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    PROCEDE D'INTEGRATION DE MICRO-INTERRUPTEURS DE TYPE MEMS SUR DES SUBSTRATS EN GaN COMPORTANT DES COMPOSANTS ELECTRONIQUES DE PUISSANCE
    222.
    发明公开
    PROCEDE D'INTEGRATION DE MICRO-INTERRUPTEURS DE TYPE MEMS SUR DES SUBSTRATS EN GaN COMPORTANT DES COMPOSANTS ELECTRONIQUES DE PUISSANCE 审中-公开
    VERFAHREN ZUR INTEGRATION VON MEMS-MIKROSCHALTERN AUF GAN-SUBSTRATEN MIT LEISTUNGSELEKTRONIKBAUTEILEN

    公开(公告)号：EP2566807A1

    公开(公告)日：2013-03-13

    申请号：EP10718178.6

    申请日：2010-05-07

    Applicant: THALES

    Inventor： ZIAEI, Afshin ,  LE BAILLIF, Matthieu

    IPC: B81C1/00

    CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81C2203/0735 ,  H01H59/0009

    Abstract: The invention relates to the general field of methods for producing electronic modules including electronic power components (3) made on a gallium nitride (GaN) substrate (1), as well as electrostatically activated MEMS (Micro Electro-Mechanical System) microswitches (10). The electronic components and the microswitches according to the invention are produced on a single gallium nitride substrate and the production method comprises at least the following steps: Step 1: Making power components (3) on the gallium nitride substrate; Step 2: Depositing a first common passivation layer (4) on said components and on the substrate; and Step 3: Making microswitches (10) on said substrate.

    Abstract translation: 电子模块的制造方法一方面包括制造在由氮化镓（GaN）制成的衬底上的功率电子部件，另一方面，使用使用MEMS（微机电系统）型的静电激活的微型开关 。 电子元件和微型开关在单个氮化镓衬底上制造，并且制造方法至少包括以下步骤：在氮化镓衬底上制造功率元件; 在所述组件和衬底上沉积第一公共钝化层; 所述基板上的微型开关的制造。

    MIKROMECHANISCHES BAUTEIL MIT GETEMPERTER METALLSCHICHT UND VERFAHREN ZU DESSEN HERSTELLUNG
    224.
    发明公开
    MIKROMECHANISCHES BAUTEIL MIT GETEMPERTER METALLSCHICHT UND VERFAHREN ZU DESSEN HERSTELLUNG 有权
    微机械构件具有回火金属层与方法研究

    公开(公告)号：EP2280907A2

    公开(公告)日：2011-02-09

    申请号：EP09737935.8

    申请日：2009-03-13

    Applicant: Robert Bosch GmbH

    Inventor： BUCK, Thomas ,  STUMBER, Michael

    IPC: B81C1/00

    CPC classification number: B81C1/00158 ,  B81B2201/016 ,  B81B2201/0264 ,  B81C1/00666 ,  H01H59/0009

    Abstract: The invention relates to a method for producing micromechanical components, wherein a substrate (1) having at least one metal layer (3, 6, 7, 7') and a sacrificial layer (5, 5') comprising SiGe are structured and the sacrificial layer (5, 5') is at least partially removed by etching with a fluorine-containing compound such as ClF
    3 , the substrate (1) which carries the sacrificial layer (5, 5') and the metal layer (3, 6, 7, 7') being tempered at a temperature of ≥ 100 °C to ≤ 400 °C prior to the sacrificial layer (5, 5') being etched. The material of the metal layer (3, 6, 7, 7') can comprise aluminum. The invention further relates to a micromechanical component which comprises a metal layer (3, 6, 7, 7'), the material of the metal layer having a polycrystalline structure and ≥ 90% of the crystallites having a size of ≥ 1 μm to ≤ 100 μm. The invention also relates to the use of said micromechanical components as pressure sensors, high-frequency switches or as varactor.

    MEMS switch with set and latch electrodes
    225.
    发明公开
    MEMS switch with set and latch electrodes 审中-公开
    MEMS-schalter mit Setz- und latch-Elektroden

    公开(公告)号：EP2210857A1

    公开(公告)日：2010-07-28

    申请号：EP10162705.7

    申请日：2005-11-16

    Applicant: QUALCOMM MEMS Technologies, Inc.

