公开(公告)号：US07049753B2

公开(公告)日：2006-05-23

申请号：US10219201

申请日：2002-08-14

Applicant: Robert T. Rasmussen

Inventor： Robert T. Rasmussen

IPC: G09G

CPC classification number: G09G3/22 ,  G09G2320/0233 ,  H01J29/467 ,  H01J29/481 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/4695

Abstract: The invention includes field emitters, field emission displays (FEDs), monitors, computer systems and methods employing the same for providing uniform electron beams from cathodes of FED devices. The apparatuses each include electron beam uniformity circuitry. The electron beam uniformity circuit provides a grid voltage, VGrid, with a DC offset voltage sufficient to induce field emission from a cathode and a periodic signal superimposed on the DC offset voltage for varying the grid voltage at a frequency fast enough to be undetectable by the human eye. The cathodes may be of the micro-tipped or flat variety. The periodic signal may be sinusoidal with peak-to-peak voltage of between about 5 volts and about 50 volts.

Abstract translation: 本发明包括场发射器，场致发射显示器（FED），监视器，计算机系统以及采用该系统的方法来从FED装置的阴极提供均匀的电子束。 这些装置各自包括电子束均匀性电路。 电子束均匀性电路提供具有足以诱导来自阴极的场发射的DC偏移电压的电网电压V T和栅极电压，以及叠加在DC偏移电压上的周期性信号，用于在 频率足够快，不能被人眼察觉。 阴极可以是微尖或扁平的品种。 周期信号可以是正弦曲线，其中峰 - 峰电压介于约5伏至约50伏之间。

公开(公告)号：US06958492B2

公开(公告)日：2005-10-25

申请号：US10734288

申请日：2003-12-15

Applicant: Chun-Yao Huang ,  Cheng-Chung Chen ,  Yu-Wu Wang ,  Chen-Ming Chen ,  Huai-Yuan Tseng

Inventor： Chun-Yao Huang ,  Cheng-Chung Chen ,  Yu-Wu Wang ,  Chen-Ming Chen ,  Huai-Yuan Tseng

IPC: G09G3/22 ,  H01J31/12 ,  H01L21/336 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L31/0376

CPC classification number: H01L29/42384 ,  G09G3/22 ,  G09G2300/0809 ,  H01J31/127 ,  H01J2201/319 ,  H01L27/12 ,  H01L29/78645

Abstract: A thin film transistor structure for a field emission display is disclosed, which has a substrate; a patterned poly-silicon layer having a source area, a drain area, and a channel on the substrate; a patterned first gate metal layer; a first gate-insulating layer sandwiched in between the poly-silicon layer and the first gate metal layer; a patterned second gate metal layer; and a second gate-insulating layer sandwiched in between the poly-silicon layer and the second gate metal layer; wherein the thickness of the second insulating layer is greater than that of the first gate-insulating layer, and the absolute voltage in the channel under the first gate metal layer is less than that under the second gate metal layer when a voltage higher than the threshold voltage thereof is applied to both of the first gate metal layer and the second gate metal layer.

公开(公告)号：US06917155B1

公开(公告)日：2005-07-12

申请号：US09572921

申请日：2000-05-17

Applicant: Yukihiro Kamide ,  Shinji Kubota ,  Hiroshi Sata ,  Kazuo Kikuchi

Inventor： Yukihiro Kamide ,  Shinji Kubota ,  Hiroshi Sata ,  Kazuo Kikuchi

IPC: H01J9/42 ,  H01J1/304 ,  H01J9/02 ,  H01J9/50 ,  H01J29/04 ,  H01J29/92 ,  H01J31/12 ,  H01J1/62

CPC classification number: H01J9/50 ,  H01J1/3042 ,  H01J9/025 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/0494 ,  Y02W30/828

Abstract: A cathode panel for a cold cathode field emission display, comprising; (a) a plurality of main wirings, (b) a plurality of branch wirings extending from each main wiring, and (c) cold cathode electron emitting portions connected to the branch wirings, wherein a branch wiring connecting a cold cathode electron emitting portion defective in operation and a main wiring is cut off.

