公开(公告)号：DE60039667D1

公开(公告)日：2008-09-11

申请号：DE60039667

申请日：2000-10-18

Applicant: XEROX CORP

Inventor： BAKER LAMAR T ,  BUHLER STEVEN A ,  ELHATEM ABDUL M ,  ELROD SCOTT A ,  HADIMIOGLU BABUR B ,  LERMA JAIME ,  YAZDY MOSTAFA R

IPC: B41J2/015 ,  H03K7/08 ,  B41J2/045 ,  B41J2/055 ,  B41J2/14 ,  H03K5/05

Abstract: An apparatus for pulse width modulation comprises a delaying means (DL1-DL32) which receives a pulse (IP) and creates a plurality of modulated pulses. The pulse (IP) has a first pulse edge (t1) and a second pulse edge (t2). The apparatus further comprises a lookup table (66) for storing individual delay data for each of said plurality of modulated pulses, which delay data is communicated from the lookup table (66) to the delaying means (DL1-DL32). The delaying means (DL1-DL32) is responsive to the delay data from the lookup table (66) to delay only the first pulse edge of each pulse.

公开(公告)号：DE69825092D1

公开(公告)日：2004-08-26

申请号：DE69825092

申请日：1998-03-13

Applicant: XEROX CORP

Inventor： WAYMAN WILLIAM H ,  ELHATEM ABDUL M ,  TIEN PAUL C ,  VO TUAN ANH

IPC: G03G15/06 ,  G03G15/08 ,  H05K1/18

公开(公告)号：CA2044402A1

公开(公告)日：1992-01-03

申请号：CA2044402

申请日：1991-06-12

Applicant: XEROX CORP

Inventor： ELHATEM ABDUL M ,  BUHLER STEVEN A ,  MOJARADI MOHAMMED M ,  PATEL PUTUL D ,  MAZDIYAZNI PARVIZ P

IPC: B41J2/05 ,  B41J2/16 ,  B41J2/14

Abstract: A thermal inkjet printhead is disclosed having improved reliability and thermal efficiency. The printhead includes heating resistors and thin protective regionspositioned above the heating resistors for protecting the heating resistors fromcorrosion and cavitation damage from the ink. The heating resistors are positioned substantially within the geometric confines of the portion of the protective regions exposed to the ink. Positioned between the heating resistors and the underlying printhead structure are field oxide regions that thermally insulate the heating resistors from the underlying printhead structure. Positioned between the heating resistors and the underlying printhead structure is a passivation layer consisting of a middle layer of phosphorous glass, an underglaze between the middle layer and the underlying printhead structure, and glass mesas between the middle layer and theheating resistors. The underglaze helps prevent phosphorus from the middle layerfrom contaminating the underlying printhead structure. Similarly, the glass mesas prevent phosphorus from the middle layer from contaminating the heating resistors.

公开(公告)号：CA2323566A1

公开(公告)日：2001-05-22

申请号：CA2323566

申请日：2000-10-13

Applicant: XEROX CORP

Inventor： LERMA JAIME ,  YAZDY MOSTAFA R ,  ELHATEM ABDUL M ,  BAKER LAMAR T

IPC: B41J2/04 ,  B41J2/045

Abstract: Described are various compensation circuit designs to ensure proper shutoff of an unselected transducer in a transducer switching matrix. The switch of an unselected transducer is moved to a strong OFF state by injection of a compensation current. The compensation network is implemented as semiconductor integrated circuits which provide a high-voltage column switching diode, and a compensation switch. The compensation switch and column switching diode are configured su ch that they are isolated from each other.

公开(公告)号：BR9907506A

公开(公告)日：2000-10-03

申请号：BR9907506

申请日：1999-12-22

Applicant: XEROX CORP

Inventor： ELHATEM ABDUL M

IPC: H01L29/735

公开(公告)号：DE69825092T2

公开(公告)日：2004-12-09

申请号：DE69825092

申请日：1998-03-13

Applicant: XEROX CORP

Inventor： WAYMAN WILLIAM H ,  ELHATEM ABDUL M ,  TIEN PAUL C ,  VO TUAN ANH

IPC: G03G15/06 ,  G03G15/08 ,  H05K1/18

公开(公告)号：CA2441912A1

公开(公告)日：2004-03-27

申请号：CA2441912

申请日：2003-09-19

Applicant: XEROX CORP

Inventor： ELHATEM ABDUL M

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/78 ,  H01L29/76

Abstract: A high power MOSFET semiconductor having a high breakdown voltage. The new power device concept that reaches an area of a lower specific on- resistance, higher breakdown voltage and reduced device silicon area. This device architecture is built on the concepts of charge compensation in the drift region of the device. Where, the doping of the vertical drift region is increased by one order of magnitude. To counterbalance the added charges, fine-structured wells of opposite doping type to the drift region are introduced as part of the device structure. The charge compensation wells do not contribute to the on-state current conduction, therefore, this novel new generation of high voltage device architecture breaks the limit line of silicon. This architecture may extend to higher material resistivity and larger geometry to increase the voltage to 1kv plus.

公开(公告)号：CA2183383A1

公开(公告)日：1997-05-01

申请号：CA2183383

申请日：1996-08-15

Applicant: XEROX CORP

Inventor： ELHATEM ABDUL M ,  MOJARRADI MOHAMMAD M ,  SATO MASAJI

IPC: H03K17/10 ,  H03K17/785 ,  H03K17/795 ,  H03K17/78

Abstract: An improved optically controlled power supply regulator in which an optoisolator transistor is controlled by an input light emitting diode replaces an optically controlled power supply regulator with a light emitting diode controlled with a light dependent resistor. The optically controlled power supply regulator utilizes a capacitor and a resistor to reduce loop response oscillation in order to prevent the optically controlled power supply regulator from being shut down on a system board.

公开(公告)号：CA2441912C

公开(公告)日：2008-11-18

申请号：CA2441912

申请日：2003-09-19

Applicant: XEROX CORP

Inventor： ELHATEM ABDUL M

IPC: H01L29/76 ,  H01L21/336 ,  H01L29/06 ,  H01L29/78

Abstract: A high power MOSFET semiconductor having a high breakdown voltage. The new, power device concept that reaches an area of a lower specific on- resistance, higher breakdown voltage and reduced device silicon area. This device architecture is built on the concepts of charge compensation in the drift region of the device. Where, ,the doping of the vertical drift region is increased by one order of magnitude. To counterbalance the added charges, fine-structured wells of opposite doping type to the drift region are introduced as part of the device structure. The charge compensation wells do not contribute to the on-state current conduction, therefore, this novel new generation of high voltage device architecture breaks the limit line of silicon. This architecture may extend to higher material resistivity and larger geometry to increase the voltage to 1kv plus.

公开(公告)号：CA2323566C

公开(公告)日：2006-11-28

申请号：CA2323566

申请日：2000-10-13

Applicant: XEROX CORP

Inventor： ELHATEM ABDUL M ,  BAKER LAMAR T ,  LERMA JAIME ,  YAZDY MOSTAFA R

IPC: B41J2/045 ,  B41J2/04

Abstract: Described are various compensation circuit designs to ensure proper shutoff of an unselected transducer in a transducer switching matrix. The switch of an unselected transducer is moved to a strong OFF state by injection of a compensation current. The compensation network is implemented as semiconductor integrated circuits which provide a high-voltage column switching diode, and a compensation switch. The compensation switch and column switching diode are configured su ch that they are isolated from each other.