公开(公告)号：US4498225A

公开(公告)日：1985-02-12

申请号：US522768

申请日：1983-10-20

Applicant: William A. Gutierrez ,  Herbert L. Wilson

Inventor： William A. Gutierrez ,  Herbert L. Wilson

IPC: H01J1/34 ,  H01J9/12 ,  H01L31/18

CPC classification number: H01J1/34 ,  H01J9/12 ,  H01J2201/3423

Abstract: A method of forming a variable sensitivity transmission mode negative eleon affinity (NEA) photocathode in which the sensitivity of the photocathode to white or monochromatic light can be varied by varying the backsurface recombination velocity of the photoemitting material with an electric field. The basic structure of the photocathode is comprised of a Group III-V element photoemitter on a larger bandgap Group III-V element window substrate.

Abstract translation: 形成可变灵敏度透射模式负电子亲合力（NEA）光电阴极的方法，其中光电阴极对白色或单色光的灵敏度可以通过用电场改变光发射材料的背表面复合速度来改变。 光电阴极的基本结构由III-V族III族元素光电发射器组成。

公开(公告)号：US4096511A

公开(公告)日：1978-06-20

申请号：US309043

申请日：1972-11-28

Applicant: Philip Gurnell ,  Michael Charles Rowland

Inventor： Philip Gurnell ,  Michael Charles Rowland

IPC: H01J1/34 ,  H01J9/12 ,  H01L27/14

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J2201/3423

Abstract: A transmission photodetector operable at wavelengths greater than 0.86 micrometers comprising a substrate transparent to the radiation to be detected, at least one epitaxial intermediate layer comprising (Ga.sub.1-x Al.sub.x).sub.1-y In.sub.y As and an epitaxial p-type Ga.sub.1-y In.sub.y As detector layer. The said one intermediate layer may be p-type. If desired a second epitaxial intermediate layer comprising (Ga.sub.1-x Al.sub.x).sub.1-z In.sub.z As may be provided between the substrate and the said one intermediate layer. In the foregoing 0

Abstract translation: 透射光电探测器，其工作波长大于0.86微米，包括对要被检测的辐射透明的衬底，至少一个外延中间层，包括（Ga1-xAlx）1-yInAs和外延p型Ga1-yInYAs检测器层。 所述一个中间层可以是p型。 如果需要，可以在衬底和所述一个中间层之间提供包含（Ga1-xAlx）1-zInzAs的第二外延中间层。 在上述0

公开(公告)号：US4015284A

公开(公告)日：1977-03-29

申请号：US647761

申请日：1976-01-09

Applicant: Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

Inventor： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC: H01J1/34 ,  H01J9/12 ,  H01L29/161 ,  H01L27/14

CPC classification number: H01J1/34 ,  H01J9/12 ,  H01J2201/3423

Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.

公开(公告)号：US4005465A

公开(公告)日：1977-01-25

申请号：US582545

申请日：1975-05-30

Applicant: Brian S. Miller

Inventor： Brian S. Miller

IPC: H01J1/312 ,  H01J1/34 ,  H01L49/02 ,  H01L27/14

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J1/34 ,  H01J2201/3423

Abstract: A method of producing a tunnel emitter photocathode consisting of heating aemiconductor layer and then depositing a layer of aluminum oxide on one side thereof at a rapid rate and then baking out the wafer in a hydrogen gas atmosphere. After depositing electrical contacts on each side of the wafer, a metallic emitter layer is evaporated over the aluminum oxide layer with the metallic emitter layer treated with a low work function material such as cesium and oxygen to further increase the emission efficiency.

Abstract translation: 一种制造隧道发射光电阴极的方法，该方法包括加热半导体层，然后以一定速度沉积一侧的氧化铝层，然后在氢气气氛中烘烤晶片。 在晶片的每一侧沉积电触点之后，金属发射极层在氧化铝层上蒸发，金属发射极层用低功函数材料如铯和氧处理，以进一步提高发射效率。

公开(公告)号：US4000503A

公开(公告)日：1976-12-28

申请号：US646382

申请日：1976-01-02

Applicant: Herbert F. Matare

Inventor： Herbert F. Matare

IPC: H01J1/34 ,  H01J29/38 ,  H01L29/161 ,  H01L27/14

CPC classification number: H01J1/34 ,  H01J29/38 ,  H01J2201/3423

Abstract: A cold cathode for an image-type tube such as a vidicon. The cathode features a negative electron affinity surface and a field enhanced electron ejection method. The photons generate electron-hole pairs in a compound semi-conductor structure having Group III and Group V compounds to form a heterojunction.

