公开(公告)号：EP0025529A3

公开(公告)日：1981-12-16

申请号：EP80105109

申请日：1980-08-28

Applicant: Battelle-Institut e.V.

Inventor： Hartmann, Rolf ,  Krah, Albrecht ,  Egle, Hilda

IPC: G01J05/20 ,  H01C07/00 ,  H01C17/06

CPC classification number: G01J5/20

公开(公告)号：EP0149819A3

公开(公告)日：1986-07-16

申请号：EP84115783

申请日：1984-12-19

Applicant: Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.

Inventor： Betzler, Peter, Dipl.-Ing. ,  Mast, Karl-Friedrich, Dr.-Phys. ,  Müller, Reinhold, Dr.

IPC: G01J05/20

CPC classification number: G01J5/20 ,  G01J2005/202 ,  G01J2005/206

公开(公告)号：WO1987002456A1

公开(公告)日：1987-04-23

申请号：PCT/DE1986000402

申请日：1986-10-03

Applicant: ROBERT BOSCH GMBH ,  FEDTER, Horst ,  GRÜNWALD, Werner ,  NOLTING, Peter ,  DE LA PRIETA, Claudio ,  SCHMID, Kurt

Inventor： ROBERT BOSCH GMBH

IPC: G01J05/20

CPC classification number: G01J5/20

Abstract: Thermal radiation sensor provided with two receiver surfaces exposed to the radiation, of which one (1) has a high absorbing capacity in respect of thermal radiation owing to its black colour, and the other (2) has a low absorbing capacity because of a covering which reflects the thermal radiation. These two receiver surfaces (1 and 2) consist of a NTC resistive material and are, together with two temperature-independent cermet resistors (3 and 4) incorporated in a brigde-circuit. The four resistors (1-4) are applied to a ceramic substrate (5) and connected with strip conductors (6) which in turn terminate at the four necessary connections (7-10). The ceramic substrate (5) is fixed in a frame, which carries a cover (12) that is substantially permeable to thermal radiation, which for its part carries, as far as a window (13) over one of the two NTC resistors, a layer (14) of a material which substantially reflects the thermal radiation.

Abstract translation: 热辐射传感器具有暴露于辐射的两个接收器表面，其中一个（1）由于其黑色而具有相对于热辐射的高吸收能力，另一个（2）由于覆盖而具有低的吸收能力 这反映了热辐射。 这两个接收器表面（1和2）由NTC电阻材料组成，并且与两个温度无关的金属陶瓷电阻器（3和4）一起并入布拉格电路中。 四个电阻器（1-4）被施加到陶瓷基板（5）上，并与带状导体（6）连接，导体（6）又终止于四个必要的连接（7-10）。 陶瓷基板（5）固定在框架中，该框架承载对于其部分承载的基本上可透过热辐射的盖（12），直到两个NTC电阻之一上的窗口（13），一个 层（14），其基本上反映热辐射。

公开(公告)号：WO1995014218A1

公开(公告)日：1995-05-26

申请号：PCT/US1994013002

申请日：1994-11-14

Applicant: HONEYWELL INC.

Inventor： HONEYWELL INC. ,  WOOD, Roland, Andrew ,  HIGASHI, Robert, E. ,  RHODES, Michael, Lee

IPC: G01J05/20

CPC classification number: H01L27/16

Abstract: An infrared imaging array of thermoelectric sensors has a plurality of electrically connected microbridge subsensors arranged in subarrays comprising each sensor of the array. Each subsensor consists of a short span microbridge lying across a relatively small pit. The use of many of such subsensors for each sensor rather than a single large area microbridge sensor for a single pixel allows each pixel to be made large enough to give good sensitivity in either vacuum- or gas-filled designs, and at the same time avoid the reduced fabrication yield which results when sensors span large pits.

