公开(公告)号：DE60227232D1

公开(公告)日：2008-08-07

申请号：DE60227232

申请日：2002-12-17

Applicant: XEROX CORP

Inventor： BOUR DAVID P ,  KNEISSL MICHAEL A

IPC: H01L33/00 ,  H01S5/042 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

Abstract: Graded semiconductor layers (200,202) between GaN and AlGaN layers (118,120) in a nitride based semiconductor laser structure reduce the threshold voltage of the laser structure by reducing the electric potential barrier at the interface between the GaN and AlGaN layers. The graded layers can be step graded, continuous graded or digital graded.

公开(公告)号：DE60025407D1

公开(公告)日：2006-04-06

申请号：DE60025407

申请日：2000-04-07

Applicant: XEROX CORP

Inventor： VAN DE WALLE CHRISTIAN G ,  BOUR DAVID P ,  KNEISSL MICHAEL A ,  ROMANO LINDA T

IPC: H01S5/20 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343

Abstract: An asymmetric waveguide nitride laser diode structure and a method of fabricating the same is provided. The asymmetric laser diode structure comprises an active layer having a first and a second surface, a transition layer in contact with the first surface of the active layer, a p-cladding layer disposed adjacent to the transition layer, and an n-type layer in contact with the second surface of the active layer.

公开(公告)号：BRPI0305936B1

公开(公告)日：2015-03-31

申请号：BR0305936

申请日：2003-12-08

Applicant: XEROX CORP

Inventor： KNEISSL MICHAEL A ,  TREAT DAVID W

IPC: C23C16/34 ,  H01L33/00 ,  C30B25/02 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L21/78 ,  H01L31/18 ,  H01S5/042 ,  H01S5/343

公开(公告)号：DE60239445D1

公开(公告)日：2011-04-28

申请号：DE60239445

申请日：2002-12-17

Applicant: XEROX CORP

Inventor： KNEISSL MICHAEL A ,  KIESEL PETER ,  VAN DE WALLE CHRISTIAN G

IPC: H01S5/042 ,  H01S5/323 ,  H01S5/343

公开(公告)号：BR0205192A

公开(公告)日：2004-06-29

申请号：BR0205192

申请日：2002-12-19

Applicant: XEROX CORP

Inventor： BOUR DAVID P ,  KNEISSL MICHAEL A

IPC: H01S5/042 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S5/06

Abstract: Graded semiconductor layers (200,202) between GaN and AlGaN layers (118,120) in a nitride based semiconductor laser structure reduce the threshold voltage of the laser structure by reducing the electric potential barrier at the interface between the GaN and AlGaN layers. The graded layers can be step graded, continuous graded or digital graded.

公开(公告)号：BR0207606A

公开(公告)日：2003-12-02

申请号：BR0207606

申请日：2002-12-20

Applicant: XEROX CORP

Inventor： KNEISSL MICHAEL A ,  KIESEL PETER ,  WALLE CHRISTIAN G VAN DE

IPC: H01S5/042 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: A p-n tunnel junction between a p-type semiconductor layer (214) and a n-type semiconductor layer (210) provides current injection for an edge-emitting nitride based semiconductor laser structure. The amount of p-type material in the nitride based semiconductor laser structure can be minimized, with attendant advantages in electrical, thermal, and optical performance, and in fabrication.

公开(公告)号：BR0204088A

公开(公告)日：2003-09-16

申请号：BR0204088

申请日：2002-10-07

Applicant: XEROX CORP

Inventor： KNEISSL MICHAEL A ,  PAOLI THOMAS L

IPC: H01S5/026 ,  H01S5/323 ,  H01S5/343 ,  H01S5/30

Abstract: A III-V nitride blue laser diode (100) has an amplifier (116) region and a modulator (118) region. The amplifier region (116) has a constant current to keep the region near the lasing threshold. The modulator region has a small varying forward current or reverse bias voltage which controls the light output of the laser (100). This two section blue laser diode requires much lower power consumption than directly modulated lasers which reduces transient heating and "drooping" of the light output.

