公开(公告)号：DE60039667D1

公开(公告)日：2008-09-11

申请号：DE60039667

申请日：2000-10-18

Applicant: XEROX CORP

Inventor： BAKER LAMAR T ,  BUHLER STEVEN A ,  ELHATEM ABDUL M ,  ELROD SCOTT A ,  HADIMIOGLU BABUR B ,  LERMA JAIME ,  YAZDY MOSTAFA R

IPC: B41J2/015 ,  H03K7/08 ,  B41J2/045 ,  B41J2/055 ,  B41J2/14 ,  H03K5/05

Abstract: An apparatus for pulse width modulation comprises a delaying means (DL1-DL32) which receives a pulse (IP) and creates a plurality of modulated pulses. The pulse (IP) has a first pulse edge (t1) and a second pulse edge (t2). The apparatus further comprises a lookup table (66) for storing individual delay data for each of said plurality of modulated pulses, which delay data is communicated from the lookup table (66) to the delaying means (DL1-DL32). The delaying means (DL1-DL32) is responsive to the delay data from the lookup table (66) to delay only the first pulse edge of each pulse.

公开(公告)号：DE69723537T2

公开(公告)日：2004-01-29

申请号：DE69723537

申请日：1997-11-04

Applicant: XEROX CORP

Inventor： BUHLER STEVEN A ,  LERMA JAIME ,  MOJARRADI MOHAMMAD M

IPC: H01L27/092 ,  H01L21/8238 ,  H01L27/06 ,  H01L29/861 ,  H01P1/15 ,  B41J2/04 ,  H03K17/74

公开(公告)号：CA2216083C

公开(公告)日：2001-11-13

申请号：CA2216083

申请日：1997-09-22

Applicant: XEROX CORP

Inventor： LERMA JAIME ,  BUHLER STEVEN A

IPC: H01L27/092 ,  H01L21/8238 ,  H01L27/06 ,  H01L29/861 ,  H01L29/868

Abstract: An integrated CMOS diode with an injection ring which enables construction of an integrated CMOS diode that has the performance characteristics of a high impedance value, when the diode is in the off state, and low impedance, when the diode is in the on state in addition to high breakdown voltages using standard CMOS processing techniques to construct the integrated circuit diode.

公开(公告)号：CA2323566A1

公开(公告)日：2001-05-22

申请号：CA2323566

申请日：2000-10-13

Applicant: XEROX CORP

Inventor： LERMA JAIME ,  YAZDY MOSTAFA R ,  ELHATEM ABDUL M ,  BAKER LAMAR T

IPC: B41J2/04 ,  B41J2/045

Abstract: Described are various compensation circuit designs to ensure proper shutoff of an unselected transducer in a transducer switching matrix. The switch of an unselected transducer is moved to a strong OFF state by injection of a compensation current. The compensation network is implemented as semiconductor integrated circuits which provide a high-voltage column switching diode, and a compensation switch. The compensation switch and column switching diode are configured su ch that they are isolated from each other.

公开(公告)号：BR9704972A

公开(公告)日：1999-01-26

申请号：BR9704972

申请日：1997-10-03

Applicant: XEROX CORP

Inventor： BUHLER STEVEN A ,  LERMA JAIME

IPC: H01L27/092 ,  H01L21/8238 ,  H01L27/06 ,  H01L29/861 ,  H01L29/868 ,  H01L29/06 ,  H01L31/0352

Abstract: An integrated CMOS diode (8) with an injection ring (14) which enables construction of an integrated CMOS diode that has the performance characteristics of a high impedance value, when the diode is in the off state, and low impedance, when the diode is in the on state in addition to high breakdown voltages using standard CMOS processing techniques to construct the integrated circuit diode.

公开(公告)号：BR9402676A

公开(公告)日：1995-05-02

申请号：BR9402676

申请日：1994-07-11

Applicant: XEROX CORP

Inventor： MOJARADI MOHAMAD M ,  VO TUAN ,  LERMA JAIME ,  BUHLER STEVEN A

IPC: H01L29/78 ,  H01L27/02 ,  H01L27/092 ,  H03K17/30 ,  H01L27/085

公开(公告)号：DE69733235T2

公开(公告)日：2005-10-06

申请号：DE69733235

申请日：1997-10-02

Applicant: XEROX CORP

Inventor： BUHLER STEVEN A ,  LERMA JAIME

IPC: H01L27/092 ,  H01L21/8238 ,  H01L27/06 ,  H01L29/861 ,  H01L29/868

Abstract: An integrated CMOS diode (8) with an injection ring (14) which enables construction of an integrated CMOS diode that has the performance characteristics of a high impedance value, when the diode is in the off state, and low impedance, when the diode is in the on state in addition to high breakdown voltages using standard CMOS processing techniques to construct the integrated circuit diode.

公开(公告)号：CA2217595C

公开(公告)日：2001-04-10

申请号：CA2217595

申请日：1997-10-07

Applicant: XEROX CORP

Inventor： MOJARRADI MOHAMMAD M ,  LERMA JAIME ,  BUHLER STEVEN A

IPC: H01L27/092 ,  H01L21/8238 ,  H01L27/06 ,  H01L29/861 ,  H03K17/74

Abstract: An integrated CMOS diode with an injection ring that enables construction of an integrated CMOS RF switch. Construction techniques of using a diffused n-we ll resistor, parasitic capacitance and construction of the diode underneath a b onding input pad contribute to performance of the switch as well as saving space needed t o construct the switch. 19

公开(公告)号：CA2217595A1

公开(公告)日：1998-05-12

申请号：CA2217595

申请日：1997-10-07

Applicant: XEROX CORP

Inventor： BUHLER STEVEN A ,  MOJARRADI MOHAMMAD M ,  LERMA JAIME

IPC: H01L27/092 ,  H01L21/8238 ,  H01L27/06 ,  H01L29/861 ,  H03K17/74

Abstract: An integrated CMOS diode with an injection ring that enables construction of an integrated CMOS RF switch. Construction techniques of using a diffused n-we ll resistor, parasitic capacitance and construction of the diode underneath a b onding input pad contribute to performance of the switch as well as saving space needed t o construct the switch. 19

公开(公告)号：CA2216083A1

公开(公告)日：1998-04-04

申请号：CA2216083

申请日：1997-09-22

Applicant: XEROX CORP

Inventor： LERMA JAIME ,  BUHLER STEVEN A

IPC: H01L27/092 ,  H01L21/8238 ,  H01L27/06 ,  H01L29/861 ,  H01L29/868

Abstract: An integrated CMOS diode with an injection ring which enables construction of an integrated CMOS diode that has the performance characteristics of a high impedance value, when the diode is in the off state, and low impedance, when the diode is in the on state in addition to high breakdown voltages using standard CMOS processing techniques to construct the integrated circuit diode.