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    Method for anisotropic etching of silicon
    191.
    发明授权
    Method for anisotropic etching of silicon 有权
    硅各向异性蚀刻方法

    公开(公告)号：US06284148B1

    公开(公告)日：2001-09-04

    申请号：US09284914

    申请日：1999-07-16

    Applicant: Franz Laermer ,  Andrea Schilp

    Inventor： Franz Laermer ,  Andrea Schilp

    IPC: B44C122

    CPC classification number: B81C1/00619 ,  B81C2201/0112 ,  H01L21/30655

    Abstract: A method is proposed for anisotropic etching of micro- and nanofeatures in silicon substrates using independently controlled etching steps and polymer deposition steps which succeed one another alternatingly, the quantity of polymer deposited decreasing in the course of the polymer deposition steps, thus preventing any underetching of the micro- and nanofeatures.

    Abstract translation: 提出了一种使用独立控制的蚀刻步骤和聚合物沉积步骤在硅衬底中进行各向异性蚀刻的方法，所述沉积步骤交替地彼此成功，聚合物沉积步骤中沉积的聚合物的量减少，从而防止任何不均匀的 微观和纳米特性。

    Method for manufacturing semiconductor device
    192.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US06277756B1

    公开(公告)日：2001-08-21

    申请号：US09501762

    申请日：2000-02-10

    Applicant: Junji Ohara ,  Shinji Yoshihara ,  Kazuhiko Kano ,  Nobuyuki Ohya

    Inventor： Junji Ohara ,  Shinji Yoshihara ,  Kazuhiko Kano ,  Nobuyuki Ohya

    IPC: H01L21311

    CPC classification number: G01P15/0802 ,  B81B2203/033 ,  B81C1/00619 ,  B81C2201/0112 ,  H01L21/30655 ,  H01L21/762

    Abstract: A method of manufacturing a semiconductor device, which can effectively form a trench having a high aspect ratio with relatively simple steps. An initial trench is formed in a silicon substrate by a reactive ion etching using an oxide film mask as an etching mask. After forming a protection oxide film on an inside surface of the trench, a part of the protection oxide film at which positions at a bottom surface of the trench is removed by a reactive ion etching, so that an etching of the silicon substrate is advanced through the bottom surface of the trench. Furthermore, the step for forming the protection oxide film and the step for re-etching the bottom surface of the trench are repeatedly performed, so that a depth of the trench becomes a predetermined depth. These steps are performed in a common chamber by using plasma processed with switching gases to be introduced to the chamber.

    Abstract translation: 一种制造半导体器件的方法，其可以通过相对简单的步骤有效地形成具有高纵横比的沟槽。 通过使用氧化物膜掩模作为蚀刻掩模的反应离子蚀刻在硅衬底中形成初始沟槽。 在沟槽的内表面上形成保护氧化膜之后，通过反应离子蚀刻去除沟槽底面的位置的保护氧化膜的一部分，使得硅衬底的蚀刻通过 沟槽的底面。 此外，重复执行用于形成保护氧化膜的步骤和重新蚀刻沟槽的底表面的步骤，使得沟槽的深度变为预定深度。 这些步骤通过使用等离子体处理的切换气体被引入腔室在公共室中进行。

    Process for anisotropic plasma etching of different substrates
    193.
    发明授权
    Process for anisotropic plasma etching of different substrates 有权
    不同基板的各向异性等离子体蚀刻工艺

    公开(公告)号：US6127273A

    公开(公告)日：2000-10-03

    申请号：US91031

    申请日：1998-09-28

    Applicant: Franz Laermer ,  Andrea Schilp

    Inventor： Franz Laermer ,  Andrea Schilp

    IPC: B81C1/00 ,  C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/321 ,  H01L21/465 ,  H01L21/00

    CPC classification number: H01L21/465 ,  B81C1/00619 ,  C23F4/00 ,  H01L21/30655 ,  B81C2201/0112

    Abstract: A method of producing etched structures in substrates by anisotropic plasma etching, wherein an essentially isotropic etching operation and side wall passivation are performed separately and in alternation, with the substrate being a polymer, a metal or a multicomponent system, and portions of the side wall passivation layer applied during passivation of the side wall are transferred to the exposed side surfaces of the side wall during the subsequent etching operations, so the entire method is anisotropic as a whole.

    Abstract translation: PCT No.PCT / DE97 / 02272 Sec。 371日期：1998年9月28日 102（e）1998年9月28日PCT PCT 1997年10月6日PCT公布。 第WO98 / 15972号公报 日期1998年04月16日一种通过各向异性等离子体蚀刻在衬底中制造蚀刻结构的方法，其中基本上各向同性蚀刻操作和侧壁钝化分别进行，并且交替地进行，衬底是聚合物，金属或多组分系统，以及 在侧壁钝化期间施加的侧壁钝化层的部分在随后的蚀刻操作期间转移到侧壁的暴露侧表面，因此整个方法整体上是各向异性的。

    FLUID PATHS IN ETCHABLE MATERIALS
    198.
    发明公开
    FLUID PATHS IN ETCHABLE MATERIALS 审中-公开
    液体途径与刻蚀材料

    公开(公告)号：EP2091648A2

    公开(公告)日：2009-08-26

    申请号：EP07864582.7

    申请日：2007-11-19

    Applicant: Bioscale, Inc.

    Inventor： MILLER, Michael ,  MASTERS, Brett P. ,  SCHMIDT, Martin

    IPC: B01L3/00 ,  B81C1/00

    CPC classification number: B81C1/00714 ,  B81B2201/058 ,  B81B2203/033 ,  B81C2201/0112

    Abstract: The invention relates to fluid paths in etchable materials. Fluid paths are formed by forming a cavity through a substrate material with a first dry removal process to produce a first surface of the cavity. The first surface of the cavity is associated with a first roughness. The first surface of the cavity is etched with a second wet removal process to reduce the first roughness and produce a second roughness associated with the first surface of the cavity. A coating is applied to the first surface of the cavity to produce a second surface to improve wettability of the first or second surface of the cavity, reduce in size or number gas nucleation sites in the first or second surface of the cavity, reduce the amount of debris associated with the first roughness carried by the fluid flow, and/or improve hydrophilicity of the first or second surface.

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