPERLEV VEHICLE SYSTEM FOR TRANSPORTING ENERGY, PEOPLE, AND GOODS

    公开(公告)号:US20230246569A1

    公开(公告)日:2023-08-03

    申请号:US18160803

    申请日:2023-01-27

    Inventor: Zhifeng Ren

    CPC classification number: H02N15/00 H01F6/04 H01B12/02

    Abstract: A superconductor levitation (superlev) vehicle system and method of transporting and storing coolant and fuel that includes a guideway comprising a conduit. The conduit includes a superconductor and a coolant coupled to the superconductor. The coolant is configured to cool the superconductor. A magnetic vehicle that is configured to be levitated a distance from the guideway via interaction between a magnetic field from the vehicle and a magnetic field from the superconductor. The superconductor may also be used to transport and store electrical power, and the conduit may be used to transport and store liquids and/or fuels.

    Gradient SiNO Anti-Reflective Layers in Solar Selective Coatings
    8.
    发明申请
    Gradient SiNO Anti-Reflective Layers in Solar Selective Coatings 有权
    太阳能选择性涂料中梯度SiNO防反射层

    公开(公告)号:US20150015960A1

    公开(公告)日:2015-01-15

    申请号:US14297716

    申请日:2014-06-06

    Abstract: A solar selective coating includes a substrate, a cermet layer having nanoparticles therein deposited on the substrate, and an anti-reflection layer deposited on the cermet layer. The cermet layer and the anti-reflection layer may each be formed of intermediate layers. A method for constructing a solar-selective coating is disclosed and includes preparing a substrate, depositing a cermet layer on the substrate, and depositing an anti-reflection layer on the cermet layer.

    Abstract translation: 太阳能选择性涂层包括基底,在基底上沉积有纳米颗粒的金属陶瓷层,以及沉积在金属陶瓷层上的抗反射层。 金属陶瓷层和抗反射层各自可以由中间层形成。 公开了一种构建太阳能选择性涂层的方法,包括制备衬底,在衬底上沉积金属陶瓷层,并在金属陶瓷层上沉积抗反射层。

    FABRICATION OF STABLE ELECTRODE/DIFFUSION BARRIER LAYERS FOR THERMOELECTRIC FILLED SKUTTERUDITE DEVICES
    9.
    发明申请
    FABRICATION OF STABLE ELECTRODE/DIFFUSION BARRIER LAYERS FOR THERMOELECTRIC FILLED SKUTTERUDITE DEVICES 有权
    稳定电极/扩散障碍层的制造用于热电填充的SKUTTERUDITE设备

    公开(公告)号:US20140377901A1

    公开(公告)日:2014-12-25

    申请号:US14310840

    申请日:2014-06-20

    CPC classification number: H01L35/34 H01L35/08 H01L35/14 H01L35/20 H01L35/22

    Abstract: Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 μΩ·cm2.

    Abstract translation: 公开了用于制造电触头的n型和p型填充方钴矿热电腿的方法。 将CoSi 2和掺杂剂的第一材料球磨以形成用n型方钴矿的第二粉末热机械加工的第一粉末,以形成设置在第一层和第三层之间的n型方钴矿层 掺杂CoSi2。 此外,将多种组分如铁和镍以及至少一种钴或铬球磨成形成第一粉末,其用p型方钴矿层热机械加工以形成p型方钴矿 层“第二层”设置在第一和第三层之间。 在热压之后的n型和p型方钴矿的第一层和方钴矿层之间的具体接触电阻小于约10.0μΩ·cmgr·cm 2。

    Metallic Nanomesh
    10.
    发明申请
    Metallic Nanomesh 有权
    金属纳米糖

    公开(公告)号:US20140377579A1

    公开(公告)日:2014-12-25

    申请号:US14298090

    申请日:2014-06-06

    Abstract: A transparent flexible nanomesh having at least one conductive element and sheet resistance less than 300Ω/□ when stretched to a strain of 200% in at least one direction. The nanomesh is formed by depositing a sacrificial film, depositing, etching, and oxidizing a first metal layer on the film, etching the sacrificial film, depositing a second metal layer, and removing the first metal layer to form a nanomesh on the substrate.

    Abstract translation: 当在至少一个方向上拉伸至200%的应变时,具有至少一种导电元件和薄层电阻小于300Ω的透明柔性纳米薄膜。 纳米片通过沉积牺牲膜,沉积,蚀刻和氧化膜上的第一金属层,蚀刻牺牲膜,沉积第二金属层,以及去除第一金属层以在基底上形成纳米粒子而形成。

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