Abstract translation: 热电传感器的红外成像阵列具有布置在包括阵列的每个传感器的子阵列中的多个电连接的微桥子载体。 每个子传感器由跨越较小坑的短跨度微桥组成。 对于每个传感器而言，对于每个传感器而不是单个大面积微桥传感器使用许多这样的子传感器，允许每个像素被制造得足够大以在真空或气体填充的设计中提供良好的灵敏度，并且同时避免 当传感器跨越大坑时，减小的制造产量。

公开(公告)号：WO1994001743A1

公开(公告)日：1994-01-20

申请号：PCT/US1992005699

申请日：1992-07-08

Applicant: HONEYWELL INC.

Inventor： HONEYWELL INC. ,  COLE, Barrett, E.

IPC: G01J05/20

CPC classification number: C12P7/62 ,  G01J5/20

Abstract: A microstructure design for high IR sensitivity having a two level infrared bolometer microstructure, the lower level having a reflective metal film surface such as Pt, Au, or Al to reflect IR penetrating to that level, the upper level being separated from the lower level by an air gap of about 1-2 microns which allows the reflected IR to interfere with the incident IR and increase the sensitivity to a higher level.

Abstract translation: 具有二级红外测辐射热计微观结构的高红外灵敏度的微结构设计，较低的层具有诸如Pt，Au或Al的反射金属膜表面以反射IR穿透到该水平，上层与下层分离， 约1-2微米的气隙，允许反射的IR干扰入射的IR，并将灵敏度提高到更高的水平。

公开(公告)号：WO1998011411A1

公开(公告)日：1998-03-19

申请号：PCT/CA1997000583

申请日：1997-08-15

Applicant: INSTITUT NATIONAL D'OPTIQUE

Inventor： INSTITUT NATIONAL D'OPTIQUE ,  JEROMINEK, Hubert ,  RENAUD, Martin ,  SWART, Nicholas, R.

IPC: G01J05/20

CPC classification number: H01L31/035281 ,  G01J5/20 ,  H01L31/02327 ,  Y02E10/50

Abstract: The microbridge structure is for emitting or detecting radiations. According to one embodiment, it comprises a substrate layer (1) provided with two first electrical contacts (2) and a microstructure (22) provided with two second electrical contacts (16) and having an underside, a top side opposite to the underside (13), through which radiations are emitted or received, at least one radiation active layer (9) lying between the underside (13) and the top side (12), the radiation active layer (9) having two distal points connected respectively to the two second electrical contacts (16) of the microstructure, and a radiation reflective layer (6) lying between the underside (13) and the radiation active layer (9). It also comprises a micro support (24) for suspending the microstructure over and at a predetermined distance from the substrate layer (1) with the underside (13) of the microstructure facing the substrate layer. The micro support is provided with at least two electrically conductive paths for connecting respectively the two first electrical contacts (2) to two second electrical contacts (16). The present invention is also concerned with methods for forming microbridge structures.

Abstract translation: 微桥结构用于发射或检测辐射。 根据一个实施例，其包括设置有两个第一电触点（2）的基底层（1）和设置有两个第二电触点（16）并具有下侧的微结构（22），与下侧相对的顶侧 13），发射或接收辐射的至少一个辐射活性层（9）位于下侧（13）和顶侧（12）之间，辐射活性层（9）具有两个远端点分别连接到 微结构的两个第二电触头（16）和位于下侧（13）和辐射活性层（9）之间的辐射反射层（6）。 它还包括微型支撑件（24），用于将微结构悬置在与衬底层（1）相隔预定距离处，微结构的下侧（13）面向衬底层。 微型支撑件设置有至少两个用于将两个第一电触头（2）连接到两个第二电触头（16）的导电路径。 本发明还涉及形成微桥结构的方法。

公开(公告)号：WO1997024589A1

公开(公告)日：1997-07-10

申请号：PCT/US1996019804

申请日：1996-12-13

Applicant: HONEYWELL INC.

Inventor： HONEYWELL INC. ,  KRAFTHEFER, Brian, C. ,  RHODES, Michael, L. ,  STRATTON, Thomas, G.