公开(公告)号：US20050082963A1

公开(公告)日：2005-04-21

申请号：US10931094

申请日：2004-09-01

Applicant: Toshihiko Miyazaki ,  Takeo Ono ,  Hideaki Mitsutake ,  Mitsutoshi Hasegawa ,  Eiji Yamaguchi ,  Shuji Yamada ,  Yasuyuki Todokoro

Inventor： Toshihiko Miyazaki ,  Takeo Ono ,  Hideaki Mitsutake ,  Mitsutoshi Hasegawa ,  Eiji Yamaguchi ,  Shuji Yamada ,  Yasuyuki Todokoro

IPC: G09G3/20 ,  G09G3/22 ,  G09G5/02 ,  H01J29/02 ,  H01J29/86 ,  H01J29/92 ,  H01J31/12 ,  H04N5/44 ,  H04N5/70 ,  H04N9/12 ,  H04N9/30 ,  H01J1/02 ,  H01J1/00

CPC classification number: G09G3/2011 ,  G09G3/2014 ,  G09G3/22 ,  G09G5/02 ,  G09G2310/0229 ,  G09G2310/0267 ,  G09G2310/027 ,  G09G2320/0276 ,  G09G2320/0626 ,  G09G2330/02 ,  G09G2330/027 ,  G09G2330/04 ,  G09G2340/125 ,  H01J1/316 ,  H01J29/02 ,  H01J29/028 ,  H01J29/04 ,  H01J29/085 ,  H01J29/86 ,  H01J29/864 ,  H01J29/90 ,  H01J29/92 ,  H01J29/94 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2201/319 ,  H01J2329/02 ,  H01J2329/0489 ,  H01J2329/323 ,  H01J2329/8625 ,  H01J2329/863 ,  H01J2329/864 ,  H01J2329/8645 ,  H01J2329/8655 ,  H01J2329/866 ,  H01J2329/90 ,  H01J2329/92 ,  H04N5/70 ,  H04N7/012 ,  H04N9/12 ,  H04N9/30

Abstract: An image formation apparatus is disclosed which includes, within an enclosure configured by a pair of substrates placed face to face and an external frame placed between the substrates, an electron source placed on one of the pair of substrates, an image formation material placed on the other substrate, and spacers placed between the substrates, characterized in that the spacers and the external frame is conductive and device is provided for electrically connecting the spacers and the external frame so that the equipotential surfaces between the spacers and the external frame are quasi-parallel when driven.

Abstract translation: 公开了一种图像形成装置，其包括在由面对面放置的一对基板和设置在基板之间的外部框架构成的外壳内，放置在一对基板之一上的电子源，放置在该基板上的图像形成材料 其它基板和位于基板之间的间隔物，其特征在于，所述间隔件和所述外框架是导电的，并且所述装置被设置用于电连接所述间隔件和所述外框架，使得所述间隔件和所述外框架之间的等电位面是准 - 驱动时并联

公开(公告)号：US06838814B2

公开(公告)日：2005-01-04

申请号：US10194682

申请日：2002-07-12

Applicant: Ga-Lane Chen

Inventor： Ga-Lane Chen

IPC: H01J1/30 ,  H01J1/304 ,  H01J1/62 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J1/3044 ,  H01J31/127 ,  H01J2201/319 ,  Y10S977/952

Abstract: A field emission display device (1) includes a cathode plate (20), a resistive buffer (30) in contact with the cathode plate, a plurality of electron emitters (40) formed on the buffer, and an anode plate (50) spaced from the electron emitters. Each electron emitter includes a rod-shaped first part (401) and a conical second part (402). The buffer and first parts are made from silicon nitride. The combined buffer and first parts has a gradient distribution of electrical resistivity such that highest electrical resistivity is nearest the cathode plate and lowest electrical resistivity is nearest the anode plate. The second parts are made from niobium. When emitting voltage is applied between the cathode and anode plates, electrons emitted from the electron emitters traverse an interspace region and are received by the anode plate. Because of the gradient distribution of electrical resistivity, only a very low emitting voltage is needed.