公开(公告)号：JP2012089894A

公开(公告)日：2012-05-10

申请号：JP2012022806

申请日：2012-02-06

Applicant: Xerox Corp ,  ゼロックス コーポレイションXerox Corporation

Inventor： DAVID P BAUER ,  KNEISSL MICHAEL A ,  LINDA T ROMANO ,  PAOLI THOMAS L ,  VAN DE WALLE CHRISTIAN G

IPC: H01S5/227 ,  H01S5/343 ,  H01S5/22 ,  H01S5/32 ,  H01S5/323

CPC classification number: B82Y20/00 ,  H01S5/2218 ,  H01S5/2222 ,  H01S5/2275 ,  H01S5/3211 ,  H01S5/34333

Abstract: PROBLEM TO BE SOLVED: To provide a laser diode having a stronger mode stability and a low threshold current operation.SOLUTION: The index guide type heterostructure nitride laser structure 100 has a first waveguide layer, a second waveguide layer, a multiple quantum well structure 145 interposed between the first and second waveguide layers, a ridge structure 111 having first, second and third faces, and a buried layer 155 existing on the first, second and third faces of the ridge structure 111.

Abstract translation: 要解决的问题：提供具有更强的模式稳定性和低阈值电流操作的激光二极管。 解决方案：引导型异质结构氮化物激光器结构100具有第一波导层，第二波导层，介于第一和第二波导层之间的多量子阱结构145，具有第一，第二和第三波导层的脊结构111 表面和存在于脊结构111的第一，第二和第三面上的掩埋层155.版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2003234542A

公开(公告)日：2003-08-22

申请号：JP2002364556

申请日：2002-12-17

Applicant: XEROX CORP

Inventor： CHUA CHRISTOPHER L ,  KNEISSL MICHAEL A ,  BOUR DAVID P

IPC: H01L33/00 ,  H01L33/10 ,  H01L33/46 ,  H01S5/183 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a method for fabricating a nitride based resonator semiconductor structure in which distributed Bragg reflectors (DBR) are provided on the opposite sides. SOLUTION: A nitride based resonator semiconductor structure 140 having a first distributed Bragg reflector 122 is provided on a sapphire substrate and coupled with a second substrate 128. The sapphire substrate is then removed by laser assist epitaxial lift off and a second Bragg reflector 142 is provided on the side of the VCSEL structure opposite to the first distributed Bragg reflector 122. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2009182346A

公开(公告)日：2009-08-13

申请号：JP2009119394

申请日：2009-05-18

Applicant: Xerox Corp ,  ゼロックス コーポレイションXerox Corporation

Inventor： KNEISSL MICHAEL A ,  PAOLI THOMAS L

IPC: H01S5/026 ,  H01S5/323 ,  H01S5/343

CPC classification number: B82Y20/00 ,  H01S5/0265 ,  H01S5/0287 ,  H01S5/0625 ,  H01S5/06251 ,  H01S5/34333

Abstract: PROBLEM TO BE SOLVED: To provide a blue laser with reduced power output variations due to transient heating.
SOLUTION: A III-V nitride blue laser diode in a short periodic table has an amplifier region 116 and a modulator region 118. The amplifier region 116 has a constant current to keep the region near a lasing threshold. The modulator region 118 has a small varying forward current or reverse bias voltage which controls the light output of the laser. Since this two-section blue laser diode requires much lower power consumption than directly modulated lasers, transient heating and "drooping" of the light output are reduced.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供由于瞬态加热而导致的功率输出变化较小的蓝色激光。 解决方案：短周期表中的III-V族氮化物蓝色激光二极管具有放大器区域116和调制器区域118.放大器区域116具有恒定电流以保持该区域接近激光阈值。 调制器区域118具有控制激光器的光输出的小变化正向电流或反向偏置电压。 由于这种两段蓝色激光二极管比直接调制的激光器要低得多的功耗，因此可以减少光输出的瞬态加热和“下垂”。 版权所有（C）2009，JPO＆INPIT