公开(公告)号：US11378827B2

公开(公告)日：2022-07-05

申请号：US17083525

申请日：2020-10-29

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Stephane Monfray ,  Frédéric Boeuf

IPC: G02F1/035 ,  G02F1/025 ,  H01L29/66

Abstract: A photonic device includes a first region having a first doping type, and a second region having a second doping type, where the first region and the second region contact to form a vertical PN junction. The first region includes a silicon germanium (SiGe) region having a gradual germanium concentration.

公开(公告)号：US20220199632A1

公开(公告)日：2022-06-23

申请号：US17540029

申请日：2021-12-01

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics (Rousset) SAS

Inventor： Abderrezak Marzaki ,  Mathieu Lisart ,  Benoit Froment

IPC: H01L27/112

Abstract: The present description concerns a ROM including at least one first rewritable memory cell.

公开(公告)号：US20220190140A1

公开(公告)日：2022-06-16

申请号：US17685780

申请日：2022-03-03

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Alexis GAUTHIER ,  Pascal CHEVALIER

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L29/732

Abstract: A bipolar transistor includes a collector. The collector is formed by: a first portion of the collector which extends under an insulating trench, and a second portion of the collector which crosses through the insulating trench. The first and second portions of the collector are in physical contact.

公开(公告)号：US20220181390A1

公开(公告)日：2022-06-09

申请号：US17543004

申请日：2021-12-06

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Thierry BERGER ,  Stephane ALLEGRET-MARET

IPC: H01L27/30 ,  H01L51/42 ,  H01L51/44

Abstract: A pixel includes a first electrode layer on an exposed surface of an interconnection structure and in contact with a conductive element of the interconnection structure. An insulating layer extends over the first electrode layer and includes opening crossing through the insulating layer to the first electrode layer. A second electrode layer is on top of and in contact with the first electrode layer and the insulating layer in the opening. A film configured to convert photons into electron-hole pairs is on the insulating layer, the second electrode layer and filling the opening. A third electrode layer covers the film.

公开(公告)号：US11348834B2

公开(公告)日：2022-05-31

申请号：US16909333

申请日：2020-06-23

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Gregory Avenier ,  Alexis Gauthier ,  Pascal Chevalier

IPC: H01L21/20 ,  H01L21/8222 ,  H01L27/06 ,  H01L29/66 ,  H01L29/737 ,  H01L29/93 ,  H01L21/3105 ,  H01L21/8249

Abstract: A circuit includes at least one bipolar transistor and at least one variable capacitance diode. The circuit is fabricated using a method whereby the bipolar transistor and variable capacitance diode are jointly produced on a common substrate.

公开(公告)号：US11336853B2

公开(公告)日：2022-05-17

申请号：US17063192

申请日：2020-10-05

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics (Research & Development) Limited

Inventor： Raul Andres Bianchi ,  Matteo Maria Vignetti ,  Bruce Rae

IPC: H04N5/3745 ,  H04N5/378

Abstract: The present disclosure relates to a device that includes a photodiode having a first terminal that is coupled by a resistor to a first rail configured to receive a high supply potential and a second terminal that is coupled by a switch to a second rail configured to receive a reference potential. A read circuit is configured to provide a pulse when the photodiode enters into avalanche, and a control circuit is configured to control an opening of the switch in response to a beginning of the pulse and to control a closing of the switch in response to an end of the pulse.

公开(公告)号：US20220149151A1

公开(公告)日：2022-05-12

申请号：US17584593

申请日：2022-01-26

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis GAUTHIER ,  Pascal CHEVALIER ,  Gregory AVENIER

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/732

Abstract: A device including a transistor is fabricated by forming a first part of a first region of the transistor through the implantation of dopants through a first opening. The second region of the transistor is then formed in the first opening by epitaxy.

公开(公告)号：US11327346B2

公开(公告)日：2022-05-10

申请号：US16539503

申请日：2019-08-13

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles Baudot

IPC: G02F1/025 ,  G02F1/01 ,  G02F1/017 ,  G02F1/225 ,  H01L21/02 ,  B82Y20/00

Abstract: In one embodiment, an electro-optical modulator includes a waveguide having a first major surface and a second major surface opposite the first major surface. A cavity is disposed in the waveguide. Multiple quantum wells are disposed in the cavity.

公开(公告)号：US20220130728A1

公开(公告)日：2022-04-28

申请号：US17568500

申请日：2022-01-04

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Pascal CHEVALIER ,  Alexis GAUTHIER ,  Gregory AVENIER

IPC: H01L21/8222 ,  H01L21/265 ,  H01L27/06 ,  H01L29/06 ,  H01L29/66 ,  H01L29/737 ,  H01L29/93

Abstract: At least one bipolar transistor and at least one variable capacitance diode are jointly produced by a method on a common substrate.

公开(公告)号：US20220122969A1

公开(公告)日：2022-04-21

申请号：US17503621

申请日：2021-10-18

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Edoardo BREZZA ,  Alexis GAUTHIER

IPC: H01L27/082 ,  H01L29/737 ,  H01L21/265 ,  H01L21/225 ,  H01L29/66 ,  H01L21/8222

Abstract: A bipolar transistor includes a collector region having a first doped portion located in a substrate and a second doped portion covering and in contact with an area of the first doped portion. The collector region has a doping profile having a peak in the first portion and a decrease from this peak up to in the second portion.