Abstract translation: 用于图像型管例如摄像机的冷阴极。 阴极具有负电子亲和力表面和场增强电子喷射方法。 光子在具有III族和V族化合物的化合物半导体结构中产生电子 - 空穴对以形成异质结。

公开(公告)号：US3992233A

公开(公告)日：1976-11-16

申请号：US578976

申请日：1975-05-19

Applicant: Robin Frederick Charles Farrow

Inventor： Robin Frederick Charles Farrow

IPC: H01J1/34 ,  H01J9/12 ,  H01J9/20 ,  H01L21/20 ,  H01L21/203 ,  H01L21/263 ,  H01L21/324 ,  H01L31/00

CPC classification number: H01J9/20 ,  H01J1/34 ,  H01J9/12 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02631 ,  H01L21/02661 ,  H01L21/2633 ,  H01L21/3245 ,  H01J2201/3423 ,  Y10S148/065 ,  Y10S148/12 ,  Y10S438/971

Abstract: Group III-V compound substrates are heat cleaned under vacuum conditions by heating above their congruent temperature and subjecting the substrate to at least one molecular beam of the material preferentially evaporating from the substrate thereby maintaining surface stoichiometry. Surfaces so cleaned may then have an epitaxial layer grown thereon under similiar conditions from molecular beams. Alternatively the cleaned surface may be coated with cesium and oxygen to form a photocathode.

Abstract translation: III-V族化合物基材在真空条件下通过加热高于其一致温度进行热清洗，并对基材进行至少一种材料的分子束优先从基材蒸发，从而保持表面化学计量。 然后如此清洁的表面可以在类似条件下在分子束上具有在其上生长的外延层。 或者，清洁的表面可以涂覆有铯和氧以形成光电阴极。

公开(公告)号：US3981755A

公开(公告)日：1976-09-21

申请号：US534205

申请日：1974-12-19

Applicant: Jonathan Paul Gowers

Inventor： Jonathan Paul Gowers

IPC: H01J9/12 ,  H01L7/36 ,  H01L7/38

CPC classification number: H01J9/12 ,  H01J2201/3423 ,  Y10S148/065 ,  Y10S148/072 ,  Y10S148/12 ,  Y10S148/135

Abstract: A photocathode structure containing a photocathode material, comprising a plate of single crystal gallium indium phosphide having major surfaces and relative proportions of gallium and indium such that the lattice parameter thereof is substantially the same as that of said photocathode material, and, an epitaxial layer of photocathode material located on a first said major surface of said crystal, the thickness of said layer of photocathode material being of the order of the diffusion length of electrons therein and at least part of a second said major surface of the gallium indium phosphide plate being substantially free from contact by solid material.

Abstract translation: 一种含有光电阴极材料的光电阴极结构，其包含具有主要表面和镓和铟的相对比例的单晶镓铟磷化物的平板，使得其晶格参数与所述光电阴极材料的晶格参数基本相同;以及外延层 位于所述晶体的第一所述主表面上的光电阴极材料，所述光电阴极材料层的厚度为其内的电子的扩散长度的量级，并且所述磷酸铟镓板的至少一部分所述主表面基本上是 无固体材料接触。

公开(公告)号：US3978360A

公开(公告)日：1976-08-31

申请号：US536785

申请日：1974-12-27

Applicant: James C. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Fletcher ,  Lawrence William James

Inventor： James C. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Fletcher ,  Lawrence William James

IPC: H01J1/34 ,  H01J39/06 ,  H01L31/10

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: An increase in the quantum efficiency of a III-V photocathode is achieved by doping its semiconductor material with an acceptor and nitrogen, a column-V isoelectronic element, that introduces a spatially localized energy level just below the conduction band similar to a donor level to which optical transitions can occur. This increases the absorption coefficient, .alpha., without compensation of the acceptor dopant. A layer of a suitable I-V, I-VI or I-VII compound is included as an activation layer on the electron emission side to lower the work function of the photocathode.

公开(公告)号：US3959037A

公开(公告)日：1976-05-25

申请号：US573290

申请日：1975-04-30

Applicant: William A. Gutierrez ,  Herbert L. Wilson

Inventor： William A. Gutierrez ,  Herbert L. Wilson

IPC: H01J1/34 ,  H01L7/36 ,  H01L7/38 ,  H01L7/54

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: Transmission mode negative electron affinity gallium arsenide (GaAs) photthodes and dynodes with a technique for the fabrication thereof, utilizing multilayers of GaAs and gallium aluminum arsenide (GaAlAs) wherein the GaAs layers serve as the emitting layer and as an intermediate construction layer, and the GaAlAs layers serve as a passivating window and as an etch stop layer.

Abstract translation: 使用其中GaAs层用作发光层和作为中间构造层的GaAs和砷化镓砷化镓（GaAlAs）的多层的透射模式负电子亲和势砷化镓（GaAs）光电阴极和具有制造技术的倍增极， GaAlAs层用作钝化窗口和作为蚀刻停止层。

公开(公告)号：US3951698A

公开(公告)日：1976-04-20

申请号：US527181

申请日：1974-11-25

Applicant: Herbert L. Wilson ,  William A. Gutierrez

Inventor： Herbert L. Wilson ,  William A. Gutierrez

IPC: H01J1/34 ,  H01J31/50 ,  H01L21/36

CPC classification number: H01J31/50 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2231/5001 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/119 ,  Y10S148/12

Abstract: A photon sensing device utilizing a III-V negative electron affinity photthode grown on a window substrate support which simultaneously serves as a support and growth surface for the epitaxial growth of suitable cathode layers as well as the input window for the device.

Abstract translation: 利用生长在窗户基板支架上的III-V负电子亲和光电阴极的光子感测装置，其同时用作适当阴极层的外延生长的支撑和生长表面以及装置的输入窗口。