公开(公告)号：US2533387A

公开(公告)日：1950-12-12

申请号：US6033348

申请日：1948-11-16

Applicant: NAT UNION RADIO CORP

Inventor： MCLEAN WILLIAM S

IPC: H01J1/32 ,  H01J9/12

CPC classification number: H01J1/32 ,  H01J9/125 ,  H01J2201/32 ,  Y10S428/925 ,  Y10S428/938 ,  Y10T428/12729 ,  Y10T428/12903

公开(公告)号：US2472189A

公开(公告)日：1949-06-07

申请号：US48010243

申请日：1943-03-22

Applicant: HARTFORD NAT BANK & TRUST CO

Inventor： HENRI BIENFAIT ,  FREDERIK VEENEMANS CORNELIS

IPC: H01J7/18 ,  H01J9/04 ,  H01J9/12

CPC classification number: H01J9/125 ,  H01J7/183 ,  H01J9/042 ,  H01J2201/32 ,  Y10S428/938 ,  Y10T428/12076 ,  Y10T428/12097 ,  Y10T428/12778

公开(公告)号：US2164595A

公开(公告)日：1939-07-04

申请号：US17431437

申请日：1937-11-13

Applicant: SIEMENS AG

Inventor： KARL SIEBERTZ

IPC: H01J9/12

CPC classification number: H01J9/12 ,  H01J2201/32 ,  H01J2201/34

公开(公告)号：EP1598844B1

公开(公告)日：2010-09-22

申请号：EP04702855.0

申请日：2004-01-16

Applicant: HAMAMATSU PHOTONICS K. K.

Inventor： WATANABE, Takashi, Hamamatsu Photonics K.K. ,  AKAI, Yoshiro, Hamamatsu Photonics K.K. ,  SAKAI, Shirou, Hamamatsu Photonics K.K.

IPC: H01J9/12

CPC classification number: C22B26/10 ,  C22B5/04 ,  C23C14/14 ,  C23C14/243 ,  H01J1/35 ,  H01J9/12 ,  H01J2201/32 ,  H01J2201/3426

公开(公告)号：EP1521286A4

公开(公告)日：2006-12-13

申请号：EP04702788

申请日：2004-01-16

Applicant: HAMAMATSU PHOTONICS KK

Inventor： SUGIYAMA HIROYUKI ,  AKAI YOSHIRO ,  SAKAI SHIROU

IPC: C22B5/04 ,  C22B26/10 ,  C23C14/14 ,  C23C14/24 ,  H01J1/35 ,  H01J9/12

CPC classification number: C22B26/10 ,  C22B5/04 ,  C23C14/14 ,  C23C14/243 ,  H01J1/35 ,  H01J9/12 ,  H01J2201/32 ,  H01J2201/3426

Abstract: An alkali metal generating agent (1) for use in forming a photoelectric surface emitting a photoelectron corresponding to an incident light or a secondary electron emission surface emitting a secondary electron corresponding to an incident electron, which comprises an oxidizing agent comprising at least one tungstate having an alkali metal ion as a counter cation and a reducing agent for reducing the above cation. The above metal generating agent (1), which includes a tungstate having weaker oxidizing power than that of a chromate, undergoes slower oxidation-reduction reaction, which results in easier reaction rate control as compared to a conventional technique using a chromate, leading to the generation of an alkali metal with good stability.

公开(公告)号：EP1376641A3

公开(公告)日：2006-10-25

申请号：EP03253962.9

申请日：2003-06-24

Applicant: NGK INSULATORS, LTD.

Inventor： Takeuchi, Yukihisa., c/o NGK Insulators Ltd ,  Nanataki, Tsutomu., c/o NGK Insulators Ltd ,  Ohwada, Iwao., c/o Int.Prop.Dpt NGK Insulators Ltd ,  Kokune, Nobuyuki c/o NGK Insulators Ltd

IPC: H01J1/30 ,  H01J1/316 ,  H01J31/12

CPC classification number: H01J1/30 ,  G09G3/2011 ,  G09G3/22 ,  G09G2300/0439 ,  G09G2310/06 ,  G09G2320/043 ,  G09G2330/04 ,  H01J1/316 ,  H01J2201/32 ,  H01J2329/00

Abstract: An electron emitter (10A) has an emitter section (14) formed on a substrate (12), a cathode electrode (16) formed on one surface of the emitter section (14), and an anode electrode (20) formed on the same one surface of the emitter section (14) and cooperating with the cathode electrode (16) in providing a slit (18). A pulse generation source (22) applies a drive voltage (Va) between the cathode electrode (16) and the anode electrode (20). The anode electrode (20) is connected to GND (ground). The slit (18) has a width (d) in the range from 0.1 µm to 50 µm.

