公开(公告)号：US20150146865A1

公开(公告)日：2015-05-28

申请号：US14339004

申请日：2014-07-23

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jae-woo KIM ,  Yoon-Ho SONG ,  Jin Woo JEONG ,  Jun Tae KANG ,  Sungyoul CHOI ,  Jeong Yong CHOI

IPC: H01J1/304 ,  H01J35/06 ,  H01J1/34

CPC classification number: H01J1/304 ,  B82Y30/00 ,  H01J1/34 ,  H01J35/065 ,  H01J2201/30469 ,  H01J2201/3423 ,  Y10S977/742 ,  Y10S977/939

Abstract: Provided are a field emission device and a method of manufacturing the same. The field emission device includes an anode electrode and a cathode electrode which are opposite to each other, a counter layer provided on the anode electrode, and a field emitter provided on the cathode electrode and facing the counter layer. Herein, the field emitter includes a carbon nanotube emitting cold electrons and a photoelectric material emitting photo electrons.

Abstract translation: 提供场致发射器件及其制造方法。 场致发射器件包括彼此相对的阳极电极和阴极电极，设置在阳极电极上的对置层，以及设置在阴极电极上且面向对置层的场致发射体。 这里，场致发射体包括发射冷电子的碳纳米管和发射光电子的光电材料。

公开(公告)号：US20070132050A1

公开(公告)日：2007-06-14

申请号：US11511497

申请日：2006-08-29

Applicant: Masatomo Sumiya ,  Shunro Fuke ,  Tokuaki Nihashi ,  Minoru Hagino

Inventor： Masatomo Sumiya ,  Shunro Fuke ,  Tokuaki Nihashi ,  Minoru Hagino

IPC: H01L27/14

CPC classification number: H01L31/09 ,  H01J2201/3423 ,  H01L31/0304 ,  Y02E10/544

Abstract: Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride semiconductor layer provided adjacent to the first group III nitride semiconductor layer and made of a thin-film crystal having c-axis orientation in a thickness direction, the second group III nitride semiconductor layer having an Al composition higher than that of the first group III nitride semiconductor layer.

Abstract translation: 公开了一种光电表面，包括：根据紫外线的入射产生光电子的第一III族氮化物半导体层; 以及第二III族氮化物半导体层，其与第一III族氮化物半导体层相邻并且由在厚度方向上具有c轴取向的薄膜晶体构成，所述第二III族氮化物半导体层的Al组成高于 的第一III族氮化物半导体层。

公开(公告)号：US20040056279A1

公开(公告)日：2004-03-25

申请号：US10433060

申请日：2003-11-17

Inventor： Minoru Niigaki ,  Toru Hirohata ,  Hirofumi Kan ,  Kuniyoshi Mori

IPC: H01L027/10

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: In the case of a thick light-absorbing layer 2, a phenomenon of a decrease in the time resolution occurs. However, when the thickness of the light-absorbing layer 2 is limited, a portion of low electron concentration in one electron group is cut out, and hence overlap regions of adjacent electron concentration distributions decrease. Therefore, by shortening the transit time necessary for the passage of electrons, regions of overlapping electron distributions due to diffusion can also be suppressed. Furthermore, the strength of an electric field within a light-absorbing layer can be increased by thinning the light-absorbing layer. Therefore, the time resolution of infrared rays can be remarkably improved by a synergistic action of these effects. If it is assumed that the time resolution is 40 ps (picoseconds), for example, when the thickness of a light-absorbing layer is 1.3 nullm which is nearly equal to the wavelength of infrared, then a possible time resolution is 7.5 ps when this thickness is 0.19 nullm.

