中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

47 records (took 0.032 seconds)

    Spring structure
    12.
    发明公开
    Spring structure 有权
    Federstruktur

    公开(公告)号：EP1304768A3

    公开(公告)日：2004-02-04

    申请号：EP02256864.6

    申请日：2002-10-02

    Applicant: Xerox Corporation

    Inventor： Romano, Linda T. ,  Fork, David K.

    IPC: H01R13/22 ,  B81B3/00

    CPC classification number: H05K3/4092 ,  G01R1/06727 ,  G01R3/00 ,  H01L2924/0002 ,  Y10T29/4913 ,  H01L2924/00

    Abstract: A stress-balancing layer (130) is formed over portions (122) of a spring metal finger (120) that remain attached to an underlying substrate (101) to counter internal stresses inherently formed in the spring metal finger (120). The (e.g., positive) internal stress of the spring metal causes the claw (tip) (125) of the spring metal finger (120) to bend away from the substrate (101) when an underlying release material is removed. The stress-balancing pad (130) is formed on an anchor portion (122) of the spring metal finger (120), and includes an opposite (e.g., negative) internal stress that counters the positive stress of the spring metal finger (120). A stress-balancing layer (230) is either initially formed over the entire spring metal finger (120) and then partially removed (etched) from the claw portion (125), or selectively deposited only on the anchor portion (122) of the spring metal finger (120). An interposing etch stop layer (325-1) is used when the same material composition is used to form both the spring metal (220) and stress-balancing (230) layers.

    Micro-electro-mechanical mirror structure
    14.
    发明公开
    Micro-electro-mechanical mirror structure 有权
    米克罗电力公司Spiegelstruktur

    公开(公告)号：EP1193523A2

    公开(公告)日：2002-04-03

    申请号：EP01307629.4

    申请日：2001-09-07

    Applicant: Xerox Corporation

    Inventor： Peeters, Eric ,  Rosa, Michel A. ,  Fork, David K.

    IPC: G02B26/02 ,  G02B26/08

    CPC classification number: G02B6/3518 ,  G02B6/3556 ,  G02B6/358 ,  G02B6/3584 ,  Y10S359/904

    Abstract: Optical cross-connect systems (100) involve the general concept of a two dimensional array of micro electromechanical systems (MEMS) tilt mirrors (104) being used to direct light coming from a first optical fiber (110) to a second optical fiber (111). Each MEMS tilt mirror in the two dimensional array can tilt about two non-colinear axes (x,y) and is suspended by a plurality of suspension arms (450) attached to a glass substrate

    Abstract translation: 光学交叉连接系统（100）涉及用于将来自第一光纤（110）的光引导到第二光纤（111）的微机电系统（MEMS）倾斜镜（104）的二维阵列的一般概念 ）。 二维阵列中的每个MEMS倾斜镜可以围绕两个非共线轴线（x，y）倾斜并且被附接到玻璃基底的多个悬架臂（450）悬挂。

    Illuminator apparatus for a scanner device
    15.
    发明公开
    Illuminator apparatus for a scanner device 有权
    Beleuchtungsvorrichtungfüreinen Abtaster

    公开(公告)号：EP0917084A2

    公开(公告)日：1999-05-19

    申请号：EP98309137.2

    申请日：1998-11-09

    Applicant: XEROX CORPORATION

    Inventor： Fork, David K.

    IPC: G06K7/00

    CPC classification number: G06K7/10732 ,  H04N1/486

    Abstract: An illuminator apparatus (10) for a scanner device (12) includes a support structure (28) that extends along the longitudinal axis and an array of light emitted elements (30) that are disposed on and supported by the support structure (28). The array of light emitting elements are arranged on the support structure in at least three longitudinal rows. The at least three rows of light emitting elements are associated with a respective one of blue, green and red colored light emitted elements. A color image sensor apparatus for a scanner device capable of scanning a multi-colored document and a method for illuminating a colored document being scanned in a scanning device are also described.

    Abstract translation: 一种用于扫描器装置（12）的照明装置（10）包括一个沿着纵向轴线延伸的支撑结构（28）和一组发光元件（30），该阵列设置在支撑结构（28）上并由支撑结构支撑。 发光元件阵列至少在三个纵向排布置在支撑结构上。 至少三行发光元件与蓝色，绿色和红色发光元件中的相应一个相关联。 还描述了能够扫描多色文档的扫描仪装置的彩色图​​像传感器装置和用于照射在扫描装置中扫描的彩色文件的方法。

    Epitaxial magnesium oxide as a buffer layer for formation of subsequent layers on tetrahedral semiconductors
    16.
    发明公开
    Epitaxial magnesium oxide as a buffer layer for formation of subsequent layers on tetrahedral semiconductors 失效
    对于层上的四面体半导体生长外延氧化镁的缓冲层。

    公开(公告)号：EP0544399A2

    公开(公告)日：1993-06-02

    申请号：EP92309403.1

    申请日：1992-10-15

    Applicant: XEROX CORPORATION

    Inventor： Fork, David K. ,  Nashimoto, Keiichi

    IPC: H01L21/20 ,  H01L21/316 ,  H01L39/24 ,  C30B23/02

    CPC classification number: H01L39/2461

    Abstract: A structure includes a semiconducting substrate (12;22;32) on which is formed an epitaxial buffer layer (14;24;34) of MgO and an epitaxial layer (16;26;38) of ferroelectric material or superconducting material or both. The semiconducting substrate (12;22;32) is of the tetrahedral structure type, and may be an elemental or compound material. The MgO buffer layer (14;24;34) on the tetrahedral semiconducting substrate allows epitaxial formation of the subsequent layers, facilitating the formation of a number of novel monolithic devices.

    Abstract translation: （16; 26; 38）一种结构，包括一个半导体基片（12; 22; 32）在其上形成的MgO的外延缓冲层（14 ;; 24 34）和外延铁电材料或超导材料或两者的层。 半导体基板（12; 22; 32）是四面体结构类型的，并且可以是单质或化合物材料。 的MgO缓冲层（14; 24; 34）上的四面体半导体衬底允许随后的层的外延形成，促进了一些新颖的单片器件的形成。

Patent Agency Ranking