公开(公告)号：US06680489B1

公开(公告)日：2004-01-20

申请号：US09557165

申请日：2000-04-25

Applicant: George R. Brandes ,  Chris S. Christos ,  Xueping Xu

Inventor： George R. Brandes ,  Chris S. Christos ,  Xueping Xu

IPC: H01L310312

CPC classification number: H01L28/20 ,  H01J1/3042 ,  H01J2201/30403 ,  H01J2201/319 ,  H01J2329/00 ,  H01L31/03765 ,  Y02E10/548

Abstract: Amorphous silicon carbide thin film structures, including: protective coatings for windows in infrared process stream monitoring systems and sensor domes, heated windows, electromagnetic interference shielding members and integrated micromachined sensors; high-temperature sensors and circuits; and diffusion barrier layers in VLSI circuits. The amorphous silicon carbide thin film structures are readily formed, e.g., by sputtering at low temperatures.

Abstract translation: 无定形碳化硅薄膜结构，包括：红外线工艺流监测系统和传感器圆顶中的窗户保护涂层，加热窗，电磁干扰屏蔽构件和集成微机械传感器; 高温传感器和电路; 和VLSI电路中的扩散阻挡层。 非晶碳化硅薄膜结构容易形成，例如通过在低温下溅射。

公开(公告)号：US06565403B1

公开(公告)日：2003-05-20

申请号：US09555847

申请日：2000-06-05

Applicant: Daniel Irwin Amey, Jr. ,  Robert Joseph Bouchard ,  Syed Ismat Ullah Shah

Inventor： Daniel Irwin Amey, Jr. ,  Robert Joseph Bouchard ,  Syed Ismat Ullah Shah

IPC: H01J902

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30403

Abstract: Patterned ion-bombarded graphite electron emitters are disclosed as well as processes for producing them. The electron emitters are produced by forming a layer of composite of graphite particles and glass on a substrate then bombarding the composite with an ion beam. The electron emitters are useful in field emitter cathode assemblies which are fabricated into flat panel displays.

Abstract translation: 公开了图案化的离子轰击的石墨电子发射体以及它们的制造方法。 通过在衬底上形成石墨颗粒和玻璃的复合材料层，然后用离子束轰击复合材料来制造电子发射体。 电子发射器在制造成平板显示器的场发射极阴极组件中是有用的。

公开(公告)号：US20030015958A1

公开(公告)日：2003-01-23

申请号：US10243830

申请日：2002-09-16

Inventor： Ichiro Saito ,  Koichi Iida ,  Tokiko Takahashi

IPC: H01J001/62

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2329/00 ,  Y10S977/773

Abstract: The present invention provides an electron emission device assured to emit electrons without requiring film thickness control in the order of submicrons and production method of the electron emission device as well as a display apparatus using the electron emission device. The electron emission device includes a cathode electrode consisting of conductive fine particles adhered directly onto a substrate and electrons are emitted from these conductive fine particles when a predetermined electric field is applied.

Abstract translation: 本发明提供了一种电子发射装置，其以电子发射装置的亚微米级和制造方法以及使用该电子发射装置的显示装置而不需要薄膜厚度控制而发射电子。 电子发射装置包括由直接粘附到基板上的导电细颗粒组成的阴极电极，并且当施加预定电场时，从这些导电细颗粒发射电子。

公开(公告)号：US06452328B1

公开(公告)日：2002-09-17

申请号：US09232847

申请日：1999-01-19

Applicant: Ichiro Saito ,  Koichi Iida ,  Tokiko Takahashi

Inventor： Ichiro Saito ,  Koichi Iida ,  Tokiko Takahashi

IPC: H01J3115

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2329/00 ,  Y10S977/773

Abstract: The present invention provides an electron emission device assured to emit electrons without requiring film thickness control on the order of submicrons and a production method of the electron emission device as well as a display apparatus using the electron emission device. The electron emission device includes a cathode electrode consisting of conductive fine particles adhered directly onto a substrate and electrons are emitted from these conductive fine particles when a predetermined electric field is applied.