Abstract translation: 在厚光吸收层2的情况下，会发生时间分辨率降低的现象。 然而，当光吸收层2的厚度受限时，一个电子组中的低电子浓度部分被切掉，因此相邻电子浓度分布的重叠区域减小。 因此，通过缩短电子通过所需的通行时间，也可以抑制由扩散引起的重叠电子分布的区域。 此外，可以通过使光吸收层变薄来增加光吸收层内的电场强度。 因此，通过这些效果的协同作用，可以显着提高红外线的时间分辨率。 如果假设时间分辨率为40ps（皮秒），例如，当光吸收层的厚度为1.3μm，几乎等于红外线的波长时，则当这样的时间分辨率为7.5ps时 厚度为0.19毫米。

公开(公告)号：US06633125B2

公开(公告)日：2003-10-14

申请号：US09871509

申请日：2001-05-31

Applicant: Arlynn Walter Smith ,  Rudolph George Benz

Inventor： Arlynn Walter Smith ,  Rudolph George Benz

IPC: H01J4006

CPC classification number: H01J31/50 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2231/50026

Abstract: A cathode structure for an image intensifier tube operates to extend the spectral range of an image intensifier to the short wavelength infrared (SWIR) range of the electromagnetic spectrum, which is between 1.0 to 1.75 &mgr;m. The cathode structure utilizes a multi-layer structure consisting of a layer of GaSb disposed upon a layer of GaAs. The layers form a heterojunction therebetween where the GaSb material absorbs radiation and the GaAs is for emission characteristics. The doping profiles in each material are used to maximize the effects of band gap offsets of the heterojunction as well as provide a nearly flat conduction band profile for the cathode structure. The condition of nearly flat conduction band is enhanced by the use of blocking contacts at the emission surface of the cathode, where a bias is applied.

Abstract translation: 用于图像增强管的阴极结构用于将图像增强器的光谱范围扩展到1.0至1.75μm之间的电磁光谱的短波长红外（SWIR）范围。 阴极结构使用由设置在GaAs层上的GaSb层组成的多层结构。 这些层在其间形成异质结，其中GaSb材料吸收辐射，并且GaAs用于发射特性。 每个材料中的掺杂分布用于最大化异质结的带隙偏移的影响，并且为阴极结构提供几乎平坦的导带分布。 通过在施加偏压的阴极的发射表面上使用阻挡接触来增强近乎平坦导带的条件。

公开(公告)号：US06580215B2

公开(公告)日：2003-06-17

申请号：US09741826

申请日：2000-12-22

Applicant: Tokuaki Nihashi

Inventor： Tokuaki Nihashi

IPC: H01J4006

CPC classification number: H01J1/34 ,  H01J43/08 ,  H01J2201/3423 ,  H01J2231/50021

Abstract: A photocathode having a UV glass substrate and a laminate composed of a SiO2 layer, a GaAlN layer, a Group III-V nitride semiconductor layer and an AlN buffer layer provided on the UV glass substrate in succession. The UV glass substrate, which absorbs infrared rays, can be heat treated at a high speed by photoheating. Further, the UV glass substrate, which is transparent to ultraviolet rays, permits ultraviolet rays to be introduced into the Group III-V nitride semiconductor layer where photoelectric conversion occurs.

Abstract translation: 具有UV玻璃基板和由UV玻璃基板上设置的SiO 2层，GaAlN层，III-V族氮化物半导体层和AlN缓冲层构成的层叠体的光电阴极。 吸收红外线的紫外线玻璃基板可以通过光热进行高速热处理。 此外，对紫外线透明的紫外线玻璃基板，能够在发生光电转换的III-V族氮化物半导体层中引入紫外线。

公开(公告)号：US20030029989A1

公开(公告)日：2003-02-13

申请号：US10090017

申请日：2002-02-22

Inventor： Roger Stettner ,  Howard W. Bailey

IPC: H01L027/00

CPC classification number: G01T1/1644 ,  G01T1/2018 ,  G01T1/247 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2231/50031 ,  H01J2231/50063 ,  H01J2231/50068 ,  H01J2231/5056 ,  H01L27/146 ,  H01L27/14625 ,  H01L27/148 ,  H01L2224/48137

Abstract: A device for the high-speed analysis of photon- or particle-generated image data or for the high-speed energy-discrimination analysis of photon- or particle-counting data. A sensor collects the photons or particles on an array of solid state detectors, as electrical analog signals, and stores the analog-signal information on capacitors of readout arrays associated with the detector arrays. Image-related signals are transferred to integrated circuit chips containing an array of correction processor unit cells. Corrected signals are transferred to an analog image processor. Particle-counting data is transferred directly from the readout array chips to the analog image processor having circuitry for implementing an image processing or energy discrimination algorithm.

