THERMAL RADIATION SENSOR
    11.
    发明申请
    THERMAL RADIATION SENSOR 审中-公开
    热辐射传感器

    公开(公告)号:WO1988007180A1

    公开(公告)日:1988-09-22

    申请号:PCT/DE1988000134

    申请日:1988-03-10

    CPC classification number: G01J5/20

    Abstract: Thermal radiation sensor, provided with two receptor surfaces exposed to the radiation, one (1) of which has a high thermal radiation absorbing capacity, whilst the other (2) has a low thermal radiation absorbing capacity. Both receptor surfaces (1 and 2) consist of an NTC resistor material and compose, together with two temperature-independent cermet resistors (3 and 4), a bridge circuit. In order that the values measured by the sensor may not be affected by the ambiant temperature, the NTC resistors (1 and 2) are provided with heating layers (6 and 7) placed underneath, keeping both NTC resistors at a constant temperature. Insulating layer s (8 and 9) are disposed between the NTC resistors (1 and 2) and the heating layers (6 and 7). Said heating layers (6 and 7) consist of a thick layer of cermet with platinum, or of a thick layer of platinum, and are in the form of a meander. The insulating layers (8 and 9) are preferably of a crystallizing glass.

    Abstract translation: 热辐射传感器具有暴露于辐射的两个受体表面,其中一个(1)具有高的热辐射吸收能力,另一个(2)具有较低的热辐射吸收能力。 两个受体表面(1和2)由NTC电阻材料组成,并与两个独立于温度的金属陶瓷电阻(3和4),桥接电路组成。 为了使传感器测量的值不受环境温度的影响,NTC电阻器(1和2)上设置有放置在下面的加热层(6和7),使两个NTC电阻都保持在恒定温度。 绝缘层s(8和9)设置在NTC电阻器(1和2)和加热层(6和7)之间。 所述加热层(6和7)由厚铂金属层或铂层组成,并且呈曲折形式。 绝缘层(8和9)优选为结晶玻璃。

    UNCOOLED BACKGROUND LIMITED DETECTOR AND METHOD
    12.
    发明申请
    UNCOOLED BACKGROUND LIMITED DETECTOR AND METHOD 审中-公开
    未知的背景技术有限的检测器和方法

    公开(公告)号:WO1998003843A1

    公开(公告)日:1998-01-29

    申请号:PCT/US1997012515

    申请日:1997-07-17

    CPC classification number: G01J5/24 G01J1/46 G01J5/20 G01J5/34 G01J5/38 H04N5/33

    Abstract: A detector (100) for detecting radiant energy includes at least one detecting element (1) and a detector readout element (20, 30, 18). The at least one detecting element (1) substantially absorbs the radiant energy and exhibits a structural change in response thereto. The detector readout element (20, 30, 18), positioned in non-contacting proximity to the at least one detecting element (1), is responsive to the structural change of the at least one detecting element (1). The non-contacting detector readout element (20, 30, 18) provides an indication signal corresponding to the structural change, whereby the corresponding indication signal is representative of the radiant energy detected by the at least one detecting element.

    Abstract translation: 用于检测辐射能的检测器(100)包括至少一个检测元件(1)和检测器读出元件(20,30,18)。 所述至少一个检测元件(1)基本上吸收辐射能并显示响应于此的结构变化。 位于与所述至少一个检测元件(1)非接触接近的检测器读出元件(20,30,18)响应于所述至少一个检测元件(1)的结构变化。 非接触检测器读出元件(20,30,18)提供对应于结构变化的指示信号,由此相应的指示信号表示由至少一个检测元件检测到的辐射能。

    BOLOMETRIC THERMAL DETECTOR
    13.
    发明申请
    BOLOMETRIC THERMAL DETECTOR 审中-公开
    BOMOMETRIC热探测器

    公开(公告)号:WO1994024531A1

    公开(公告)日:1994-10-27

    申请号:PCT/FR1994000401

    申请日:1994-04-11

    Inventor: THOMSON-CSF

    CPC classification number: G01J5/20

    Abstract: Thermal detector comprising a heat-sensitive material characterized in that the latter comprises a doped ferroelectric material whose resistance increases considerably with temperature, in the region of the ferroelectric/paraelectric transition. In particular, the material can be a doped ferroelectric ceramic comprising barium titanate. Applications as infrared detectors.

    Abstract translation: 热探测器包括一种热敏材料,其特征在于后者包括掺杂的铁电材料,其在铁电/顺电转变区域中的电阻随温度显着增加。 特别地,该材料可以是包含钛酸钡的掺杂铁电陶瓷。 应用为红外探测器。

    SEMICONDUCTOR FILM BOLOMETER THERMAL INFRARED DETECTOR

    公开(公告)号:WO1991016607A1

    公开(公告)日:1991-10-31

    申请号:PCT/AU1991000162

    申请日:1991-04-24

    CPC classification number: G01J5/20 G01J2005/204

    Abstract: A thermal infrared detector comprising a dielectric pellicle (5) suspended over a cavity in a substrate (6), the pellicle supporting a detector element (1) comprising a heat sensitive semiconductor layer (3) between a pair of thin film metallic contacts (2, 4), these being deposited on the pellicle, the cavity being formed by etching and removal of the substrate material through holes or slots (8) in the surface of the substrate.

    Abstract translation: 一种热红外检测器,包括悬挂在衬底(6)中的空腔上的介电防护薄膜(5),所述防护薄膜组件支撑检测器元件(1),其包括在一对薄膜金属触点(2)之间的热敏半导体层(3) ,4),它们被沉积在防护薄膜组件上,通过蚀刻和去除衬底材料而形成的腔体通过衬底表面中的孔或槽(8)形成。

    INFRARED RADIATION DETECTOR
    17.
    发明申请
    INFRARED RADIATION DETECTOR 审中-公开
    红外辐射探测器

    公开(公告)号:WO1982001066A1

    公开(公告)日:1982-04-01

    申请号:PCT/AU1981000130

    申请日:1981-09-17

    CPC classification number: H01L37/02 G01J5/20

    Abstract: Dans un detecteur de radiation infrarouge un substrat stable (5) possede un orifice (10) traversant le substrat et une paire de tampons de liaison (9) sur les deux cotes opposes de l'orifice, ce dernier etant recouvert d'une pellicule (6) d'un materiau isolant ou semi-conducteur qui supporte sur l'orifice un element detecteur (7) comprenant un film ultrafin d'absorption des infrarouges en nickel, palladium, platine ou irridium inferieur a 10 nm d'epaisseur ou un film en or inferieur a 20 nm d'epaisseur, les deux cotes de l'element detecteur etant connectes aux patins de liaison (9) par des contacts du film fin (8).

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