公开(公告)号：CA2038334C

公开(公告)日：1994-01-25

申请号：CA2038334

申请日：1991-03-15

Applicant: XEROX CORP

Inventor： PAOLI THOMAS L ,  CONNELL G A NEVILLE ,  SCIFRES DONALD R ,  THORNTON ROBERT L

IPC: H01S5/00 ,  H01L27/15 ,  H01S5/026 ,  H01S5/042 ,  H01S5/06 ,  H01S5/0683 ,  H01S5/40 ,  H01L31/14 ,  H01S3/133 ,  H01S3/25

Abstract: APPARATUS AND METHOD FOR DETECTING THE POWER LEVEL IN SINGLE AND MULTI-STRIPE INTEGRATED LASERS The purpose of the present invention is to provide an apparatus for detection of a laser output on a semiconductor wafer, especially where the laser and detector are formed by similar or simultaneous processes on the same substrate. A laser cavity and a detection cavity are formed on a semiconductor wafer. The two are formed in parallel such that each has a generally axial orientation. Light emitted laterally from the laser cavity is detected by the detection cavity. The amount of light detected can then be transformed into data, which in turn can be used to control the output of the laser. Advantages of the present invention include the ability to simultaneously form the laser and detector portions, the detector portion so formed does not interfere with the beam being provided by the laser, and the ability to integrate multiple laser-sensor pairs in a semiconductor device.

公开(公告)号：DE3380905D1

公开(公告)日：1990-01-04

申请号：DE3380905

申请日：1983-07-28

Applicant: XEROX CORP

Inventor： SCIFRES DONALD R ,  SPRAGUE ROBERT A

IPC: G02B27/09 ,  G02B13/00 ,  H01S3/00

公开(公告)号：CA1138968A

公开(公告)日：1983-01-04

申请号：CA335310

申请日：1979-09-06

Applicant: XEROX CORP

Inventor： SCIFRES DONALD R ,  STREIFER WILLIAM ,  BURNHAM ROBERT D

IPC: H01S5/00 ,  H01S5/40 ,  H01S3/18

Abstract: MONOLITHIC MULTI-EMITTING LASER DEVICE A monolithic laser device produces a plurality of spatially displaced emitting cavities in an active layer of a semiconductor body acting as a waveguide for light wave propagation under lasing conditions. Various means are disclosed to deflect and directly couple a portion of the optical wave propagation into one or more different spatially displaced emitting cavities to improve coherence and reduce beam divergence.

公开(公告)号：CA1138560A

公开(公告)日：1982-12-28

申请号：CA325259

申请日：1979-04-10

Applicant: XEROX CORP

Inventor： SCIFRES DONALD R ,  BURNHAM ROBERT D ,  STREIFER WILLIAM

IPC: G02B6/122 ,  H01L27/15 ,  H01S5/00 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/40 ,  G02F1/015 ,  H01S3/10

Abstract: A light beam scanner of the moving interference fringe pattern type which includes a body of semiconductor material having a source of coherentradiation and wave guides for guiding the coherent radiation along a plurality of spatially displaced paths which are optically uncoupled, and a device associated with the spatially displaced paths for producing relative phase changes between radiation in the different paths whereby interference fringes in the far field are spatially scanned. In addition, wavelength modulation of the laser over a range of about 80.ANG. can be achieved. The source of the coherent radiation can be a single laser or a plurality of optically coupled lasers, and the optical uncoupling can be achieved by spatial displacement of the paths or by insertion of a high loss medium between the paths

公开(公告)号：FR2492170A1

公开(公告)日：1982-04-16

申请号：FR8119232

申请日：1981-10-13

Applicant: XEROX CORP

Inventor： RAWSON ERIC GORDON ,  SCIFRES DONALD R ,  BURNHAM ROBERT DANNER

IPC: H04B10/00 ,  G02B6/00 ,  G02F1/015 ,  H01L27/15 ,  H01L31/12 ,  H04B10/04 ,  H04B10/06 ,  H04B10/142 ,  H04B10/152 ,  H04B10/17 ,  H04B10/29 ,  H01L31/16 ,  G02B5/14 ,  H04B9/00