Abstract translation: 用于高速分析光子或粒子产生的图像数据或用于光子或粒子计数数据的高速能量鉴别分析的装置。 传感器将固态检测器阵列上的光子或微粒收集为电气模拟信号，并将模拟信号信息存储在与检测器阵列相关联的读出阵列的电容上。 图像相关信号被传送到包含校正处理器单元单元阵列的集成电路芯片。 校正的信号被传送到模拟图像处理器。 粒子计数数据直接从读出阵列芯片传送到具有用于实现图像处理或能量鉴别算法的电路的模拟图像处理器。

公开(公告)号：US06362482B1

公开(公告)日：2002-03-26

申请号：US09154617

申请日：1998-09-16

Applicant: Roger Stettner ,  Howard W. Bailey

Inventor： Roger Stettner ,  Howard W. Bailey

IPC: G01T124

CPC classification number: G01T1/1644 ,  G01T1/2018 ,  G01T1/247 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2231/50031 ,  H01J2231/50063 ,  H01J2231/50068 ,  H01J2231/5056 ,  H01L27/146 ,  H01L27/14625 ,  H01L27/148 ,  H01L2224/48137

Abstract: A device for the high-speed analysis of photon- or particle-generated image data or for the high-speed energy-discrimination analysis of photon- or particle-counting data. The device uses a sensor that collects the photons or particles on an array of solid state detectors, as electrical analog signals, and stores the analog-signal information on capacitors of readout arrays associated with the detector arrays. Integration of the photon or particle flux signals on the readout arrays proceeds for a given time frame and then image-related signals are transferred to an analog correction processor. The analog correction processor is comprised of one or more integrated circuit chips where each chip contains an array of correction processor unit cells. In these unit cells signals are corrected, in parallel, for gain and offset nonuniformities in the detection and processing chain. Corrections to all the signals are made in a time frame or less and the information is then transferred to an analog image processor. Particle-counting data is transferred directly from the readout array chips to the analog image processor. The analog image processor is comprised of one or more integrated circuit chips where each chip is made up of an array of image processor unit cells. Each unit cell contains circuitry for implementing an image processing or energy discrimination algorithm, and circuitry for outputting the signals and/or the position of only those unit cells for which the algorithm is satisfied. The analog image processor chip may also contain circuitry that counts the number of cells for which the algorithms have been satisfied. The analog image processor implements the algorithm and outputs the data in a time frame or less.

Abstract translation: 用于高速分析光子或粒子产生的图像数据或用于光子或粒子计数数据的高速能量鉴别分析的装置。 该装置使用将固态检测器阵列上的光子或粒子作为电气模拟信号收集的传感器，并将模拟信号信息存储在与检测器阵列相关联的读出阵列的电容器上。 光子或粒子通量信号在读出阵列上的集成在给定的时间帧上进行，然后将图像相关的信号传送到模拟校正处理器。 模拟校正处理器由一个或多个集成电路芯片组成，其中每个芯片包含校正处理器单元单元阵列。 在这些单元中，信号被并行校正，用于检测和处理链中的增益和偏移不均匀性。 所有信号的校正是在一个或多个时间帧内进行的，然后信息被传送到模拟图像处理器。 粒子计数数据直接从读出阵列芯片传送到模拟图像处理器。 模拟图像处理器由一个或多个集成电路芯片组成，其中每个芯片由图像处理器单元单元的阵列组成。 每个单位单元包括用于实现图像处理或能量鉴别算法的电路，以及仅输出算法满足的单位单元的信号和/或位置的电路​​。 模拟图像处理器芯片还可以包含对已经满足算法的单元数量进行计数的电路。 模拟图像处理器实现该算法并且在一个或多个时间帧内输出数据。

公开(公告)号：US5834791A

公开(公告)日：1998-11-10

申请号：US960592

申请日：1997-10-30

Applicant: Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

Inventor： Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

IPC: H01J1/34 ,  H01J3/02 ,  H01L29/20

CPC classification number: H01J1/34 ,  H01J3/021 ,  H01J2201/3423 ,  H01J2203/0296

Abstract: A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.

