公开(公告)号：US3846142A

公开(公告)日：1974-11-05

申请号：US29014672

申请日：1972-09-18

Applicant: BUZHINSKY I ,  ZHABOTINSKY M ,  GAPONTSEV V ,  DAVYDOV B ,  ALEXEEV N ,  SVERCHKOV E ,  RUDNITSKY J ,  KRAVCHENKO V ,  KORYAGINA E ,  IZYNEEV A

Inventor： ZHABOTINSKY M ,  IZYNEEV A ,  KORYAGINA E ,  KRAVCHENKO V ,  RUDNITSKY J ,  SVERCHKOV E ,  ALEXEEV N ,  DAVYDOV B ,  BUZHINSKY I ,  GAPONTSEV V

IPC: C03C3/16 ,  C03C3/17 ,  C03C3/19 ,  C03C3/21 ,  C03C4/00 ,  H01J3/16 ,  H01S3/16 ,  H01S3/17 ,  C03C3/30 ,  C09K1/36

CPC classification number: H01J3/16 ,  C03C3/16 ,  C03C3/17 ,  C03C3/19 ,  C03C3/21 ,  C03C4/0071 ,  H01S3/16 ,  H01S3/17

Abstract: 1. A GLASS FOR LASER USE COMPRISING THE FOLLOWING COMPONENTS, IN PRESENT BY WEIGHT-40-90% OF METAPHOSPHATES SELECTED FROM THE GROUP CONSISTING OF LI, NA, K, ZN, CD, BA, PB, MG, CA, AND SR, 5-50% OF PHOSPHATES OF ELEMENTS SELECTED FROM THE GROUP CONSISTING OF AL, ZR, B, AND CE, 1-7% OF TRIVALENT NEODYMIUM ND3+, AND 0.3-5% OF TRIVALENT YTTERBIUM UB3+, SAID GLASS HAVING A THERMAL EXPANSION COEFFICIENT IN THE RANGE OF 50-160X10**-7 1/DEGREE, A MICROHARDNESS IN THE RANGE OF 300-450 KG./MM,2,A QUANTUM EFFICIENCY OF TRANSMISSION OF ND3+>YB3+HIGHER THAN 0.7, THE SECTION OF STIMULATED EMISSION OF YTTERBIUM AT X=1060 NM. BEING EQUAL TO ABOUT 2.5-5X10**-21 CM.2, AND A MAXIMUM INVERSION AT ELECTRIC ENERGY OF PUMPING OF 80 JOULES/CM.3 IS 1.5 TO 2X10**19 1/CM.2.

公开(公告)号：KR1020130135002A

公开(公告)日：2013-12-10

申请号：KR1020120101618

申请日：2012-09-13

Applicant: 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드

Inventor： 유첸후아 ,  신좌정 ,  린샤이제이 ,  린번정

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F1/20 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3175 ,  H01J37/3177 ,  H01J2237/31774 ,  H01J2237/31789 ,  Y10S430/143 ,  H01L21/0275 ,  B05D5/12 ,  H01J3/16 ,  H01L23/522

Abstract: Described are a device and a method for reflective electron beam lithography. The device includes a substrate, conductive layers which are formed on the substrate, separated by an insulating filler structure, and arranged in parallel, and apertures in each conductive layer. An aperture in one conductive layer is vertically arranged with regard to an aperture in another conductive layer. The peripheral region of each aperture includes a suspended conductive layer. [Reference numerals] (102) Provide a substrate;(104) Deposit a first insulating material on the substrate;(106) Deposit and pattern a photosensitive material on the upper part of the first insulating material;(108) Etch the first insulating material;(110) Deposit a second insulating material;(112) Perform a CMP process;(114) Deposit a conductive material on the second insulating material;(116) Deposit and pattern the photosensitive material on the upper part of the conductive material;(118) Etch the conductive material;(120) Repeat Step 104-Step 118;(122) Etch the second insulating material

Abstract translation: 描述了用于反射电子束光刻的装置和方法。 该器件包括衬底，形成在衬底上的由绝缘填料结构隔开并平行布置的导电层和每个导电层中的孔。 一个导电层中的孔相对于另一导电层中的孔垂直地布置。 每个孔的周边区域包括悬置的导电层。 （102）提供基板;（104）在基板上沉积第一绝缘材料;（106）在第一绝缘材料的上部上沉积和图案感光材料;（108）蚀刻第一绝缘材料 （110）沉积第二绝缘材料;（112）进行CMP工艺;（114）将导电材料沉积在第二绝缘材料上;（116）将感光材料沉积并图案化在导电材料的上部;（ 118）蚀刻导电材料;（120）重复步骤104-步骤118;（122）蚀刻第二绝缘材料