Abstract translation: 本发明提供一种确保发射电子而不需要亚微米级的薄膜厚度控制的电子发射装置和电子发射装置的制造方法以及使用该电子发射装置的显示装置。 电子发射装置包括由直接粘附到基板上的导电细颗粒组成的阴极电极，并且当施加预定电场时，从这些导电细颗粒发射电子。

公开(公告)号：US06423239B1

公开(公告)日：2002-07-23

申请号：US09591192

申请日：2000-06-08

Applicant: David A. Cathey ,  Kevin Tjaden

Inventor： David A. Cathey ,  Kevin Tjaden

IPC: H01J900

CPC classification number: H01J9/025 ,  H01J2201/30403

Abstract: A method for fabricating sharp asperities. A substrate is provided which has a mask layer disposed thereon, and a layer of micro-spheres is disposed superjacent the mask layer. The micro-spheres are for patterning the mask layer. Portions of the mask layer are selectively removed, thereby forming circular masks. The substrate is isotropically etched, thereby creating sharp asperities.

Abstract translation: 一种制造尖锐凹凸的方法。 提供了具有设置在其上的掩模层的基板，并且在该掩模层的上方布置一层微球。 微球用于图案化掩模层。 选择性地去除掩模层的一部分，从而形成圆形掩模。 基板被各向同性地蚀刻，从而产生尖锐的凹凸。

公开(公告)号：US06400091B1

公开(公告)日：2002-06-04

申请号：US09525546

申请日：2000-03-14

Applicant: Masahiro Deguchi ,  Makoto Kitabatake ,  Kanji Imai ,  Tomohiro Sekiguchi ,  Hideo Kurokawa ,  Keisuke Koga ,  Tetsuya Shiratori ,  Toru Kawase

Inventor： Masahiro Deguchi ,  Makoto Kitabatake ,  Kanji Imai ,  Tomohiro Sekiguchi ,  Hideo Kurokawa ,  Keisuke Koga ,  Tetsuya Shiratori ,  Toru Kawase

IPC: G09G310

CPC classification number: B82Y10/00 ,  H01J3/021 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/30469 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/901 ,  Y10S977/939

Abstract: An electron emission element of the present invention includes a substrate, a cathode formed on the substrate, an anode opposed to the cathode, an electron emission member disposed on the cathode, and a control electrode disposed between the cathode and the anode. During operation, the electric field intensity immediately above the electron emission member is lower than that between the control electrode and the anode. Alternatively, the spatial average of an electric field intensity between the electron emission member and the control electrode is smaller than that between the control electrode and the anode.

Abstract translation: 本发明的电子发射元件包括基板，形成在基板上的阴极，与阴极相对的阳极，设置在阴极上的电子发射部件，以及设置在阴极和阳极之间的控制电极。 在操作期间，电子发射构件正上方的电场强度低于控制电极和阳极之间的电场强度。 或者，电子发射构件和控制电极之间的电场强度的空间平均值小于控制电极和阳极之间的电场强度的空间平均值。

公开(公告)号：US06339414B1

公开(公告)日：2002-01-15

申请号：US08689658

申请日：1996-08-13

Applicant: Yasuyuki Todokoro ,  Hidetoshi Suzuki

Inventor： Yasuyuki Todokoro ,  Hidetoshi Suzuki

IPC: G09G322

CPC classification number: G09G3/2011 ,  B82Y10/00 ,  G09G3/2014 ,  G09G3/22 ,  G09G2310/027 ,  G09G2310/0275 ,  G09G2320/0223 ,  H01J2201/30403 ,  H01J2201/3165 ,  H01J2329/00

Abstract: In order to cause a multi-electron source having electron emitters wired in the form of a matrix to emit electrons without any variations, there is provided an electron generating device including a multi-electron source (601) having a plurality of electron emitters (1002) wired in the form of a matrix through a plurality of data wiring layers (1004) and a plurality of scanning wiring layers (1003), and a driving circuit for driving the multi-electron source (601), the driving circuit including a first driving means (603) for applying a first voltage (Vs) to a scanning wiring layer to which an electron emitter which is to emit electrons is connected, and applying a second voltage (Vns) to a scanning wiring layer to which an electron emitter which is not to emit electrons is connected, and a second driving means (602) for applying a third voltage (Ve) to a data wiring layer to which an electron emitter which is to emit electrons is connected, and applying a fourth voltage (Vg) to a data wiring layer to which an electron emitter which is not to emit electrons is connected, wherein the second voltage (Vns) is substantially equal to the third voltage (Ve).