Abstract translation: 电子发射体（10A）具有在基板（12）上形成的发射极部分（14），形成在发射极部分（14）的一个表面上的阴极电极（16）和形成在其上的阳极电极（20） 发射极部分（14）的一个表面并且与阴极电极（16）配合以提供狭缝（18）。 脉冲发生源（22）在阴极电极（16）和阳极电极（20）之间施加驱动电压（Va）。 阳极电极（20）连接到GND（地）。 狭缝（18）的宽度（d）为0.1μm〜50μm。

公开(公告)号：EP1376641A2

公开(公告)日：2004-01-02

申请号：EP03253962.9

申请日：2003-06-24

Applicant: NGK INSULATORS, LTD.

Inventor： Takeuchi, Yukihisa., c/o NGK Insulators Ltd ,  Nanataki, Tsutomu., c/o NGK Insulators Ltd ,  Ohwada, Iwao., c/o Int.Prop.Dpt NGK Insulators Ltd ,  Kokune, Nobuyuki c/o NGK Insulators Ltd

IPC: H01J1/304 ,  H01J1/316 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J1/30 ,  G09G3/2011 ,  G09G3/22 ,  G09G2300/0439 ,  G09G2310/06 ,  G09G2320/043 ,  G09G2330/04 ,  H01J1/316 ,  H01J2201/32 ,  H01J2329/00

Abstract: An electron emitter (10A) has an emitter section (14) formed on a substrate (12), a cathode electrode (16) formed on one surface of the emitter section (14), and an anode electrode (20) formed on the same one surface of the emitter section (14) and cooperating with the cathode electrode (16) in providing a slit (18). A pulse generation source (22) applies a drive voltage (Va) between the cathode electrode (16) and the anode electrode (20). The anode electrode (20) is connected to GND (ground). The slit (18) has a width (d) in the range from 0.1 µm to 50 µm.

公开(公告)号：EP0846332B1

公开(公告)日：2002-04-24

申请号：EP96925463.0

申请日：1996-07-25

Applicant: Center for Advanced Fiberoptic Applications (Cafa)

Inventor： THEN, Alan, M. ,  BENTLEY, Scott, T.

IPC: H01J43/18 ,  H01J9/12

CPC classification number: H01J9/125 ,  H01J2201/32

Abstract: A method for manufacturing a discrete dynode electron multiplier includes employing micromachining and thin film techniques to produce tapered apertures in an etchable substrate, bonding the substrates together and activating the internal surfaces of the etched substrate using chemical vapor deposition or oxidizing and nitriding techniques.

公开(公告)号：EP0846332A1

公开(公告)日：1998-06-10

申请号：EP96925463.0

申请日：1996-07-25

Applicant: Center for Advanced Fiberoptic Applications (Cafa)

Inventor： THEN, Alan, M. ,  BENTLEY, Scott, T.

IPC: H01J9

CPC classification number: H01J9/125 ,  H01J2201/32

Abstract: A method for manufacturing a discrete dynode electron multiplier includes employing micromachining and thin film techniques to produce tapered apertures in an etchable substrate, bonding the substrates together and activating the internal surfaces of the etched substrate using chemical vapor deposition or oxidizing and nitriding techniques.

Abstract translation: 用于制造分立的倍增极电子倍增器的方法包括采用微机械加工和薄膜技术在可蚀刻基板中产生锥形孔，将基板粘合在一起并使用化学气相沉积或氧化和氮化技术活化蚀刻基板的内表面。

公开(公告)号：EP0622824B1

公开(公告)日：1997-07-30

申请号：EP94303076.7

申请日：1994-04-28

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kyushima, Hiroyuki, c/o Hamamatsu Photonics K.K. ,  Nagura, Koji, c/o Hamamatsu Photonics K.K. ,  Hasegawa, Yutaka, c/o Hamamatsu Photonics K.K. ,  Kawano, Eiichiro, c/o Hamamatsu Photonics K.K. ,  Kuroyanagi, Tomihiko, c/o Hamamatsu Photonics K.K. ,  Atsumi, Akira, c/o Hamamatsu Photonics K.K. ,  Mizuide, Masuya, c/o Hamamatsu Photonics K.K.

IPC: H01J43/04 ,  H01J43/12

CPC classification number: H01J43/12 ,  H01J9/12 ,  H01J9/18 ,  H01J43/04 ,  H01J43/10 ,  H01J43/22 ,  H01J2201/32 ,  H01J2201/3426