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    刻蚀方法
    12.
    发明公开
    刻蚀方法 失效

    公开(公告)号：CN1616341A

    公开(公告)日：2005-05-18

    申请号：CN200410088661.0

    申请日：2004-11-15

    Applicant: 索尼株式会社

    Inventor： 逢坂勉

    IPC: B81C1/00 ,  B81B3/00

    CPC classification number: H01L21/31116 ,  B81C1/00047 ,  B81C1/00547 ,  B81C2201/117

    Abstract: 本发明提供了一种刻蚀方法，该刻蚀方法能够通过非常精细的刻蚀开口以较好的构造精度，形成具有大的空间部分或复杂结构的空腔部分。如下进行对被处理物体的刻蚀处理：首先，将被处理物体暴露于包含刻蚀反应种的处理流体(第三步骤S3和第四步骤S4)；然后，降低处理腔中的压强以使被处理物体附近的处理流体的密度低于在第四步骤S4中的密度(第一步骤S1)。在重复第一步骤S1到第四步骤S4的同时，在第一步骤S1之后进行的第三步骤S3和第四步骤S4中，包含刻蚀反应种的处理流体被重新输入到其中放置有被处理物体的处理气氛中，以使被处理物体附近的处理流体的密度高于第一步骤S1中的密度。

    Etching method
    13.
    发明授权
    Etching method 失效
    蚀刻方法

    公开(公告)号：US07105447B2

    公开(公告)日：2006-09-12

    申请号：US10979249

    申请日：2004-11-03

    Applicant: Tsutomu Oosaka

    Inventor： Tsutomu Oosaka

    IPC: H01L21/302 ,  H01L21/311

    CPC classification number: H01L21/31116 ,  B81C1/00047 ,  B81C1/00547 ,  B81C2201/117

    Abstract: To provide an etching method capable of forming a cavity portion having a large space portion or a complicated structure by etching a sacrifice layer through a very fine etching opening at favorable accuracy in configuration. An etching process of a object is carried out by exposing the object to a processing fluid containing etching reaction seed (the third step S3, the fourth step S4), and then, the pressure in the processing chamber is reduced to make a density of the processing fluid around the object lower than that in the fourth step S4 (the first step S1). While the first step S1 to the first step S4 are repeated, in the third step S3 and the fourth step S4 executed after the first step S1, the processing fluid containing etching reaction seed is newly supplied to the processing atmosphere in which the object is placed to make the density of the processing fluid around the object higher than that in the first step S1.

    Abstract translation: 为了提供能够通过以非常精细的蚀刻开口蚀刻牺牲层而形成具有大空间部分或复杂结构的空腔部分的蚀刻方法。 通过将物体暴露于含有蚀刻反应晶种的处理流体（第三步骤S 3，第四步骤S 4））来进行物体的蚀刻处理，然后将处理室中的压力减小以使密度 的处理流体低于第四步骤S4（第一步骤S1）。 当重复第一步骤S1至第一步骤S4时，在第一步骤S1之后执行的第三步骤S 3和第四步骤S 4中，将含有蚀刻反应种子的处理流体新提供给处理气氛 放置物体以使物体周围的加工流体的密度高于第一步骤S1。

    Method for stripping sacrificial layer in MEMS assembly
    14.
    发明授权
    Method for stripping sacrificial layer in MEMS assembly 有权
    MEMS组装中剥离牺牲层的方法

    公开(公告)号：US06951769B2

    公开(公告)日：2005-10-04

    申请号：US10454198

    申请日：2003-06-04

    Applicant: Joshua Malone

    Inventor： Joshua Malone

    IPC: B81C1/00 ,  G02B26/08 ,  H01L21/00 ,  H01L21/302

    CPC classification number: B81C1/00833 ,  B81B2201/047 ,  B81C1/00317 ,  B81C2201/056 ,  B81C2201/117 ,  B81C2203/0145 ,  G02B26/0833

    Abstract: The present invention provides methods of manufacturing a MEMS assembly. In one embodiment, the method includes mounting a MEMS device, such as a MEMS mirror array, on an assembly substrate, where the MEMS device has a sacrificial layer over components formed therein. The method also includes coupling an assembly lid to the assembly substrate and over the MEMS device to create an interior of the MEMS assembly housing the MEMS device, whereby the coupling maintains an opening to the interior of the MEMS assembly. Furthermore, the method includes removing the sacrificial layer through the opening. A MEMS assembly constructed according to a process of the present invention is also disclosed.

    Abstract translation: 本发明提供了制造MEMS组件的方法。 在一个实施例中，该方法包括将MEMS器件（例如MEMS反射镜阵列）安装在组装衬底上，其中MEMS器件在其中形成的部件上具有牺牲层。 该方法还包括将组装盖耦合到组装衬底和MEMS器件上以形成容纳MEMS器件的MEMS组件的内部，由此耦合保持到MEMS组件的内部的开口。 此外，该方法包括通过开口去除牺牲层。 还公开了根据本发明的方法构造的MEMS组件。

    Vapor phase etching MEMS devices
    15.
    发明申请
    Vapor phase etching MEMS devices 有权
    气相蚀刻MEMS器件

    公开(公告)号：US20040259370A1

    公开(公告)日：2004-12-23

    申请号：US10464597

    申请日：2003-06-18

    Applicant: Semitool, Inc.

