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211.发明授权Method of manufacturing an X-ray exposure mask and device for controlling the internal stress of thin films 失效制造X射线曝光掩模的方法和用于控制薄膜内应力的装置
公开(公告)号：US5188706A
公开(公告)日：1993-02-23
申请号：US494397
申请日：1990-03-16
Applicant: Masaru Hori , Masamitsu Itoh
Inventor： Masaru Hori , Masamitsu Itoh
CPC classification number: G03F1/22 , B81C1/00666 , B81C2201/017
Abstract: An X-ray mask can be manufactured by forming an X-ray transmitting thin film on a mask support, forming an X-ray absorber thin film on the X-ray transmitting thin film, and patterning the X-ray absorber thin film with a desired pattern to form an X-ray absorber pattern. Prior to the patterning, at least one inert element with an atomic number greater than that of neon is ion-implanted in the X-ray absorber thin film.
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公开(公告)号：KR101710826B1
公开(公告)日：2017-02-27
申请号：KR1020160019749
申请日：2016-02-19
Applicant: 인피니언 테크놀로지스 아게
CPC classification number: B81B3/0072 , B81B3/001 , B81B3/0027 , B81B2201/0257 , B81B2203/0127 , B81B2203/0315 , B81C1/00182 , B81C1/00404 , B81C1/00984 , B81C2201/017 , B81C2201/115
Abstract: 본발명의일 실시예에따른, 반도체디바이스를형성하는방법은제 1 면과그 반대편의제 2 면을갖는워크피스의상기제 1 면위에희생층을형성하는단계를포함한다. 상기희생층의위에는멤브레인이형성된다. 상기제 2 면으로부터상기워크피스를관통하는관통홀이에칭되어상기희생층의표면을노출시킨다. 상기희생층의적어도일 부분이상기제 2 면으로부터제거되어상기멤브레인의아래에캐비티를형성한다. 상기캐비티는상기멤브레인에맞춰정렬된다.
Abstract translation: 根据本发明的实施例，形成半导体器件的方法包括在具有第一表面和相对的第二表面的工件的第一表面上形成牺牲层。 在牺牲层上形成膜。 从第二表面通过工件蚀刻通孔以暴露牺牲层的表面。 牺牲层的至少一部分从第二表面移除以在膜下形成空腔。 空腔与膜对准。
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公开(公告)号：KR1020160025546A
公开(公告)日：2016-03-08
申请号：KR1020160019749
申请日：2016-02-19
Applicant: 인피니언 테크놀로지스 아게
CPC classification number: B81B3/0072 , B81B3/001 , B81B3/0027 , B81B2201/0257 , B81B2203/0127 , B81B2203/0315 , B81C1/00182 , B81C1/00404 , B81C1/00984 , B81C2201/017 , B81C2201/115
Abstract: 본발명의일 실시예에따른, 반도체디바이스를형성하는방법은제 1 면과그 반대편의제 2 면을갖는워크피스의상기제 1 면위에희생층을형성하는단계를포함한다. 상기희생층의위에는멤브레인이형성된다. 상기제 2 면으로부터상기워크피스를관통하는관통홀이에칭되어상기희생층의표면을노출시킨다. 상기희생층의적어도일 부분이상기제 2 면으로부터제거되어상기멤브레인의아래에캐비티를형성한다. 상기캐비티는상기멤브레인에맞춰정렬된다.
Abstract translation: 根据本发明的实施例的半导体器件的形成方法包括在具有第一表面的工件的第一表面上的牺牲层和与第一表面相对的第二表面的牺牲层的步骤。 在牺牲层上形成膜。 蚀刻从第二表面贯穿到工件的通孔，将牺牲层的表面暴露于外部。 牺牲层的至少一部分从第二表面移除以在膜下形成空腔。 空腔根据膜对准。
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公开(公告)号：KR1020140113558A
公开(公告)日：2014-09-24
申请号：KR1020140030551
申请日：2014-03-14
Applicant: 인피니언 테크놀로지스 아게
CPC classification number: B81B3/0072 , B81B3/001 , B81B3/0027 , B81B2201/0257 , B81B2203/0127 , B81B2203/0315 , B81C1/00182 , B81C1/00404 , B81C1/00984 , B81C2201/017 , B81C2201/115
Abstract: A method of forming a semiconductor device, according to an embodiment of the present invention, comprises a step of forming a sacrificial layer over a first surface of a workpiece having the first surface and an opposite second surface. A membrane is formed over the sacrificial layer. A through hole passing through the workpiece is etched from the second surface to expose the surface of the sacrificial layer. At least one portion of the sacrificial layer is removed from the second surface to form a cavity under the membrane. The cavity is aligned with the membrane.
