METHOD AND APPARATUS FOR DETECTING STRESS IN AN OBJECT
    12.
    发明公开
    METHOD AND APPARATUS FOR DETECTING STRESS IN AN OBJECT 失效
    方法和一种用于在传感器主体紧张局势的检测。

    公开(公告)号:EP0480961A1

    公开(公告)日:1992-04-22

    申请号:EP90909754.0

    申请日:1990-06-26

    Applicant: SIRA LIMITED

    IPC: G01L1

    CPC classification number: G01L1/248

    Abstract: Appareil pour mesurer les contraintes en un point donné d'un objet, comprenant: un dispositif pour appliquer une charge à variation cyclique de période T sur ledit objet; un détecteur qui enregistre et mesure le rayonnement thermique depuis ce point et sur un intervalle-échantillon de temps t, t étant inférieur à T, un moyen qui détermine la phase du premier intervalle t par rapport à la variation cyclique du rayonnement thermique émis par ledit point en réaction à la charge appliquée et qui, à partir des valeurs du rayonnement thermique et de la phase ainsi enregistrées et mesurées, calcule la contrainte en ce point.

    Prism-coupling systems and methods for characterizing ion-exchanged waveguides with large depth-of-layer
    16.
    发明授权
    Prism-coupling systems and methods for characterizing ion-exchanged waveguides with large depth-of-layer 有权
    用于表征具有大深度层的离子交换波导的棱镜耦合系统和方法

    公开(公告)号:US09534981B2

    公开(公告)日:2017-01-03

    申请号:US14966642

    申请日:2015-12-11

    Abstract: Prism-coupling systems and methods for characterizing large depth-of-layer waveguides formed in glass substrates are disclosed. One method includes making a first measurement after a first ion-exchange process that forms a deep region and then performing a second measurement after a second ion-exchange process that forms a shallow region. Light-blocking features are arranged relative to the prism to produce a mode spectrum where the contrast of the mode lines for the strongly coupled low-order modes is improved at the expense of loss of resolution for measuring characteristics of the shallow region. Standard techniques for determining the compressive stress, the depth of layer or the tensile strength of the shallow region are then employed. A second measurement can be made using a near-IR wavelength to measure characteristics of the deeper, first ion-exchange process. Systems and methods of measuring ion-exchanged samples using shape control are also disclosed.

    Abstract translation: 公开了用于表征玻璃基板中形成的大深度深度波导的棱镜耦合系统和方法。 一种方法包括在形成深区域的第一离子交换过程之后进行第一测量,然后在形成浅区域的第二离子交换过程之后进行第二测量。 遮光特征相对于棱镜布置以产生模式光谱,其中以牺牲用于测量浅区域的特性的分辨率损失为代价,强耦合低阶模式的模式线的对比度得到改善。 然后采用用于确定压缩应力,层的深度或浅区域的拉伸强度的标准技术。 可以使用近红外波长进行第二次测量,以测量较深的第一离子交换过程的特性。 还公开了使用形状控制测量离子交换样品的系统和方法。

    Sensor device
    17.
    发明授权
    Sensor device 有权
    传感器装置

    公开(公告)号:US09513178B2

    公开(公告)日:2016-12-06

    申请号:US14358815

    申请日:2012-11-16

    CPC classification number: G01L1/248 G01L1/24 G01L5/166

    Abstract: The invention is a sensor device comprising a carrier element (24), at least one light emitting element (20) arranged on the carrier element (24), at least one light detecting element (22) arranged on the carrier element (24), a cover layer (12) reflecting at least one part of the light emitted by the light emitting element (20) to the at least one light detecting element (22), and at least one transparent filler element (16, 18) filling at least partly the space between the carrier element (24) and the cover layer (12) and being made of a flexible material.

    Abstract translation: 本发明是包括载体元件(24),布置在载体元件(24)上的至少一个发光元件(20)),布置在载体元件(24)上的至少一个光检测元件(22)的传感器装置, 将由所述发光元件(20)发射的光的至少一部分反射到所述至少一个光检测元件(22)的覆盖层(12),以及至少填充至少一个透明填充元件(16,18) 部分地是载体元件(24)和覆盖层(12)之间的空间,并由柔性材料制成。

    Fingernail sensors for measuring finger forces and finger posture
    18.
    发明授权
    Fingernail sensors for measuring finger forces and finger posture 失效
    指甲传感器用于测量手指力和手指姿势

    公开(公告)号:US06388247B2

    公开(公告)日:2002-05-14

    申请号:US09802802

    申请日:2001-03-09

    Abstract: A device for detecting the posture a finger or forces applied to a finger, the finger having a fingernail illuminated by light, comprises at least one photodetector for measuring a change in light reflected by an area of the finger beneath the fingernail in response to the posture of the finger or forces applied to the finger. The photodetector provides a signal corresponding to the change in light reflected. The device also includes a processor for receiving the signal and determining whether the change corresponds to a specified condition. The photodetector may be enclosed in a housing and coupled to the fingernail.

    Abstract translation: 用于检测手指或手指施加的力的装置,所述手指具有由光照亮的指甲,所述手指包括至少一个光电检测器,用于响应于所述姿势来测量由指甲下方的手指区域反射的光的变化 的手指或力施加到手指。 光检测器提供对应于反射光的变化的信号。 该设备还包括一个处理器,用于接收信号并确定该变化是否对应于指定的条件。 光电检测器可以封闭在壳体中并且联接到指甲。

    Finger touch sensors and virtual switch panels
    19.
    发明授权
    Finger touch sensors and virtual switch panels 失效
    手指触摸传感器和虚拟开关面板

    公开(公告)号:US06236037B1

    公开(公告)日:2001-05-22

    申请号:US09253437

    申请日:1999-02-19

    Abstract: A device for detecting contact pressure applied to a finger, the finger having a fingernail illuminated by light, comprises at least one photodetector for measuring a change in light reflected by an area of the finger beneath the fingernail in response to the contact pressure applied to the finger. The photodetector provides a signal corresponding to the change in light reflected. The device also includes a processor for receiving the signal and determining whether the change corresponds to a specified condition. The photodetector may be enclosed in a housing and coupled to the fingernail.

    Abstract translation: 一种用于检测施加到手指的接触压力的装置,所述手指具有由光照亮的指甲,包括至少一个光电检测器,用于响应于施加到所述手指的接触压力来测量由指甲下方的手指的区域反射的光的变化 手指。 光检测器提供对应于反射光的变化的信号。 该设备还包括一个处理器,用于接收信号并确定该变化是否对应于指定的条件。 光电检测器可以封闭在壳体中并且联接到指甲。

    Photoelastic stress sensor
    20.
    发明授权
    Photoelastic stress sensor 失效
    光弹应力传感器

    公开(公告)号:US5728944A

    公开(公告)日:1998-03-17

    申请号:US605291

    申请日:1996-01-17

    CPC classification number: G01L1/248 G01N2203/0641

    Abstract: A stress detection apparatus is provided. A piece of semiconductor grade, ngle crystal silicon mounted on the material is illuminated by an infrared source with radiation having a wavelength in the range of 800-1100 nanometers. An infrared detector monitors the photoelastic effects of illuminating the single crystal silicon with the radiation.

    Abstract translation: 提供一种应力检测装置。 安装在材料上的一片半导体级单晶硅由具有在800-1100纳米范围内的波长的红外源照射。 红外检测器监测用辐射照射单晶硅的光弹效应。

Patent Agency Ranking