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    Planar oscillator having a dielectric cavity and operative under microwave frequencies
    12.
    发明公开
    Planar oscillator having a dielectric cavity and operative under microwave frequencies 失效
    平面振荡器具有电介质孔径和微波频率下的操作

    公开(公告)号：EP0069431A3

    公开(公告)日：1983-11-23

    申请号：EP82200831

    申请日：1982-07-03

    Applicant: CISE- Centro Informazioni Studi Esperienze S.p.A.

    Inventor： Bastida, Ezio Maria ,  Bergamini, Paolo

    IPC: H01P07/10 ,  H03B05/18

    CPC classification number: H01P7/10 ,  H03B5/1852 ,  H03B5/1876 ,  H03B2200/0028

    Abstract: This invention relates to a planar oscillator (9, 109) having a dielectric cavity (25, 125) and which is operative under microwave frequencies, said oscillator consisting of a dielectric material base (10, 110) one surface of which has, superposed thereto, a continuous layer (11, 111) of a conductive material which coats portions of said face; the remaining portions (10A, 10B, 110A', 110A", 110B) of the surface have, superposed thereto, strips of a conductive material (12, 13, 14, 112, 113, 114) which are separate from each other and are electrically connected to an active element (19,119), a dielectric cavity (25, 125) adhering to the surface away of the dielectric material base (10, 110), the layer of conductive material (11, 111) providing a grounding plane and the strips of conductive material (12, 13, 14, 112, 113, 114) providing transmission and output lines for the oscillator concerned.

    PULSE AMPLIFICATION APPARATUS AND METHOD
    14.
    发明申请
    PULSE AMPLIFICATION APPARATUS AND METHOD 审中-公开
    脉冲放大装置和方法

    公开(公告)号：WO1998029940A1

    公开(公告)日：1998-07-09

    申请号：PCT/US1997023566

    申请日：1997-12-29

    Applicant: MILLITECH CORPORATION

    Inventor： MILLITECH CORPORATION ,  SIMONUTTI, Mario, D.

    IPC: H03B05/18

    CPC classification number: H03F3/608 ,  H03F2200/198

    Abstract: An electromagnetic radiation reflection amplifier capable of amplifying cw or pulsed signals has a pair of cw oscillators (20, 22) operated under injection locking conditions. Diversion of oscillator power to a separate signal path during the off time of the input pulse is achieved through purely passive means; no active control devices are utilized. The device can be implemented for amplification of microwave, millimeter wave or optical signals. The amplifier comprises a 180 DEG hybrid coupler (10), a matched pair of cw oscillator modules (20, 22), a waveguide discontinuity (36), a waveguide termination (26), and an optional signal input element. For a magic-tee hybrid coupler, the cw oscillator modules are mounted on the ports of the symmetrically positioned waveguide arms (16, 17) and the waveguide discontinuity (36) is located within either the sum arm or difference waveguide arm intermediate its ends. The waveguide termination is located at the port (14) of that arm, and the port (11) of the other non-symmetric arm of the magic-tee becomes the input/output port.

    Abstract translation: 能够放大cw或脉冲信号的电磁辐射反射放大器具有在注射锁定条件下操作的一对cw振荡器（20,22）。 在输入脉冲的关闭时间内将振荡器功率转移到单独的信号路径通过纯粹的无源装置实现; 没有使用主动控制装置。 该器件可以实现微波，毫米波或光信号的放大。 放大器包括180°混合耦合器（10），匹配的一对cw振荡器模块（20,22），波导不连续（36），波导终端（26）和可选的信号输入元件。 对于魔术三通混合耦合器，cw振荡器模块安装在对称定位的波导臂（16,17）的端口上，并且波导不连续（36）位于和臂或差分波导臂中间的末端。 波导终端位于该臂的端口（14）处，并且魔术T的另一非对称臂的端口（11）变为输入/输出端口。

    DIELECTRIC RESONATOR
    15.
    发明申请
    DIELECTRIC RESONATOR 审中-公开
    电介质谐振器

    公开(公告)号：WO1997019512A1

    公开(公告)日：1997-05-29

    申请号：PCT/GB1996002806

    申请日：1996-11-18

    Applicant: PYRONIX LIMITED ,  KONSTANDELOS, John

    Inventor： PYRONIX LIMITED

    IPC: H03B05/18

    CPC classification number: H03B5/1876 ,  H03B2201/017

    Abstract: A circuit comprising a dielectric resonator wherein the dielectric resonator is positioned within a chamber, the chamber being formed by a housing with a wall having selectable or predeterminable electromagnetic characteristics, and wherein the position of the dielectric resonator relative to the wall or walls, and the dimensions of the chamber, providing a controlled, and preferably uniform electrical and magnetic fied environment for the dielectric resonator.

