QUANTUM DOT-GLASS COMPOSITE LUMINESCENT MATERIAL AND MANUFACTURING METHOD THEREOF
    11.
    发明公开
    QUANTUM DOT-GLASS COMPOSITE LUMINESCENT MATERIAL AND MANUFACTURING METHOD THEREOF 审中-公开
    LUMINESZENTER QUANTENPUNKTGLASVERBUNDSTOFF UND HERSTELLUNGSVERFAHRENDAFÜR

    公开(公告)号:EP2562146A1

    公开(公告)日:2013-02-27

    申请号:EP10850047.1

    申请日:2010-04-22

    Abstract: A quantum dot-glass composite luminescent material is provided, the base of which is nanometer pore glass. The nanometer pore glass is doped with luminescent quantum dot. A manufacturing method for the luminescent material is also provided, which includes the following steps: step one, preparing an aqueous or organic solution of a single luminescent quantum dot, or a mixed aqueous or organic solution of two or more luminescent quantum dots; step two, immersing the nanometer pore glass in the solution of step one for at least ten minutes; step three, taking the immersed nanometer pore glass out of the solution and drying it in the air, wrapping and packaging the nanometer pore glass with resin, and obtaining the quantum dot-glass composite luminescent material after solidifying it. The composite luminescent material and the manufacturing method thereof are suitable for industrialization and have a broad application in the fields of illumination, LED, display and so on.

    Abstract translation: 提供量子点阵玻璃复合发光材料,其基底为纳米孔玻璃。 纳米孔玻璃掺杂有发光量子点。 还提供了一种发光材料的制造方法,其包括以下步骤:步骤1,制备单个发光量子点的水溶液或有机溶液,或两种或更多种发光量子点的混合水或有机溶液; 第二步,将纳米孔玻璃浸入第一步溶液中至少十分钟; 第三步,将浸没的纳米孔玻璃从溶液中取出并在空气中干燥,用树脂包裹纳米孔玻璃,并在固化后得到量子点阵玻璃复合发光材料。 复合发光材料及其制造方法适用于工业化,并且在照明,LED,显示器等领域具有广泛的应用。

    SOLID ELECTROLYTE FOR RERAM
    12.
    发明公开
    SOLID ELECTROLYTE FOR RERAM 审中-公开
    用于RERAM的固体电解质

    公开(公告)号:EP3208856A1

    公开(公告)日:2017-08-23

    申请号:EP16156125.3

    申请日:2016-02-17

    Abstract: The disclosed composition, particularly suitable for resistance switching memories based on metal ion transport, comprises a matrix material of a metal oxide/sulphide/selenide of at least two metals M1 and M2, and a metal M3 which is mobile in the matrix, wherein
    - the atomic ratio of M1 to M2 is within the range of 75:25 to 99.99:0.01;
    - the valence states of M1, M2 and M3 are all positive;
    - the valence state of M1 is larger than the valence state of M2; and
    - the valence state of M2 is equal to or larger than the valence state of M3.
    Most preferred is amorphous silicon dioxide with M2=Al partially replacing M1=Si atoms, containing M3=Cu. Fabrication and use of said composition, e.g. as sputtering target for physical vapour deposition, are also disclosed.

    Abstract translation: 所公开的组合物,特别适用于基于金属离子传输的电阻切换存储器,包括至少两种金属M1和M2的金属氧化物/硫化物/硒化物基体材料,以及在基体中可移动的金属M3,其中 - M1与M2的原子比在75:25至99.99:0.01的范围内; - M1,M2和M3的价态均为正值; --M1的价态大于M2的价态; 并且--M2的价态等于或大于M3的价态。 最优选的是无定形二氧化硅,其中M2 = Al部分地代替M1 = Si原子,含有M3 = Cu。 所述组合物的制造和使用,例如 作为物理气相沉积的溅射靶,也被公开。

Patent Agency Ranking