公开(公告)号：FR3034254A1

公开(公告)日：2016-09-30

申请号：FR1552623

申请日：2015-03-27

Applicant: ST MICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： PETIT DAVID ,  MONSIEUR FREDERIC ,  FEDERSPIEL XAVIER ,  BIDAL GREGORY

IPC: H01L21/32 ,  H01L21/36

Abstract: Le procédé de réalisation du substrat de type silicium sur isolant, comprend à partir d'un substrat initial de type silicium sur isolant comportant un film semiconducteur (3) au-dessus d'une couche isolante enterrée (2) elle-même située au-dessus d'un substrat porteur (1), une modification localisée de l'épaisseur du film semiconducteur de façon à former un film semiconducteur (3) ayant des épaisseurs différentes (E1, E2) dans des zones différentes (Z1, Z2).

公开(公告)号：FR3002079B1

公开(公告)日：2016-09-09

申请号：FR1351140

申请日：2013-02-11

Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  STMICROELECTRONICS (CROLLES 2) SAS ,  ST MICROELECTRONICS SA

Inventor： NIEBOJEWSKI HEIMANU ,  MORAND YVES ,  VINET MAUD

IPC: H01L21/336 ,  H01L21/76 ,  H01L29/772

公开(公告)号：FR3002812B1

公开(公告)日：2016-08-05

申请号：FR1351846

申请日：2013-03-01

Applicant: STMICROELECTRONICS (CROLLES 2) SAS ,  COMMISSARIAT ENERGIE ATOMIQUE

Inventor： HALIMAOUI AOMAR ,  ARBAOUI EDRISSE ,  LARREY VINCENT ,  MORALES CHRISTOPHE

IPC: H01L21/30 ,  H01L21/18

公开(公告)号：US20250160032A1

公开(公告)日：2025-05-15

申请号：US19020571

申请日：2025-01-14

Applicant: STMicroelectronics (Research & Development) Limited ,  STMicroelectronics (Crolles 2) SAS

Inventor： Jeff M. RAYNOR ,  Frederic LALANNE ,  Pierre MALINGE

IPC: H10F39/00 ,  H04N25/53 ,  H04N25/77 ,  H10F39/18

Abstract: The present disclosure relates to an image sensor that includes first and second pixels. One or more transistors of the first pixel share an active region with one or more transistors of the second pixel.

公开(公告)号：US12256590B2

公开(公告)日：2025-03-18

申请号：US17543004

申请日：2021-12-06

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Thierry Berger ,  Stephane Allegret-Maret

IPC: H01L23/14 ,  H10K30/35 ,  H10K30/82 ,  H10K30/87 ,  H10K39/32

Abstract: A pixel includes a first electrode layer on an exposed surface of an interconnection structure and in contact with a conductive element of the interconnection structure. An insulating layer extends over the first electrode layer and includes opening crossing through the insulating layer to the first electrode layer. A second electrode layer is on top of and in contact with the first electrode layer and the insulating layer in the opening. A film configured to convert photons into electron-hole pairs is on the insulating layer, the second electrode layer and filling the opening. A third electrode layer covers the film.

公开(公告)号：US12224302B2

公开(公告)日：2025-02-11

申请号：US16862316

申请日：2020-04-29

Applicant: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED ,  STMicroelectronics (Crolles 2) SAS

Inventor： Jeff M. Raynor ,  Frederic Lalanne ,  Pierre Malinge

IPC: H01L27/146 ,  H04N25/77 ,  H04N25/53

Abstract: The present disclosure relates to an image sensor that includes first and second pixels. One or more transistors of the first pixel share an active region with one or more transistors of the second pixel.

公开(公告)号：US12144187B2

公开(公告)日：2024-11-12

申请号：US18335940

申请日：2023-06-15

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Remy Berthelon ,  Olivier Weber

IPC: H10B63/00

Abstract: A method for manufacturing an electronic chip includes providing a semiconductor layer located on an insulator covering a semiconductor substrate. First and second portions of the semiconductor layer are oxidized up to the insulator. Stresses are generated in third portions of the semiconductor layer, and each of the third portions extend between two portions of the semiconductor layer that are oxidized. Cavities are formed which extend at least to the substrate through the second portions and the insulator. Bipolar transistors are formed in at least part of the cavities and first field effect transistors are formed in and on the third portions. Phase change memory points are coupled to the bipolar transistors.

公开(公告)号：US20240332324A1

公开(公告)日：2024-10-03

申请号：US18739927

申请日：2024-06-11

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois ROY

IPC: H01L27/146 ,  H04N25/53 ,  H04N25/621 ,  H04N25/705 ,  H04N25/75 ,  H04N25/77

CPC classification number: H01L27/14603 ,  H01L27/1463 ,  H04N25/53 ,  H04N25/621 ,  H04N25/705 ,  H04N25/75 ,  H04N25/77

Abstract: A sensor includes pixels supported by a substrate doped with a first conductivity type. Each pixel includes a portion of the substrate delimited by a vertical insulation structure with an image sensing assembly and a depth sensing assembly. The image sensing assembly includes a first region of the substrate more heavily doped with the first conductivity type and a first vertical transfer gate completely laterally surrounding the first region. Each of the depth sensing assemblies includes a second region of the substrate more heavily doped with the first conductivity type a second vertical transfer gate opposite a corresponding portion of the first vertical transfer gate. The second region is arranged between the second vertical transfer gate and the corresponding portion of the first vertical transfer gate.

公开(公告)号：US20240274552A1

公开(公告)日：2024-08-15

申请号：US18625631

申请日：2024-04-03

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Didier DUTARTRE

IPC: H01L23/66 ,  H01L21/762 ,  H01L29/06

CPC classification number: H01L23/66 ,  H01L21/76286 ,  H01L29/0646 ,  H01L29/0649 ,  H01L2223/6688

Abstract: An integrated circuit includes a substrate having at least one first domain and at least one second domain that is different from the at least one first domain. A trap-rich region is provided in the substrate at the locations of the at least one second domain only. Locations of the at least one first domain do not include the trap-rich region.

公开(公告)号：US20240186090A1

公开(公告)日：2024-06-06

申请号：US18193230

申请日：2023-03-30

Applicant: STMICROELECTRONICS SA ,  STMicroelectronics (Crolles 2) SAS ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Philippe CATHELIN ,  Frederic GIANESELLO ,  Alain FLEURY ,  Stephane MONFRAY ,  Bruno REIG ,  Vincent PUYAL

IPC: H01H37/34 ,  H10N70/00 ,  H10N70/20

CPC classification number: H01H37/34 ,  H10N70/231 ,  H10N70/826 ,  H10N70/8413 ,  H10N70/882

Abstract: The present description concerns a switch based on a phase-change material comprising: first, second, and third electrodes; a first region of said phase-change material coupling the first and second electrodes; and —a second region of said phase-change material coupling the second and third electrodes.