    Inventor： Chui, Clarence

    IPC: B81B3/00 ,  H01H59/00

    CPC classification number: G02B26/001 ,  B81B3/0086 ,  B81B2201/016 ,  B81B2201/042 ,  H01H59/0009

    Abstract: A MEMS device is electrically actuated with a voltage placed across a first electrode (702) and a moveable material (714). The device may be maintained in an actuated state by latch electrodes (730a, 730b) that are separate from the first electrode

    Abstract translation: MEMS器件通过跨过第一电极（702）和可移动材料（714）放置的电压来电致动。 可以通过与第一电极分离的闩锁电极（730a，730b）将装置保持在致动状态

    DEVICES HAVING VERTICALLY-DISPOSED NANOFABRIC ARTICLES AND METHODS OF MAKING THE SAME
    226.
    发明授权
    DEVICES HAVING VERTICALLY-DISPOSED NANOFABRIC ARTICLES AND METHODS OF MAKING THE SAME 有权
    带竖设施排列的纳米织物制品及其制造方法

    公开(公告)号：EP1593164B1

    公开(公告)日：2010-06-30

    申请号：EP04710662.0

    申请日：2004-02-12

    Applicant: Nantero, Inc.

    Inventor： JAIPRAKASH, Venkatachalam, C. ,  WARD, Jonathan, W. ,  RUECKES, Thomas ,  SEGAL, Brent, M.

    IPC: G11C23/00 ,  G11C13/02 ,  G11C14/00 ,  H01H59/00 ,  B81B3/00

    CPC classification number: G11C23/00 ,  B81B2201/016 ,  B81B2203/0127 ,  B81C1/00142 ,  B81C2201/0109 ,  B82Y10/00 ,  G11C13/025 ,  G11C14/00 ,  G11C2213/16 ,  G11C2213/77 ,  G11C2213/81 ,  H01H1/0094

    Abstract: Electro-mechanical switches and memory cells using vertically-disposed nanofabric articles and methods of making the same are described. An electro-mechanical device, includes a structure having a major horizontal surface and a channel formed therein. A conductive trace is in the channel; and a nanotube article vertically suspended in the channel, in spaced relation to a vertical wall of the channel. The article is electro-mechanically deflectable in a horizontal direction toward the conductive trace. Under certain embodiments, the vertically suspended extent of the nanotube article is defined by a thin film process. Under certain embodiments, the vertically suspended extent of the nanotube article is about 50 nanometers or less. Under certain embodiments, the nanotube article is clamped with a conducting material disposed in porous spaces between some nanotubes of the nanotube article. Under certain embodiments, the nanotube article is formed from a porous nanofabric. Under certain embodiments, the nanotube article is electromechanically deflectable into contact with the conductive trace and the contact is either a volatile state or non-volatile state depending on the device construction. Under certain embodiments, the vertically oriented device is arranged into various forms of three-trace devices. Under certain embodiments, the channel may be used for multiple independent devices, or for devices that share a common electrode.

    MICRO-COMMUTATEUR ELECTROSTATIQUE POUR COMPOSANT A FAIBLE TENSION D'ACTIONNEMENT
    227.
    发明授权
    MICRO-COMMUTATEUR ELECTROSTATIQUE POUR COMPOSANT A FAIBLE TENSION D'ACTIONNEMENT 有权
    具有低电压工作的微观力学静态开关

    公开(公告)号：EP1565921B1

    公开(公告)日：2006-07-26

    申请号：EP03786073.1

    申请日：2003-11-27

    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

    Inventor： ROBERT, Philippe

    IPC: H01H59/00

    CPC classification number: H01H59/0009 ,  B81B3/001 ,  B81B2201/016 ,  B81B2203/04 ,  H01H2059/0018 ,  H01H2059/0072

    Abstract: The invention relates to an electrostatic microswitch which is intended to connect electrically two strip conductors which are disposed on an insulating support (21). According to the invention, the two strip conductors are connected electrically by conducting means (38) which are provided in the central part of deformable means (28) which can be deformed in relation to the support under the effect of an electrostatic force generated by control electrodes (25, 48; 26, 58). The control electrodes are distributed facing one another on the deformable means and the support, such as to form capacitive means around the aforementioned conducting means. Moreover, the control electrodes are associated with insulating stop elements (35, 36) which are provided in order to prevent a short circuit between electrodes of the capacitive means during the deformation of the deformable means. The distance between the deformable means and the ends of the strip conductors is less than or equal to the distance between the insulating stop elements associated with the control electrodes and the control electrodes located opposite.

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