IPC: G01J05/20

CPC classification number: G01J1/4228 ,  G01J1/02 ,  G01J1/0252 ,  G01J1/04 ,  G01J1/0407 ,  G01J5/04 ,  G01J5/045 ,  G01J5/08 ,  G01J5/0875 ,  G01J5/20 ,  G08B13/19 ,  Y10S250/01

Abstract: An occupancy sensor (50) having a primary infrared radiation sensor (12) and a secondary infrared radiation sensor (14) in an integrated vacuum package having a window (52) that provides separate fields of view to the sensors, respectively. The primary sensor is for monitoring occupancy of a selected space. The secondary sensor is for monitoring the background radiation of the space. Signals from the primary and secondary sensors are electronically processed and compared, and the occupancy level of the selected space is determined. Temperature and visible light sensors may also be incorporated. Sensor information is used to control temperature, ventilation, lighting and other parameters of the selected space.

Abstract translation: 一种占空传感器（50），其具有一个集成的真空包装中的初级红外辐射传感器（12）和二次红外线辐射传感器（14），该真空包装具有分别向传感器提供分离的视野的窗口（52）。 主传感器用于监视所选空间的占用。 二次传感器用于监测空间的背景辐射。 来自主要和次要传感器的信号被电子处理和比较，并确定所选择的空间的占用水平。 还可以并入温度和可见光传感器。 传感器信息用于控制所选空间的温度，通风，照明等参数。

公开(公告)号：WO1994018531A1

公开(公告)日：1994-08-18

申请号：PCT/GB1994000263

申请日：1994-02-10

Applicant: EA TECHNOLOGY LIMITED ,  DEXTER, Amos, Christopher ,  EARP, Graham, Keith

Inventor： EA TECHNOLOGY LIMITED

IPC: G01J05/20

CPC classification number: G01J5/12 ,  G01J2005/066 ,  G01J2005/126 ,  G01K17/20

Abstract: Apparatus (110) for determining the quantity of an incident flux of electromagnetic radiation comprising first and second bodies (118, 120) having different coefficients of interaction with the incident radiation, means to monitor the temperatures of said bodies (118, 120), heating means associated with at least one of said bodies (118, 120), control means (114) responsive to the monitored temperatures to control said heating means so as to minimise temperature differences therebetween and to provide a signal representative of the power delivered to the heating means and computing means (114) responsive to said power signal to compute a value for the quantity of the flux of electromagnetic radiation incident upon the bodies (118, 120). Method of determining the quantity of an incident flux of electromagnetic radiation providing first and second bodies (118, 120) having different coefficients of interaction with the incident radiation, exposing said bodies to the incident flux of electromagnetic radiation, measuring their temperatures, heating the colder of said two bodies (118, 120) so as to minimise any temperature difference therebetween, measuring the quantity of power necessary to so heat the colder of said two bodies, and calculating a value for the quantity of the flux of electromagnetic radiation incident upon the bodies (118, 120) on the basis of said measured values.

Abstract translation: 用于确定包括具有与入射辐射的不同相互作用系数的第一和第二主体（118,120）的电磁辐射的入射磁通量的装置（110），用于监视所述主体（118,120）的温度，加热 与所述主体（118,120）中的至少一个相关联的装置，响应于所监视的温度的控制装置（114）来控制所述加热装置，以便最小化它们之间的温度差并提供代表传递给加热器的功率的信号 响应于所述功率信号的装置和计算装置（114）来计算入射到所述主体（118,120）上的电磁辐射的通量的数值。 确定提供具有与入射辐射不同的相互作用系数的第一和第二主体（118,120）的电磁辐射的入射通量的量的方法，将所述体暴露于入射的电磁辐射通量，测量其温度，加热较冷 的所述两个体（118,120），以便最小化它们之间的任何温度差，测量所述两个体的较冷的所述加热所需的功率量，以及计算入射到所述两个体的电磁辐射的通量的值 （118,120）。

