公开(公告)号：US10342884B2

公开(公告)日：2019-07-09

申请号：US15785687

申请日：2017-10-17

Applicant: Sensor Electronic Technology, Inc.

Inventor： Timothy James Bettles ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: A61L2/10

Abstract: A solution for disinfecting flowable products, such as liquids, suspensions, creams, colloids, emulsions, powders, and/or the like, as well as accessories and products relating thereto, such as containers, caps, brushes, applicators, and/or the like, using ultraviolet radiation is provided. In an embodiment, an ultraviolet impermeable cap is configured to enclose a volume corresponding to a flowable product. At least one ultraviolet radiation source can be mounted on the cap and be configured to generate ultraviolet radiation for disinfecting the enclosed area. The ultraviolet radiation source can be configured to only generate ultraviolet radiation when the volume is enclosed by the ultraviolet impermeable cap.

公开(公告)号：US10337917B2

公开(公告)日：2019-07-02

申请号：US15471601

申请日：2017-03-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Yuri Bilenko ,  Michael Shur ,  Alexander Dobrinsky

IPC: H01J1/62 ,  G01J3/12 ,  G01J3/02 ,  G01J3/10 ,  G01N21/25 ,  G01N21/31 ,  G01N21/64 ,  G01N21/78

Abstract: An adjustable multi-wavelength lamp is described. The lamp can include a plurality of emitters. The emitters can include at least one ultraviolet emitter, at least one visible light emitter, and at least one infrared emitter. The lamp can include a control system for controlling operation of the plurality of emitters. The control system can be configured to selectively deliver power to any combination of one or more of the plurality of emitters to generate light approximating a target spectral distribution of intensity.

公开(公告)号：US10319881B2

公开(公告)日：2019-06-11

申请号：US15390575

申请日：2016-12-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/62 ,  G06F17/50 ,  H01L33/00 ,  H01L33/20 ,  H01L33/10

Abstract: A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The set of large roughness components can include a series of truncated shapes. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.

公开(公告)号：US10297460B2

公开(公告)日：2019-05-21

申请号：US15496887

申请日：2017-04-25

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Jinwei Yang ,  Wenhong Sun ,  Rakesh Jain ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/15 ,  H01L31/0256 ,  H01L21/308 ,  H01L29/66 ,  H01L21/02 ,  H01L33/12 ,  H01L29/20 ,  H01L33/00

Abstract: A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.

公开(公告)号：US10245338B2

公开(公告)日：2019-04-02

申请号：US15387583

申请日：2016-12-21

Applicant: Sensor Electronic Technology, Inc.

Inventor： Saulius Smetona ,  Alexander Dobrinsky ,  Yuri Bilenko ,  Michael Shur

IPC: A61L2/10 ,  H05B33/08 ,  H05B37/02

Abstract: A solution for generating ultraviolet diffusive radiation is provided. A diffusive ultraviolet radiation illuminator includes at least one ultraviolet radiation source located within a reflective cavity that includes a plurality of surfaces. At least one of the plurality of surfaces can be configured to diffusively reflect at least 70% of the ultraviolet radiation and at least one of the plurality of surfaces can be configured to transmit at least 30% of the ultraviolet radiation and reflect at least 10% of the ultraviolet radiation.

公开(公告)号：US10237929B2

公开(公告)日：2019-03-19

申请号：US15492351

申请日：2017-04-20

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Alexander Dobrinsky

IPC: H05B33/08 ,  H01L25/16 ,  H01L33/60

Abstract: A solid-state light source (SSLS) with an integrated electronic modulator is described. A device can include a SSLS having an active p-n junction region is formed within the SSLS for electron-hole pair recombination and light emission. the active p-n junction region can include a n-type semiconductor layer, a p-type semiconductor layer and a light generating structure formed there between. A pair of current supply electrodes can be formed to receive a drive current from a current supply source that drives the SSLS. A field-effect transistor (FET) modulator can be monolithically integrated with the SSLS for modulation thereof. The FET modulator can receive a modulation voltage from a modulation voltage source. The modulation voltage includes voltage pulses having a pulse amplitude and polarity to turn on and off current flowing through the FET modulator. These voltage pulses enable the FET modulator to control the drive current supplied to the SSLS.