    Abstract translation: 一种包括介质谐振器的电路，其中所述介质谐振器位于腔室内，所述腔室由具有可选择或可预定电磁特性的壁的壳体形成，并且其中介质谐振器相对于壁或壁的位置以及 提供腔室的尺寸，为介质谐振器提供受控的，优选均匀的电磁环境。

    LOCAL OSCILLATOR NOISE REJECTION CIRCUIT
    16.
    发明申请
    LOCAL OSCILLATOR NOISE REJECTION CIRCUIT 审中-公开
    本地振荡器噪声抑制电路

    公开(公告)号：WO1996037041A1

    公开(公告)日：1996-11-21

    申请号：PCT/GB1996001188

    申请日：1996-05-17

    Applicant: CAMBRIDGE INDUSTRIES LIMITED ,  ORR, John, Peter

    Inventor： CAMBRIDGE INDUSTRIES LIMITED

    IPC: H03B05/18

    CPC classification number: H03B5/1876

    Abstract: A local oscillator noise rejection circuit is described which has a resistance between the output of an MES FET/HEMT and ground. This resistance has the effect of introducing a self-biasing arrangement to the oscillator circuit which means that when there is any increase in current through the MES FET/HEMT device, the voltage drop across the resistance also increases. Since the gate is tied to ground via a low resistance (51 OMEGA ) this leads to an increased negative gate to source voltage which causes the device to "pinch-off" slightly which, in turn, gives a reduction in the current level through the device. This arrangement therefore has the effect of reducing any current surges within the device and produces an improvement in phase noise. In a preferred arrangement a 30 Ohm resistor is located between the source of the FET/HEMT and ground, the resistor being located in series within the printed circuit inductor and the output line. With the aforementioned modified circuit, an improvement in the phase noise performance has been measured from the standard circuit which gave a figure of -64 dBc. at 10 KHz. After modification using the above mentioned circuit a figure of -76 dBc. at 10 KHz. was obtained which is approximately a 16 times improvement.

    Abstract translation: 描述了本地振荡器噪声抑制电路，其在MES FET / HEMT的输出与地之间具有电阻。 该电阻具有将自偏压装置引入振荡器电路的作用，这意味着当通过MES FET / HEMT器件的电流有任何增加时，电阻上的电压降也增加。 由于门通过低电阻（51欧姆）连接到地，这导致增加的负栅极到源极电压，这导致器件稍微“夹断”，这又导致通过电流的电流降低 设备。 因此，这种布置具有减小装置内的任何电流浪涌并产生相位噪声的改善的效果。 在优选的布置中，30欧姆电阻器位于FET / HEMT的源极和地之间，电阻器位于印刷电路电感器和输出线内。 利用上述改进的电路，已经从标准电路测得了相位噪声性能的改善，该标准电路为-64dBc。 在10KHz。 使用上述电路进行修改后，数字为-76 dBc。 在10KHz。 获得了大约16倍的改善。

    SELF-SHIELDING MICROSTRIP ASSEMBLY
    17.
    发明申请
    SELF-SHIELDING MICROSTRIP ASSEMBLY 审中-公开
    自屏蔽显微镜组件

    公开(公告)号：WO1994026023A1

    公开(公告)日：1994-11-10

    申请号：PCT/US1994004700

    申请日：1994-04-28

    Applicant: MOTOROLA INC.

    Inventor： MOTOROLA INC. ,  WINGFIELD, William, J. ,  CRANDALL, Mark, A. ,  OOI, Leng, H.

    IPC: H03B05/18

    CPC classification number: H01P3/081 ,  H03B5/1203 ,  H03B5/1231 ,  H03B5/1243 ,  H03B5/1847 ,  H03B2201/0208 ,  H03B2201/036 ,  H03B2202/084 ,  H05K1/0218 ,  H05K1/0237 ,  H05K3/3431

    Abstract: A shielded microstrip assembly (100) includes a substrate (102) having a first ground plane surface (106) and a second surface (206) which includes a transmission line (216). A plurality of solder balls (104) provide electrical interconnection for the ground plane and for the terminals (210) and (212) of transmission line (216). The microstrip assembly (100) is then inverted and attached using solder balls (104) to a carrier (302). The inverted microstrip assembly (100) of the present invention provides for improved shielding, while maintaining the high Q and other advantages associated with a microstrip.

    Abstract translation: 屏蔽微带组件（100）包括具有第一接地平面表面（106）和包括传输线（216）的第二表面（206）的衬底（102）。 多个焊球（104）为接地平面和传输线（216）的端子（210）和（212）提供电互连。 然后将微带组件（100）反转并使用焊球（104）附接到载体（302）。 本发明的倒置微带组件（100）提供了改进的屏蔽，同时保持与微带相关的高Q和其它优点。

    1.6 TO 3 GHz OSCILLATOR
    18.
    发明申请
    1.6 TO 3 GHz OSCILLATOR 审中-公开
    振荡器到3 GHz 1.6的速度

    公开(公告)号：WO1993020615A1

    公开(公告)日：1993-10-14

    申请号：PCT/AT1993000033

    申请日：1993-03-02

    Applicant: SIEMENS AKTIENGESELLSCHAFT ÖSTERREICH ,  VEITH, Peter, Ernst ,  GILA, Janos

    Inventor： SIEMENS AKTIENGESELLSCHAFT ÖSTERREICH

    IPC: H03B05/18

    CPC classification number: H03B5/1847 ,  H03B2200/0034 ,  H03B2200/004 ,  H05K1/0237 ,  H05K1/181

    Abstract: The invention concerns a 1.6 to 3 GHz oscillator with a voltage-controlled resonator unit (10) in an oscillator stage (20) plus a series-connected buffer stage (30). This oscillator is designed with an open microstrip resonator (S1) which is shorter than lambda/4 in combination with an open feedback-type microstrip (S2) in the emitter branch of a common collector configuration in a non-overdriven oscillator transistor (T1). The resonator (S1) is coupled in particular with parasitic resonant circuits by a variable-capacitance diode (D1). A particularly simple and robust circuit with high output power can thus be designed for this difficult frequency range. A circuit can be built using SMD techniques to fit in a standard chassis without the need for any special adjustment measures, in particular in volume manufacture.

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