Abstract translation: 根据本发明的实施例的形成半导体器件的方法包括在具有第一表面和相对的第二表面的工件的第一表面上形成牺牲层的步骤。 在牺牲层上形成膜。 从第二表面蚀刻穿过工件的通孔以暴露牺牲层的表面。 牺牲层的至少一部分从第二表面移除以在膜下形成空腔。 空腔与膜对准。
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公开(公告)号：KR1020130039733A
公开(公告)日：2013-04-22
申请号：KR1020127030991
申请日：2011-06-08
Applicant: 인터내셔널 비지네스 머신즈 코포레이션
Inventor： 당,딘 , 도안,타이 , 던바,조지,에이. , 허,중-샹 , 헤린,러셀,티. , 잔스,크리스토퍼,브이. , 머피,윌리암,제이. , 스탬퍼,앤서니,케이. , 툼블리,존,지. , 화이트,에릭,제이. , 맬링,제프리,씨.
CPC classification number: B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: 평면의 캐비티(planar cavity) 미세전자기계시스템 (MEMS) 스트럭처들, 제조 방법들 및 디자인 스트럭처가 제공된다. 상기 방법은 리버스 다마신 공정을 사용하여 평면을 갖는 적어도 하나의 미세전자기계시스템 (MEMS) 캐비티 (60a, 60b)를 형성하는 단계를 포함한다.
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Patent Agency Ranking
公开(公告)号：KR1020000057143A
公开(公告)日：2000-09-15
申请号：KR1019997004414
申请日：1997-11-18
Applicant: 지멘스 악티엔게젤샤프트
IPC: H01L21/314
CPC classification number: B81C1/00666 , B81B2203/0127 , B81C2201/017 , G01L9/0042 , H01L21/02164 , H01L21/0217 , H01L21/02271 , H01L21/31612 , H01L21/3185
Abstract: PURPOSE: A method for manufacturing micromechanical functional elements is provided to prevent a pressure stress at a polysilicon layer. CONSTITUTION: A method for manufacturing micromechanical functional elements comprises a step of depositing a protecting layer(6) of an oxide or a nitride on a function element(4) made of polysilicon using a LPCVD(low pressure chemical vapor deposition) technology. In the method, the function element with a layer-shaped structure is previously fabricated. Both sides of the function element are partially etched to be exposed. The protecting layer has a thickness of 5nm-50nm and the protecting layer is deposited to cover the entire exposed area of the function element. In case the protecting layer is formed of a silicon nitride, the protecting layer has a thickness of 10nm-20nm.
Abstract translation: 目的：提供一种制造微机械功能元件的方法，以防止多晶硅层的压力应力。 构成：用于制造微机电功能元件的方法包括使用LPCVD（低压化学气相沉积）技术在由多晶硅制成的功能元件（4）上沉积氧化物或氮化物的保护层（6）的步骤。 在该方法中，预先制造具有层状结构的功能元件。 功能元件的两侧被部分蚀刻以露出。 保护层的厚度为5nm-50nm，并且保护层被沉积以覆盖功能元件的整个暴露区域。 在保护层由氮化硅形成的情况下，保护层的厚度为10nm-20nm。
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217.发明授权公开(公告)号：US09932225B2
公开(公告)日：2018-04-03
申请号：US15148130
申请日：2016-05-06
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Christopher V. Jahnes , Anthony K. Stamper
CPC classification number: B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
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218.发明授权公开(公告)号：US09926191B2
公开(公告)日：2018-03-27
申请号：US15284868
申请日：2016-10-04
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Christopher V. Jahnes , Anthony K. Stamper
CPC classification number: B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
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公开(公告)号：US09887685B2
公开(公告)日：2018-02-06
申请号：US14984886
申请日：2015-12-30
Applicant: International Business Machines Corporation
Inventor： Johan B. C. Engelen , Mark A. Lantz , Wabe W. Koelmans
CPC classification number: H03H9/02393 , B81B3/0045 , B81B3/007 , B81B7/008 , B81B2203/0163 , B81C1/00698 , B81C2201/017 , H02N11/00 , H03H9/02244 , H03H2009/02165 , H03H2009/02299 , H03H2009/02322
Abstract: A mechanical resonator includes a spring-mass system, wherein the spring-mass system comprises a phase-change material. The mechanical resonator typically comprises an electrical circuit portion, coupled to the phase-change material to alter a phase configuration within the phase-change material. Methods of operation are also disclosed.
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220.发明授权公开(公告)号：US09862598B2
公开(公告)日：2018-01-09
申请号：US14840422
申请日：2015-08-31
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Russell T. Herrin , Jeffrey C. Maling , Anthony K. Stamper
CPC classification number: B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.
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