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    Method, device and program for manufacturing silicon structure
    211.
    发明专利
    Method, device and program for manufacturing silicon structure 有权
    方法，制造硅结构的设备和程序

    公开(公告)号：JP2011086782A

    公开(公告)日：2011-04-28

    申请号：JP2009238802

    申请日：2009-10-16

    Applicant: Sumitomo Precision Prod Co Ltd ,  住友精密工業株式会社

    Inventor： MURAKAMI SHOICHI ,  HATASHITA AKIYASU

    IPC: H01L21/3065 ,  B81C1/00

    CPC classification number: H01L21/30655 ,  B81C1/00063 ,  B81C2201/0112 ,  H01L21/3065 ,  H01L21/3083

    Abstract: PROBLEM TO BE SOLVED: To provide high shape control of a silicon structure formed by combining anisotropic etching with isotropic etching.
    SOLUTION: The method for manufacturing a silicon structure includes: a first step of performing trench etching to silicon using plasma formed by alternately or mixedly introducing etching gas and organic deposition formation gas; a second step of exposing a silicon structure formed by the first step to plasma formed by introducing the organic deposition formation gas; a third step of exposing silicon on the bottom face of a part subjected to the trench etching out of the silicon structure formed by the second step; a fourth step of exposing the silicon structure formed by the third step to xenon difluoride gas; and a fifth step of heating the silicon structure formed by the fourth step at 50-500°C in an oxygen-containing gas atmosphere.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供通过组合各向异性蚀刻和各向同性蚀刻形成的硅结构的高形状控制。 解决方案：制造硅结构的方法包括：使用通过交替或混合地引入蚀刻气体和有机沉积形成气体形成的等离子体对硅进行沟槽蚀刻的第一步骤; 将由第一步骤形成的硅结构暴露于通过引入有机沉积成形气体形成的等离子体的第二步骤; 第三步骤，在经过沟槽蚀刻的部分的底面上露出由第二步形成的硅结构的硅; 将由第三步骤形成的硅结构暴露于氙二氟化物气体的第四步骤; 以及在含氧气体气氛中，在50-500℃下加热由第四步形成的硅结构的第五步骤。 版权所有（C）2011，JPO＆INPIT

    Gap tuning for surface micromachined structure in epitaxial reactor
    217.
    发明专利
    Gap tuning for surface micromachined structure in epitaxial reactor 有权
    外源性反应器表面微结构结构的GAP调谐

    公开(公告)号：JP2012106340A

    公开(公告)日：2012-06-07

    申请号：JP2012054950

    申请日：2012-03-12

    Applicant: Robert Bosch Gmbh ,  ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングRobert Bosch Gmbh

    Inventor： PARTRIDGE AARON ,  LUTZ MARKUS

    IPC: B81C1/00 ,  B81B3/00 ,  B81C99/00

    CPC classification number: B81C1/00063 ,  B81B3/0086 ,  B81C2201/0112 ,  B81C2203/0136 ,  B81C2203/0145

    Abstract: PROBLEM TO BE SOLVED: To provide a method for tuning a gap between a plurality of surfaces of at least one micromechanical element on a device.SOLUTION: The method includes: etching a contour of the at least one micromechanical element in a top layer of the device so that the contour defines at least two opposing surfaces of the plurality of surfaces of the at least one micromechanical element; and depositing a gap narrowing layer on the at least two opposing surfaces of the plurality of surfaces in an epitaxial reactor so that the gap between the at least two opposing surfaces of the plurality of surfaces can be narrowed by the gap narrowing layer.

    Abstract translation: 要解决的问题：提供一种用于调整装置上的至少一个微机械元件的多个表面之间的间隙的方法。 解决方案：该方法包括：蚀刻装置的顶层中的至少一个微机械元件的轮廓，使得轮廓限定至少一个微机械元件的多个表面中的至少两个相对的表面; 以及在外延反应器中在所述多个表面的所述至少两个相对表面上沉积间隙变窄层，使得所述多个表面的所述至少两个相对表面之间的间隙可以被所述间隙变窄层变窄。 版权所有（C）2012，JPO＆INPIT

    Anisotropic etching method for silicon
    220.
    发明专利
    Anisotropic etching method for silicon 有权
    用于硅的各向异性蚀刻方法

    公开(公告)号：JP2007129260A

    公开(公告)日：2007-05-24

    申请号：JP2007001632

    申请日：2007-01-09

    Applicant: Robert Bosch Gmbh ,  ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングRobert Bosch Gmbh

    Inventor： LAERMER FRANZ ,  SCHILP ANDREA

    IPC: H01L21/302 ,  H01L21/3065 ,  B81C1/00 ,  H01L21/308

    CPC classification number: H01L21/3085 ,  B81C1/00619 ,  B81C2201/0112 ,  H01L21/3065 ,  H01L21/30655 ,  Y10T428/24521

    Abstract: PROBLEM TO BE SOLVED: To provide an anisotropic etching method by plasma on a silicon substrate, using an etching mask that makes it possible to obtain a notch part, defined correctly on a side surface. SOLUTION: A silicon substrate 18 is arranged on a substrate electrode 12 in the working range of a sulfatron 16, connected to a resonator 20 for microwave plasma excitation inside an etching chamber 10, where the substrate electrode 12 connected to a high-frequency generator 14 is arranged. Furthermore, a polymerization process and an etching process which continue alternately are implemented, by using the microwave plasma apparatus with a waveguide 22 for drawing reactive gas. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：为了在硅衬底上提供通过等离子体的各向异性蚀刻方法，使用能够获得在侧表面上正确定义的缺口部分的蚀刻掩模。 解决方案：在基板电极12的基板电极12上设置有硅基板18，该基板电极12与蚀刻室10内的微波等离子体激发用谐振器20连接的硫酸盐电极16的工作范围内， 设置频率发生器14。 此外，通过使用具有用于拉伸反应气体的波导22的微波等离子体装置，实现了交替继续的聚合方法和蚀刻工艺。 版权所有（C）2007，JPO＆INPIT

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