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    PRINTHEAD ARRAY COMPENSATION DEVICE DESIGNS
    12.
    发明专利
    PRINTHEAD ARRAY COMPENSATION DEVICE DESIGNS 未知

    公开(公告)号：CA2323566C

    公开(公告)日：2006-11-28

    申请号：CA2323566

    申请日：2000-10-13

    Applicant: XEROX CORP

    Inventor： ELHATEM ABDUL M ,  BAKER LAMAR T ,  LERMA JAIME ,  YAZDY MOSTAFA R

    IPC: B41J2/045 ,  B41J2/04

    Abstract: Described are various compensation circuit designs to ensure proper shutoff of an unselected transducer in a transducer switching matrix. The switch of an unselected transducer is moved to a strong OFF state by injection of a compensation current. The compensation network is implemented as semiconductor integrated circuits which provide a high-voltage column switching diode, and a compensation switch. The compensation switch and column switching diode are configured su ch that they are isolated from each other.

    13.
    发明专利
    未知

    公开(公告)号：DE69733235D1

    公开(公告)日：2005-06-16

    申请号：DE69733235

    申请日：1997-10-02

    Applicant: XEROX CORP

    Inventor： BUHLER STEVEN A ,  LERMA JAIME

    IPC: H01L27/092 ,  H01L21/8238 ,  H01L27/06 ,  H01L29/861 ,  H01L29/868

    Abstract: An integrated CMOS diode (8) with an injection ring (14) which enables construction of an integrated CMOS diode that has the performance characteristics of a high impedance value, when the diode is in the off state, and low impedance, when the diode is in the on state in addition to high breakdown voltages using standard CMOS processing techniques to construct the integrated circuit diode.

    INTEGRATED DEVICE HAVING MOS TRANSISTORS WHICH ENABLE POSITIVE AND NEGATIVE VOLTAGES SWINGS
    16.
    发明专利
    INTEGRATED DEVICE HAVING MOS TRANSISTORS WHICH ENABLE POSITIVE AND NEGATIVE VOLTAGES SWINGS 未知

    公开(公告)号：CA2125052C

    公开(公告)日：1998-09-01

    申请号：CA2125052

    申请日：1994-06-03

    Applicant: XEROX CORP

    Inventor： MOJARADI MOHAMAD M ,  VO TUAN ,  LERMA JAIME ,  BUHLER STEVEN A

    IPC: H01L29/78 ,  H01L27/02 ,  H01L27/092 ,  H03K17/30 ,  H01L27/04

    Abstract: A semiconductor circuit integrated with CMOS circuits for receiving a TTL input voltage and generating a large negative and positive voltage swing with respect to p-type or n-type substrate is disclosed. This invention is based on elimination of the electro-static discharge (ESD) protection circuit which is a requirement for any integrated circuit. Eliminating the ESD protection circuit a lso eliminates the clamping feature of the ESD protection circuit and therefore the circuit can be driven to negative voltages for PMOS circuits and to positive vol tages for NMOS circuits. This provides the possibility of connecting the drain of a a P-channel type metal oxide silicon field effect (PMOS) transistor, which is fabr icated on a p-type substrate within an n-well, to a voltage below the the substrate voltag e. Also, in a n-channel type metal oxide silicon field effect (NMOS) transistor whi ch is fabricated on a n-type substrate within a P-well, the drain can be connected to voltages higher than the substrate voltage. Utilizing this feature of a MOS tran sistor provides a way to design an integrated circuit which can handle negative voltage swings as well as positive voltage swings.

    CMOS INTEGRATED CIRCUIT DIODE
    17.
    发明专利
    CMOS INTEGRATED CIRCUIT DIODE 失效

    公开(公告)号：JPH10135490A

    公开(公告)日：1998-05-22

    申请号：JP27301097

    申请日：1997-10-06

    Applicant: XEROX CORP

    Inventor： BUHLER STEVEN A ,  LERMA JAIME

    IPC: H01L27/092 ,  H01L21/8238 ,  H01L27/06 ,  H01L29/861 ,  H01L29/868

    Abstract: PROBLEM TO BE SOLVED: To provide a CMOS integrated circuit diode having such characteristics that it has a high impedance value at the time of reverse bias and a low impedance value at the time of forward bias. SOLUTION: A diode 8 is a columnar device having a center line C and is formed by forming a n-well cathode 12 on a substrate composed of p- epitaxial 18, in which a ring is buried with a p+ substrate 26 and a p- epitaxial anode 10 at its center. The n-well cathode 12 is buried at the depth of 'd1' (3.5-4.5 micrometers). The width of the n-well cathode 12 is approx. 80-3.0 micrometers in a position approx. 5-10 micro meters away from the center line C. The n-well cathode 12 is electrically connected through an n+ metal contact 20. The n-well cathode 12 is connected to metal wiring using the n+ metal contact 20. The p- epitaxial anode of the diode 8 formed by the n-well cathode 12 is grounded through the p- epitaxial anode contact.

    CMOS-INTEGRATED RF SWITCH
    19.
    发明专利
    CMOS-INTEGRATED RF SWITCH 失效

    公开(公告)号：JPH10199995A

    公开(公告)日：1998-07-31

    申请号：JP30890197

    申请日：1997-11-11

    Applicant: XEROX CORP

    Inventor： BUHLER STEVEN A ,  LERMA JAIME ,  MOJARRADI MOHAMMAD M

    IPC: H01L27/092 ,  H01L21/8238 ,  H01L27/06 ,  H01L29/861

    Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing an integrated RF switching cell having a CMOS circuit. SOLUTION: This CMOS integrated RF switch has the following: an RF signal input node, a logical input node, a diode 24 provided with an anode, a cathode, and a charge injection node, a charge injection node driver 60 provided with an input and an output which are capable of driving from a negative voltage to at least a zero volt signal, a similar high-voltage level translater 64, a similar high-voltage driver 62, and an RC filter connected between a high- voltage driver output and an RF signal input.

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