公开(公告)号：US10199535B2

公开(公告)日：2019-02-05

申请号：US15391994

申请日：2016-12-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Jinwei Yang ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/12 ,  H01L33/32 ,  H01L33/06 ,  H01L33/46 ,  H01L33/00 ,  C30B29/40 ,  G06F17/50 ,  H01L33/14 ,  H01L33/40

Abstract: A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa. The buffer structure can be grown using a set of growth parameters selected to achieve the target effective lattice constant a, control stresses present during growth of the buffer structure, and/or control stresses present after the semiconductor structure has cooled.

公开(公告)号：US10197750B2

公开(公告)日：2019-02-05

申请号：US15854332

申请日：2017-12-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: G02B6/42 ,  G02B6/10 ,  G02B6/136 ,  G02B6/122 ,  F21V8/00 ,  G02B6/34 ,  G02B6/12

Abstract: A light guiding structure is provided. The structure includes an anodized aluminum oxide (AAO) layer and a fluoropolymer layer located immediately adjacent to a surface of the AAO layer. Light propagates through the AAO layer in a direction substantially parallel to the fluoropolymer layer. An optoelectronic device can be coupled to a surface of the AAO layer, and emit/sense light propagating through the AAO layer. Solutions for fabricating the light guiding structure are also described.

公开(公告)号：US10178726B2

公开(公告)日：2019-01-08

申请号：US15856625

申请日：2017-12-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Alexander Dobrinsky ,  Maxim S. Shatalov

IPC: H05B33/08 ,  H01L27/15 ,  H05B37/02

Abstract: A solid-state light source (SSLS) structure with integrated control. In one embodiment, a SSLS control circuit can be integrated with a SSLS structure formed from a multiple of SSLSs. The SSLS control circuit controls the total operating current of the SSLS structure to within a predetermined total operating current limit by selectively limiting the current in individual SSLSs or in groups of SSLSs as each are turned on according to a sequential order. The SSLS control circuit limits the current in each of the individual SSLSs or groups of SSLSs as function of the saturation current of the SSLSs. In one embodiment, the individual SSLSs or groups of SSLSs has a turn on voltage corresponding to a voltage causing a preceding SSLS or group of SSLSs in the sequential order to saturate current.

公开(公告)号：US20180346349A1

公开(公告)日：2018-12-06

申请号：US16052980

申请日：2018-08-02

Applicant: Sensor Electronic Technology, Inc.

Inventor： Saulius Smetona ,  Timothy James Bettles ,  Igor Agafonov ,  Ignas Gaska ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: C02F1/32 ,  C02F1/00

CPC classification number: C02F1/325 ,  C02F1/001 ,  C02F1/008 ,  C02F2201/3222 ,  C02F2201/3226 ,  C02F2201/3227 ,  C02F2201/3228 ,  C02F2201/326 ,  C02F2201/328 ,  C02F2209/001 ,  C02F2209/005 ,  C02F2209/05 ,  C02F2209/11 ,  C02F2209/40 ,  C02F2301/026 ,  C02F2303/04

Abstract: A solution for treating a fluid, such as water, is provided. An ultraviolet transparency of a fluid can be determined before or as the fluid enters a disinfection chamber. In the disinfection chamber, the fluid can be irradiated by ultraviolet radiation to harm microorganisms that may be present in the fluid. One or more attributes of the disinfection chamber, fluid flow, and/or ultraviolet radiation can be adjusted based on the transparency to provide more efficient irradiation and/or higher disinfection rates. In addition, various attributes of the disinfection chamber, such as the position of the inlet(s) and outlet(s), the shape of the disinfection chamber, and other attributes of the disinfection chamber can be utilized to create a turbulent flow of the fluid within the disinfection chamber to promote mixing and improve uniform ultraviolet exposure.