公开(公告)号：FR2477286A1

公开(公告)日：1981-09-04

申请号：FR8103558

申请日：1981-02-23

Applicant: XEROX CORP

Inventor： SCIFRES DONALD R ,  BURNHAM ROBERT D ,  STREIFER WILLIAM

IPC: G02B6/00 ,  G02B6/293 ,  G02B6/34 ,  H01S5/00 ,  H01S5/14 ,  G02B5/14 ,  G02B5/20 ,  H01S3/082 ,  H01S3/18 ,  H04B9/00

Abstract: A fiber optic device basically comprising an optical fiber/interference filter combination finds useful application in optical communication systems for wavelength selection or bandwidth selection from a multiwavelength light source or emitter. If the emitter is a semiconductor laser, the device may be also employed to provide single longitudinal mode control at the selected wavelength or bandpass.

公开(公告)号：CA1065460A

公开(公告)日：1979-10-30

申请号：CA252590

申请日：1976-05-14

Applicant: XEROX CORP

Inventor： BURNHAM ROBERT D ,  SCIFRES DONALD R

IPC: H01L33/00 ,  H01L21/208 ,  H01S5/00 ,  H01S5/042 ,  H01S5/223 ,  H01S5/24 ,  H01S3/19

Abstract: BURIED-HETEROSTRUCTURE DIODE INJECTION LASER A buried-heterostructure (BH) diode injection laser capable of operating at low room temperature thresholds and in the lowest order TE, TM or TEM modes. The laser has an elongated groove in a substrate with the groove extending through a pump current confining layer with a central portion of the active layer substantially completely within the groove and substantially completely surrounded by light guiding and carrier confining layers of material having a lower index of refraction than the index of refraction of the material of the active layer. The light guiding and carrier confining layer in contact with the substrate has a central depression within the elongated groove and the central portion of the active layer is bowl-shaped and within the depression such that light waves produced by carrier recombination within the central portion of the active layer when the laser is forward biased are guided in the central portion of the active layer such that the laser produces a light beam having reduced width v. height dimensional variations such that the light beam can be used with symmetrical optical elements such as round lenses.

公开(公告)号：AU1521076A

公开(公告)日：1978-01-05

申请号：AU1521076

申请日：1976-06-23

Applicant: XEROX CORP

Inventor： BURNHAM ROBERT D ,  SCIFRES DONALD R

IPC: H01L33/00 ,  H01L21/208 ,  H01S5/00 ,  H01S5/042 ,  H01S5/223 ,  H01S5/24 ,  H01S3/18 ,  H01S3/06

公开(公告)号：DE2626775A1

公开(公告)日：1976-12-30

申请号：DE2626775

申请日：1976-06-15

Applicant: XEROX CORP

Inventor： BURNHAM ROBERT D ,  SCIFRES DONALD R

IPC: H01L33/00 ,  H01L21/208 ,  H01S5/00 ,  H01S5/042 ,  H01S5/223 ,  H01S5/24 ,  H01S3/19

公开(公告)号：DE2552870A1

公开(公告)日：1976-06-10

申请号：DE2552870

申请日：1975-11-25

Applicant: XEROX CORP

Inventor： BURNHAM ROBERT D ,  SCIFRES DONALD R

IPC: H01S5/00 ,  H01L33/00 ,  H01S5/20 ,  H01S3/19

Abstract: A method of making a diode laser in which a pump current confining channel is formed on the n-side of the diode laser prior to the growth of the active region of the diode laser. The current confining channel is formed by providing two spaced regions in a substrate with the regions being highly resistive to current flow when the diode laser is forwarded biased. Preferably, the regions are formed by diffusion of an impurity into a substrate of a selected conductivity type so as to form secondary p-n junctions on both sides of an intermediate channel, with subsequent growth of other layers of the diode laser providing a primary p-n junction at the boundary of the active laser region. Forward biasing of the primary p-n junction results in reverse biasing of the secondary p-n junctions and pump current confinement to the channel.