公开(公告)号：US07179148B2

公开(公告)日：2007-02-20

申请号：US10963156

申请日：2004-10-12

Applicant: Sungho Jin ,  Victor Katsap ,  Warren K. Waskiewicz ,  Wei Zhu

Inventor： Sungho Jin ,  Victor Katsap ,  Warren K. Waskiewicz ,  Wei Zhu

IPC: H01J9/04

CPC classification number: H01J1/15 ,  H01J9/042 ,  H01J37/06 ,  H01J2237/3175

Abstract: A cathode with an improved work function, for use in a lithographic system, such as the SCALPEL™ system, which includes a buffer between a substrate and an emissive layer, where the buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth. The buffer layer may be a solid solution or a multiphase alloy. A method of making the cathode by depositing a buffer between a surface of the substrate and an emissive layer, where the deposited buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth.

Abstract translation: 具有改进的功函数的阴极，用于诸如SCALPEL TM系统的光刻系统，其包括衬底和发射层之间的缓冲器，其中缓冲区改变，随机化，小型化和/或隔离 晶粒表面的晶粒结构减小晶粒尺寸，随机化晶体取向并降低晶体生长速率。 缓冲层可以是固溶体或多相合金。 通过在衬底的表面和发射层之间沉积缓冲剂来制造阴极的方法，其中沉积的缓冲液改变，随机化，小型化和/或隔离衬底表面处的晶粒结构以减小晶粒尺寸， 随机化晶体取向并降低晶体生长速率。

公开(公告)号：US20050046326A1

公开(公告)日：2005-03-03

申请号：US10963156

申请日：2004-10-12

Applicant: Sungho Jin ,  Victor Katsap ,  Warren Waskiewicz ,  Wei Zhu

Inventor： Sungho Jin ,  Victor Katsap ,  Warren Waskiewicz ,  Wei Zhu

IPC: G03F7/20 ,  H01J1/15 ,  H01J1/18 ,  H01J9/02 ,  H01J9/04 ,  H01J37/06 ,  H01L21/027 ,  H01J1/14

CPC classification number: H01J1/15 ,  H01J9/042 ,  H01J37/06 ,  H01J2237/3175

Abstract: A cathode with an improved work function, for use in a lithographic system, such as the SCALPEL™ system, which includes a buffer between a substrate and an emissive layer, where the buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth. The buffer layer may be a solid solution or a multiphase alloy. A method of making the cathode by depositing a buffer between a surface of the substrate and an emissive layer, where the deposited buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth.

Abstract translation: 具有改进的功函数的阴极，用于诸如SCALPEL TM系统的光刻系统，其包括衬底和发射层之间的缓冲器，其中缓冲区改变，随机化，小型化和/或隔离 晶粒表面的晶粒结构减小晶粒尺寸，随机化晶体取向并降低晶体生长速率。 缓冲层可以是固溶体或多相合金。 通过在衬底的表面和发射层之间沉积缓冲剂来制造阴极的方法，其中沉积的缓冲液改变，随机化，小型化和/或隔离衬底表面处的晶粒结构以减小晶粒尺寸， 随机化晶体取向并降低晶体生长速率。

公开(公告)号：US06815876B1

公开(公告)日：2004-11-09

申请号：US09338520

申请日：1999-06-23

Applicant: Sungho Jin ,  Victor Katsap ,  Warren K. Waskiewicz ,  Wei Zhu

Inventor： Sungho Jin ,  Victor Katsap ,  Warren K. Waskiewicz ,  Wei Zhu

IPC: H01J120

CPC classification number: H01J1/15 ,  H01J9/042 ,  H01J37/06 ,  H01J2237/3175

Abstract: A cathode with an improved work function, for use in a lithographic system, such as the SCALPEL™ system, which includes a buffer between a substrate and an emissive layer, where the buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth. The buffer layer may be a solid solution or a multiphase alloy. A method of making the cathode by depositing a buffer between a surface of the substrate and an emissive layer, where the deposited buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth.

公开(公告)号：US06420714B1

公开(公告)日：2002-07-16

申请号：US09591626

申请日：2000-06-09

Applicant: Victor Katsap ,  Eric Munro ,  John Andrew Rouse ,  Warren K Waskiewicz ,  Xieqing Zhu

Inventor： Victor Katsap ,  Eric Munro ,  John Andrew Rouse ,  Warren K Waskiewicz ,  Xieqing Zhu

IPC: G21K108

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/141 ,  H01J2237/31791

Abstract: An apparatus for projection lithography is disclosed. The apparatus has at least one magnetic doublet lens. An aperture scatter filter is interposed between the two lenses of the magnetic doublet lens. The aperture scatter filter is in the back focal plane of the magnetic doublet lens system, or in an equivalent conjugate plane thereof. The apparatus also has two magnetic clamps interposed between the two lenses in the magnetic doublet lens. The clamps are positioned and configured to prevent substantial overlap of the magnetic lens fields. The magnetic clamps are positioned so that the magnetic fields from the lenses in the magnetic doublet lens do not extend to the aperture scatter filter.

Abstract translation: 公开了一种用于投影光刻的装置。 该装置具有至少一个磁双峰透镜。 孔径散射滤光片插入在磁性双透镜透镜的两个透镜之间。 孔径散射滤光器位于磁性双透镜系统的后焦平面中或其等效的共轭平面中。 该装置还具有夹在磁性双透镜中的两个透镜之间的两个磁性夹具。 夹具被定位和配置以防止磁性透镜场的实质重叠。 磁性夹具被定位成使得来自磁性双透镜的透镜的磁场不延伸到孔径散射滤光器。

公开(公告)号：US06400090B2

公开(公告)日：2002-06-04

申请号：US09818799

申请日：2001-03-27

Applicant: Victor Katsap ,  James Alexander Liddle ,  Warren Kazmir Waskiewicz

Inventor： Victor Katsap ,  James Alexander Liddle ,  Warren Kazmir Waskiewicz

IPC: H01J2948

CPC classification number: H01J37/065 ,  H01J2237/3175 ,  Y10S430/143

Abstract: The specification describes a method and apparatus for electron beam lithography wherein a Wehnelt electron gun is modified to improve the uniformity of the electron beam. A mesh grid is applied to the Wehnelt aperture and the mesh grid functions as a multiple secondary emitter to produce a uniform beam flux over a wide area. The grid voltage of the modified gun is substantially lower than in a conventional Wehnelt gun, i.e. less than 100 volts, which can be switched conveniently and economically using semiconductor drive circuits.

Abstract translation: 本说明书描述了一种用于电子束光刻的方法和装置，其中修改了Wehnelt电子枪以改善电子束的均匀性。 网格格栅应用于Wehnelt孔径，网格栅格用作多重二次发射器，以在广泛的区域产生均匀的光束通量。 修改枪的电网电压基本上低于常规的Wehnelt枪，即小于100伏特，其可以使用半导体驱动电路方便和经济地切换。