    Inventor： Eric J. Bergman

    IPC: H01L021/302 ,  H01L021/461

    CPC classification number: B81C1/0092 ,  B81C1/00928 ,  B81C2201/117 ,  H01L21/6708

    Abstract: An etch release for a MEMS device on a substrate includes etching the substrate with an etchant vapor and a wetting vapor. A thermal bake of the MEMS device, after the etch release may be used to volatilize residues. A supercritical fluid may also be used to remove residual contaminants. The combination of the etchant vapor, such as HF, and the wetting vapor, such as an alcohol vapor, improves the uniformity of the etch undercut on the substrate.

    Abstract translation: 衬底上的MEMS器件的蚀刻释放包括用蚀刻剂蒸气和润湿蒸气蚀刻衬底。 在蚀刻释放之后，MEMS器件的热烘烤可用于挥发残留物。 也可以使用超临界流体来除去残留的污染物。 蚀刻剂蒸气（例如HF）和润湿蒸气（例如醇蒸汽）的组合改善了基板上蚀刻底切的均匀性。

    VERFAHREN ZUR ABSCHEIDUNG EINER ANTI-HAFTUNGSSCHICHT
    17.
    发明公开
    VERFAHREN ZUR ABSCHEIDUNG EINER ANTI-HAFTUNGSSCHICHT 有权
    PROCESS于防责任层的剥离

    公开(公告)号：EP1781566A1

    公开(公告)日：2007-05-09

    申请号：EP05726508.4

    申请日：2005-06-21

    Applicant: ROBERT BOSCH GMBH

    Inventor： LÄRMER, Franz ,  REICHENBACH, Ralf

    IPC: B81B3/00

    CPC classification number: B81C1/0096 ,  B81B3/0005 ,  B81C2201/112 ,  B81C2201/117

    Abstract: The invention relates to a method for depositing a nonstick coating onto the surface of micromechanical structures (5a; 7a) on a substrate (Sub), whereby the material or precursor material to be deposited is supplied to the structures (5a; 7a) in a solvent and transport medium. The solvent and transport medium used is a supercritical CO2 fluid. Deposition of the material or precursor material is brought about by a physical change of state of the CO2 fluid or by a surface reaction between the surface and the precursor material. The inventive method allows to coat the micromechanical structures (5a; 7a) in a cavern (14) or in a cavity after their encapsulation, whereby the material to be deposited is supplied via access channels (15) or perforation holes.

    Method for manufacturing structure, and silicon oxide film etching agent
    20.
    发明专利
    Method for manufacturing structure, and silicon oxide film etching agent 有权
    制造结构的方法和氧化硅膜蚀刻剂

    公开(公告)号：JP2005183749A

    公开(公告)日：2005-07-07

    申请号：JP2003423966

    申请日：2003-12-22

    Applicant: Mitsubishi Gas Chem Co Inc ,  Sony Corp ,  ソニー株式会社 ,  三菱瓦斯化学株式会社

    Inventor： SAGA KOICHIRO ,  WATANABE HIROYA ,  AZUMA TOMOYUKI

    IPC: H01L21/306 ,  B81B3/00 ,  B81C1/00 ,  C09K13/08 ,  H01L21/304 ,  H01L21/308 ,  H01L21/31 ,  H01L29/84

    CPC classification number: B81C1/00849 ,  B81C2201/117

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a structure having a fine microstructure by removing a sacrifice layer composed of a silicon oxide film by a small quantity of a solvent in a short time without damaging the structure having the microstructure. SOLUTION: In the method for manufacturing the structure in which a structure layer formed on a substrate through a gap functions as a minute movable part, the structure manufacturing method comprises a process for successively forming a sacrifice layer composed of a silicon oxide film and the structure layer on the substrate; and a gap forming process for forming the gap between the substrate and the structure layer by etching the sacrifice layer, by a processing fluid to remove the sacrifice layer and the washing the gap and uses a supercritical carbon dioxide fluid containing a fluorine compound; a water soluble organic solvent and water as the processing fluid in the gap forming process, and a silicon oxide film etching agent composed of a mixture of a fluorine compound, the water soluble organic solvent, and water which are used for the structure manufacturing method and added to the supercritical carbon dioxide fluid is used for etching. COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 解决的问题：提供一种通过在短时间内通过少量溶剂除去由氧化硅膜构成的牺牲层而制造具有微细结构的方法，而不损害具有微结构的结构。 解决方案：在通过间隙形成在基板上的结构层用作微小可动部分的结构的制造方法中，结构制造方法包括：连续地形成由氧化硅膜构成的牺牲层的工序 和基板上的结构层; 以及用于通过蚀刻牺牲层，通过处理流体去除牺牲层和清洗间隙并使用含有氟化合物的超临界二氧化碳流体来形成衬底和结构层之间的间隙的间隙形成工艺; 水溶性有机溶剂和水作为间隙形成工序中的加工液，以及由用于结构制造方法的氟化合物，水溶性有机溶剂和水的混合物构成的氧化硅膜蚀刻剂，以及 添加到超临界二氧化碳流体中用于蚀刻。 版权所有（C）2005，JPO＆NCIPI

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