公开(公告)号：DE68929069T2

公开(公告)日：2000-02-10

申请号：DE68929069

申请日：1989-10-12

Applicant: XEROX CORP

Inventor： EPLER JOHN E ,  TREAT DAVID W ,  PAOLI THOMAS L

IPC: C30B33/08 ,  H01L21/203 ,  H01L21/205 ,  H01L21/268 ,  H01S5/16 ,  H01S5/223 ,  H01S5/227

Abstract: In situ evaporation of selected surface regions or layers of compound semiconductors is accomplished, without breaking the growth system environment by employing photo-induced evaporation enhancement in chemical vapor deposition epitaxy. Intense radiation from an energy source (27) desorbs or causes evaporation of consecutive monolayers of atoms or combined atoms from the surface crystal (34) by thermal evaporation. The desorbed atoms from the growth surface are removed atomic layer by atomic layer in a fairly uniform and systematic manner, and may be characterized as "monolayer peeling", resulting in a morphology that is sculpturally smooth and molecularly continuous. In this sense, the method of this invention is analogous to erasing or etching crystal material and is the antithesis to laser deposition patterning, wherein erasure after growth or reduced rate of growth during growth provides "negative growth patterning". This patternable negative growth process is coupled with a positive growth process for selectively thinning regions of semiconductor layers in three-dimensional crystal structures, limited only by the functional capabilities of the growth reactor. Selective monotonic increasing and decreasing film thickness in situ can be accomplished while beam illumination (26) remains stationary for a predetermined period with exposure of the growth surface accomplished through a patterned mask or, alternatively, while the beam spot or multiple beam spots are modulated and scanned across the growth surface of the film.

公开(公告)号：BR0305936A

公开(公告)日：2004-09-14

申请号：BR0305936

申请日：2003-12-08

Applicant: XEROX CORP

Inventor： KNEISSL MICHAEL A ,  TREAT DAVID W

IPC: C23C16/34 ,  C30B25/02 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L31/18 ,  H01S5/042 ,  H01S5/343 ,  H01L33/00 ,  H01L21/78

Abstract: A method of using ammonia to form a GaAs alloy with nitrogen atoms is described. The method includes the operation of introducing ammonia with an agent to assist in the breakdown of the ammonia into a reaction chamber with the GaAs film. Agents that are described include radiation as well as compounds that include aluminum.

公开(公告)号：DE68929069D1

公开(公告)日：1999-10-14

申请号：DE68929069

申请日：1989-10-12

Applicant: XEROX CORP

Inventor： EPLER JOHN E ,  TREAT DAVID W ,  PAOLI THOMAS L

IPC: C30B33/08 ,  H01L21/203 ,  H01L21/205 ,  H01L21/268 ,  H01S5/16 ,  H01S5/223 ,  H01S5/227

Abstract: In situ evaporation of selected surface regions or layers of compound semiconductors is accomplished, without breaking the growth system environment by employing photo-induced evaporation enhancement in chemical vapor deposition epitaxy. Intense radiation from an energy source (27) desorbs or causes evaporation of consecutive monolayers of atoms or combined atoms from the surface crystal (34) by thermal evaporation. The desorbed atoms from the growth surface are removed atomic layer by atomic layer in a fairly uniform and systematic manner, and may be characterized as "monolayer peeling", resulting in a morphology that is sculpturally smooth and molecularly continuous. In this sense, the method of this invention is analogous to erasing or etching crystal material and is the antithesis to laser deposition patterning, wherein erasure after growth or reduced rate of growth during growth provides "negative growth patterning". This patternable negative growth process is coupled with a positive growth process for selectively thinning regions of semiconductor layers in three-dimensional crystal structures, limited only by the functional capabilities of the growth reactor. Selective monotonic increasing and decreasing film thickness in situ can be accomplished while beam illumination (26) remains stationary for a predetermined period with exposure of the growth surface accomplished through a patterned mask or, alternatively, while the beam spot or multiple beam spots are modulated and scanned across the growth surface of the film.

公开(公告)号：BRPI0305936B1

公开(公告)日：2015-03-31

申请号：BR0305936

申请日：2003-12-08

Applicant: XEROX CORP

Inventor： KNEISSL MICHAEL A ,  TREAT DAVID W

IPC: C23C16/34 ,  H01L33/00 ,  C30B25/02 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L21/78 ,  H01L31/18 ,  H01S5/042 ,  H01S5/343

公开(公告)号：JP2010147504A

公开(公告)日：2010-07-01

申请号：JP2010058879

申请日：2010-03-16

Applicant: Xerox Corp ,  ゼロックス コーポレイションXerox Corporation

Inventor： MICHAEL A KNEISEL ,  TREAT DAVID W

IPC: C23C16/34 ,  H01L21/205 ,  C30B25/02 ,  C30B29/40 ,  H01L21/20 ,  H01L31/18 ,  H01S5/042 ,  H01S5/343

CPC classification number: C30B29/40 ,  C30B25/02 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/0262 ,  H01L31/1844 ,  Y02E10/544

Abstract: PROBLEM TO BE SOLVED: To provide an excellent nitrogen source for forming an InGaAsN structure.
SOLUTION: A method of using ammonia to form a GaAs alloy with nitrogen atoms is described. The method includes the operation 508 of introducing ammonia with an agent which assists in the decomposition of ammonia into a reaction chamber with the GaAs film.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供用于形成InGaAsN结构的优异的氮源。 解决方案：描述了使用氨以形成具有氮原子的GaAs合金的方法。 该方法包括将氨引入有助于将氨分解成与GaAs膜反应室的操作508。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2004193616A

公开(公告)日：2004-07-08

申请号：JP2003409775

申请日：2003-12-09

Applicant: Xerox Corp ,  ゼロックス コーポレイションXerox Corporation

Inventor： MICHAEL A KNEISEL ,  TREAT DAVID W

IPC: C23C16/34 ,  C30B25/02 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L31/18 ,  H01S5/042 ,  H01S5/343

CPC classification number: C30B29/40 ,  C30B25/02 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/0262 ,  H01L31/1844 ,  Y02E10/544

Abstract: PROBLEM TO BE SOLVED: To provide a good nitrogen source for forming an InGaAs structure.
SOLUTION: The process uses ammonia in order to form GaAs using nitrogen atoms. The process includes an operation 508 for introducing ammonia together with an acceleration reagent of ammonia decomposition into a reaction chamber including a thin film of GaAs.
COPYRIGHT: (C)2004,JPO&NCIPI