公开(公告)号：US5747826A

公开(公告)日：1998-05-05

申请号：US671195

申请日：1996-06-27

Applicant: Minoru Niigaki ,  Toru Hirohata ,  Tuneo Ihara ,  Masami Yamada

Inventor： Minoru Niigaki ,  Toru Hirohata ,  Tuneo Ihara ,  Masami Yamada

IPC: H01J1/34 ,  H01L29/47

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: The present invention provides a photoemission device excellent in quantum efficiency of photoelectric conversion, a high-sensitive electron tube employing it, and a high-sensitive photodetecting apparatus. A photoemission device of the present invention is arranged to have a photon absorbing layer for absorbing incident photons to excite photoelectrons, an insulator layer layered on one surface of the photon absorbing layer, a lead electrode layered on the insulator layer, and a contact formed on the other surface of the photon absorbing layer to apply a predetermined polarity voltage between the lead electrode and the other surface of the photon absorbing layer, whereby the photoelectrons excited by the incident photons entering the photon absorbing layer and moving toward the one side are made to be emitted by an electric field formed between the lead electrode and the one surface by the predetermined polarity voltage.

Abstract translation: 本发明提供了一种光电转换量子效率优异的使用它的高灵敏度电子管和高灵敏度光电检测装置的光电发射装置。 本发明的发光装置被配置为具有用于吸收入射光子以激发光电子的光子吸收层，层叠在光子吸收层的一个表面上的绝缘体层，层叠在绝缘体层上的引线电极和形成在 光子吸收层的另一个表面，以在引线电极和光子吸收层的另一个表面之间施加预定的极性电压，由此进入光子吸收层并朝向一侧移动的入射光子激发的光电子被制成 由形成在引线电极和一个表面之间的电场发射预定的极性电压。

公开(公告)号：US5684360A

公开(公告)日：1997-11-04

申请号：US499945

申请日：1995-07-10

Applicant: Aaron Wolf Baum ,  Kenneth A. Costello

Inventor： Aaron Wolf Baum ,  Kenneth A. Costello

IPC: H01J37/06 ,  G03F7/20 ,  H01J1/34 ,  H01J3/02 ,  H01J27/04 ,  H01J37/073 ,  H01J40/06

CPC classification number: G03F7/70375 ,  H01J27/04 ,  H01J3/021 ,  H01J37/073 ,  H01J2201/3423

Abstract: An electron source includes a negative electron affinity photocathode on a light-transmissive substrate and a light beam generator for directing a light beam through the substrate at the photocathode for exciting electrons into the conduction band. The photocathode has at least one active area for emission of electrons with dimensions of less than about two micrometers. The electron source further includes electron optics for forming the electrons into an electron beam and a vacuum enclosure for maintaining the photocathode at high vacuum. In one embodiment, the active emission area of the photocathode is defined by the light beam that is incident on the photocathode. In another embodiment, the active emission area of the photocathode is predefined by surface modification of the photocathode. The source provides very high brightness from an ultra-small active emission area of the photocathode.

Abstract translation: 电子源包括透光性基板上的负电子亲合性光电阴极和光束发生器，用于将光束引导到光电阴极处的基板，用于将电子激发到导带中。 光电阴极具有用于发射尺寸小于约两微米的电子的至少一个有源面积。 电子源还包括用于将电子形成电子束的电子光学器件和用于将光电阴极保持在高真空的真空外壳。 在一个实施例中，光电阴极的有效发射面积由入射在光电阴极上的光束限定。 在另一个实施方案中，光电阴极的活性发射面积是通过光电阴极的表面改性预先确定的。 该光源从光电阴极的超小活性发射区提供非常高的亮度。