Abstract translation: 场发射显示装置（1）包括阴极板（20），与阴极板接触的电阻缓冲器（30），形成在缓冲器上的多个电子发射器（40）和间隔开的阳极板 从电子发射器。 每个电子发射器包括棒状的第一部分（401）和圆锥形的第二部分（402）。 缓冲器和第一部分由氮化硅制成。 组合缓冲器和第一部件具有电阻率的梯度分布，使得最高电阻率最接近阴极板，最低电阻率最接近阳极板。 第二部分由铌制成。 当在阴极和阳极板之间施加发射电压时，从电子发射器发射的电子穿过空间区域并被阳极板接收。 由于电阻率的梯度分布，只需要非常低的发射电压。

公开(公告)号：US20040265592A1

公开(公告)日：2004-12-30

申请号：US10893285

申请日：2004-07-19

Inventor： Masayuki Nakamoto

IPC: B32B015/04 ,  B32B009/00

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30469 ,  H01J2201/319 ,  Y10S977/734 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/939 ,  Y10T428/30 ,  Y10T428/31678

Abstract: A field emission type cold cathode device comprises a substrate, and a metal plating layer formed on the substrate, the metal plating layer contains at least one carbon structure selected from a group of fullerenes and carbon nanotubes, the carbon structure is stuck out from the metal plating layer and a part of the carbon structure is buried in the metal plating layer.

Abstract translation: 场发射型冷阴极器件包括衬底和形成在衬底上的金属镀层，金属镀层含有至少一种选自富勒烯和碳纳米管的碳结构，碳结构从金属 镀层和一部分碳结构埋在金属镀层中。

公开(公告)号：US06818915B1

公开(公告)日：2004-11-16

申请号：US09622734

申请日：2000-11-27

Applicant: Keisuke Koga

Inventor： Keisuke Koga

IPC: H01L2912

CPC classification number: H01L27/0705 ,  H01J1/3042 ,  H01J2201/319 ,  H01J2329/00

Abstract: The field emission type electron source device of the present invention includes: a field emission electron source portion including an extraction electrode provided on a p-type silicon substrate via an insulating film and having an opening portion at a position corresponding to a region where a cathode is provided; and a cathode portion provided on the p-type silicon substrate and at a position corresponding to the opening portion of the extraction portion; and an n-channel field effect transistor portion provided on the p-type silicon substrate, corresponding to the field emission electron source portion. The field emission electron source portion is provided in a drain region of the field effect transistor portion. A control voltage is applied to a gate electrode of the field effect transistor portion to control a field emission current from the field emission electron source portion. The drain region includes at least two wells having different impurity concentrations. Of the at least two wells, one well having a low impurity concentration is provided at an end of the drain region which contacts a channel region of the field effect transistor portion.

Abstract translation: 本发明的场致发射型电子源器件包括：场致发射电子源部，其包括通过绝缘膜设置在p型硅衬底上的引出电极，并且在对应于阴极的区域的位置处具有开口部分 被提供; 以及阴极部，设置在所述p型硅衬底上并且位于与所述提取部的开口部对应的位置; 以及设置在p型硅衬底上的对应于场发射电子源部分的n沟道场效应晶体管部分。 场致发射电子源部分设置在场效应晶体管部分的漏极区域中。 对场效应晶体管部分的栅电极施加控制电压，以控制来自场发射电子源部分的场致发射电流。 漏极区域包括至少两个具有不同杂质浓度的阱。 在至少两个阱中，在漏极区域的与场效应晶体管部分的沟道区域接触的端部处提供具有低杂质浓度的一个阱。