公开(公告)号：WO1997025600A1

公开(公告)日：1997-07-17

申请号：PCT/SE1997000025

申请日：1997-01-10

Applicant: IMC INDUSTRIELLT MIKROELEKTRONIKCENTRUM AB ,  ANDERSSON, Jan

Inventor： IMC INDUSTRIELLT MIKROELEKTRONIKCENTRUM AB

IPC: G01J05/20

CPC classification number: H01L27/16 ,  G01J5/20 ,  G01K7/01 ,  G01K7/22

Abstract: A structure for temperature sensors and infrared detectors built-up on a substrate including a thermistor layer whose resistance is temperature dependent, and further including an electric contact layer on both sides of the thermistor layer, wherein the resistance is intended to be measured between the contact layers. The thermistor layer is comprised of a monocrystalline quantum well structure (3) which includes alternating quantum well layers and barrier layers. One or more of the parameters: band-edge energy of the barrier layers, quantum well layer doping level, quantum well layer thickness and barrier layer thickness is/are adapted to obtain a temperature coefficient predetermined for the structure.

Abstract translation: 一种用于温度传感器和红外检测器的结构，其包括在基板上，该基板包括电阻为温度依赖性的热敏电阻层，并且还包括位于热敏电阻层两侧的电接触层，其中该电阻旨在在接触 层。 热敏电阻层由单晶量子阱结构（3）组成，其包括交替的量子阱层和阻挡层。 一个或多个参数：阻挡层的带边能量，量子阱层掺杂水平，量子阱层厚度和阻挡层厚度适于获得为该结构预定的温度系数。

公开(公告)号：WO1996022513A1

公开(公告)日：1996-07-25

申请号：PCT/US1996000760

申请日：1996-01-17

Applicant: FLIR SYSTEMS, INC.

Inventor： FLIR SYSTEMS, INC. ,  GATES, James, L.

IPC: G01J05/20

CPC classification number: H01L27/14649 ,  G01J5/20 ,  H04N5/33

Abstract: A micro-bolometric infrared (IR) staring array (10) is described. The active element (12, 14, 16, 18) in each pixel within a two-dimensional array (10) is a device having a selectively forward-biased p-n junction, e.g. a selectively biased diode (12, 14, 16, 18). Each diode (12, 14, 16, 18) in the array (10) serves as both an IR energy detecting element and a switching element. Each diode (12 14, 16, 18) in a given row (20a, 20b) of the IR pixel array(10) to be sensed, or read, is driven at a constant voltage, rendering its IR response highly controllable in the forward biased operating curve of the diodes (12, 14, 16, 18) in the addressed row (20a, 20b). Diodes (12 14, 16, 18) not being driven are, due to their reverse bias, in their off state producing minute leakage current and thus make no significant contribution to the sensed current representing a given pixel's IR exposure. The row-addressed driven or active diodes (12, 14, 16, 18) are sensed column by column (22a, 22b) by sample and hold techniques to produce a two-dimensional IR pixel image of a target. This simplifies the geometries as well as the cell stuctures while increasing the fill ratio to greater than approximately fifty percent.

Abstract translation: 描述了微辐射红外（IR）凝视阵列（10）。 二维阵列（10）内的每个像素中的有源元件（12,14,16,18）是具有选择性地正向偏置的p-n结的器件，例如， 选择性偏置二极管（12,14,16,18）。 阵列（10）中的每个二极管（12,14,16,18）都用作IR能量检测元件和开关元件。 要感测或读取的IR像素阵列（10）的给定行（20a，20b）中的每个二极管（12,14,16,18）以恒定电压被驱动，使得其IR响应在前向中高度可控 位于寻址行（20a，20b）中的二极管（12,14,16,18）的偏置工作曲线。 未被驱动的二极管（12,14,16,18）由于其反向偏压而处于截止状态，产生微小的漏电流，因此对表示给定像素的IR曝光的感测电流没有显着贡献。 通过采样和保持技术逐列（22a，22b）感测行寻址的驱动或有源二极管（12,14,16,18）以产生目标的二维IR像素图像。 这简化了几何形状和细胞结构，同时将填充率提高到大约百分之五十。