公开(公告)号：US06790114B2

公开(公告)日：2004-09-14

申请号：US10109847

申请日：2002-04-01

Applicant: Ammar Derraa

Inventor： Ammar Derraa

IPC: H01J924

CPC classification number: H01J9/185 ,  H01J31/127 ,  H01J2201/319

Abstract: Field emitter display (FED) assemblies and methods of forming field emitter display (FED) assemblies are described. In one embodiment, a substrate is provided having a column line formed and supported thereby. A plurality of field emitter tip regions are formed and disposed in operable proximity to the column line. At least some of the regions define different pixels of the display. A continuous resistor is interposed between the column line and at least two different pixels. In another embodiment, a column line is formed and supported by a substrate. A plurality of field emitter tip regions are formed and disposed in operable proximity to the column line. The regions define different pixels of the display. A single current-limiting resistor is operably coupled with the column line and at least two different pixels. In yet another embodiment, a series of column lines are formed over a substrate. A series of field emitter tip regions are formed and arranged into discrete pixels which are disposed in operable proximity to individual respective column lines. A series of resistor strips is formed and supported by the substrate. The resistor strips individually underlie respective individual series of field emitter tip regions. The individual resistor strips operably connect respective column lines and field emitter tip regions. At least one of the resistor strips operably connects its associated column line and at least two different discrete pixels. Other embodiments are described.

Abstract translation: 描述了场发射器显示（FED）组件和形成场发射器显示（FED）组件的方法。 在一个实施例中，提供具有形成并由其支撑的列线的基板。 多个场发射极尖端区域形成并布置成可操作地接近列线。 至少一些区域定义显示器的不同像素。 在列线和至少两个不同的像素之间插入连续电阻。 在另一个实施例中，柱线由衬底形成并支撑。 多个场发射极尖端区域形成并布置成可操作地接近列线。 这些区域定义显示器的不同像素。 单个限流电阻器与列线和至少两个不同的像素可操作地耦合。 在另一个实施例中，在衬底上形成一系列列线。 一系列场发射器尖端区域形成并布置成离散的像素，这些离散像素设置成可操作地接近各个相应的列线。 一系列电阻条由衬底形成并支撑。 电阻带分别位于各个系列的场发射器尖端区域的下面。 各个电阻条可操作地连接相应的列线和场发射极尖端区域。 电阻条中的至少一个可操作地连接其相关联的列线和至少两个不同的离散像素。 描述其他实施例。

公开(公告)号：US06712664B2

公开(公告)日：2004-03-30

申请号：US10191677

申请日：2002-07-08

Applicant: James J. Hofmann ,  John K. Lee ,  David A. Cathey ,  Glen E. Hush

Inventor： James J. Hofmann ,  John K. Lee ,  David A. Cathey ,  Glen E. Hush

IPC: H01J924

CPC classification number: H01J3/022 ,  H01J9/241 ,  H01J29/04 ,  H01J29/06 ,  H01J29/89 ,  H01J31/127 ,  H01J2201/319

Abstract: An apparatus and a method for stabilizing the threshold voltage in an active matrix field emission device. The method includes the formation of radiation-blocking elements between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED.

Abstract translation: 用于稳定有源矩阵场发射器件中的阈值电压的装置和方法。 该方法包括在FED的阴极发光显示屏和形成在FED的底板上的半导体结之间形成辐射阻挡元件。

公开(公告)号：US20040007962A1

公开(公告)日：2004-01-15

申请号：US10194145

申请日：2002-07-11

Inventor： Ga-Lane Chen

IPC: H01J001/304 ,  H01J019/24

CPC classification number: H01J1/3044 ,  H01J31/127 ,  H01J2201/319

Abstract: A field emission display device (1) includes a cathode plate (20), a resistive buffer (30) in contact with the cathode plate, a plurality of electron emitters (40) formed on the buffer and an anode plate (50) spaced from the buffer. Each electron emitter includes a rod-shaped first part (401) and a conical second part (402). The buffer and first parts are made from silicon oxide (SiOx). The combined buffer and first parts has a gradient distribution of electrical resistivity such that highest electrical resistivity is nearest the cathode plate and lowest electrical resistivity is nearest the anode plate. The second parts are made from molybdenum. When emitting voltage is applied between the cathode and anode plates, electrons emitted from the second parts traverse an interspace region and are received by the anode plate. Because of the gradient distribution of electrical resistivity, only a very low emitting voltage is needed.