Abstract translation: 为了引起具有以矩阵形式布线的电子发射体发射电子而没有任何变化的多电子源，提供了一种包括具有多个电子发射体（1002）的多电子源（601）的电子发生装置 ）和通过多个数据布线层（1004）和多个扫描布线层（1003）以矩阵形式布线的驱动电路，以及用于驱动多电子源（601）的驱动电路，驱动电路包括第一 将与发射电子的电子发射体连接的扫描配线层连接第一电压（Vs）的驱动装置（603），向扫描配线层施加第二电压（Vns） 和连接发射电子的第二电压（Vg）的第二驱动装置（602），用于向连接发射电子发射体的数据布线层施加第三电压（Ve） 到一个数据 连接不发射电子的电子发射体的布线层，其中第二电压（Vns）基本上等于第三电压（Ve）。

公开(公告)号：US06225732B1

公开(公告)日：2001-05-01

申请号：US09437346

申请日：1999-11-09

Applicant: Kishore K. Chakvorty ,  Swayambu Ramani

Inventor： Kishore K. Chakvorty ,  Swayambu Ramani

IPC: H01J102

CPC classification number: H01J3/022 ,  H01J1/30 ,  H01J9/025 ,  H01J9/14 ,  H01J2201/30403 ,  H01J2329/00

Abstract: A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate. The cathodic structure includes a row metal composed of strips of aluminum overlain by a layer of cladding material. The use of aluminum and cladding material to form row metal gives row metal segments which are highly conductive due to the high conductivity of aluminum. By using a suitable cladding material and processing steps, a bond between the aluminum and the cladding material is formed which has good electrical conductivity. In one embodiment, tantalum is used as a cladding material. Tantalum forms a bond with the overlying resistive layer which has good electrical conductivity. Thus, the resulting structure has very high electrical conductivity through the aluminum layer and high conductivity into the resistive layer.

Abstract translation: 平板显示器和平板显示器的形成方法。 在一个实施例中，平板显示器包括形成在背板上的有效区域内的阴极结构。 阴极结构包括由覆盖材料层覆盖的铝条构成的行金属。 使用铝和包层材料形成行金属，由于铝的高导电性而导致高导电性的行金属片段。 通过使用合适的覆层材料和加工步骤，形成铝和包层材料之间的结合，其具有良好的导电性。 在一个实施例中，钽用作包层材料。 钽与具有良好导电性的上覆电阻层形成键。 因此，所得结构通过铝层具有非常高的导电性，并且在电阻层中具有高导电性。

公开(公告)号：US06211608B1

公开(公告)日：2001-04-03

申请号：US09096085

申请日：1998-06-11

Applicant: Kanwal K. Raina ,  James J. Alwan

Inventor： Kanwal K. Raina ,  James J. Alwan

IPC: H01J102

CPC classification number: H01J1/3044 ,  H01J31/127 ,  H01J2201/30403

Abstract: A field emission device is disclosed having a buffer layer positioned between an underlying cathode conductive layer and an overlying resistor layer. The buffer layer consists of substantially undoped amorphous silicon. Any pinhole defects or discontinuities that extend through the resistor layer terminate at the buffer layer, thereby preventing the problems otherwise caused by pinhole defects. In particular, the buffer layer prevents breakdown of the resistor layer, thereby reducing the possibility of short circuiting. The buffer layer further reduces the risk of delamination of various layers or other irregularities arising from subsequent processing steps. Also disclosed are methods of making and using the field emission device having the buffer layer.

Abstract translation: 公开了一种场致发射器件，其具有位于下面的阴极导电层和上覆电阻层之间的缓冲层。 缓冲层由基本上未掺杂的非晶硅组成。 延伸通过电阻层的任何针孔缺陷或不连续性终止于缓冲层，从而防止由针孔缺陷引起的问题。 特别地，缓冲层防止了电阻层的破坏，从而降低了短路的可能性。 缓冲层进一步降低了由后续处理步骤引起的各种层的分层或其它不规则的风险。 还公开了制造和使用具有缓冲层的场致发射器件的方法。

公开(公告)号：US6020595A

公开(公告)日：2000-02-01

申请号：US37423

申请日：1998-03-10

Applicant: Junji Itoh ,  Seigo Kanemaru

Inventor： Junji Itoh ,  Seigo Kanemaru

IPC: H01J1/304 ,  H01J3/02 ,  H01L29/06

CPC classification number: H01J3/022 ,  H01J2201/30403

Abstract: A cold electron emission device including an emitter having a protrusion having a sharp tip and disposed at a first end of a semiconductor thin film formed on an insulation substrate; a cathode electrode disposed at a second end of the semiconductor thin film; at least one gate electrode disposed between the emitter and the cathode electrode for controlling a current flowing through the semiconductor thin film; an insulating layer arranged to cover the semiconductor thin film, cathode electrode and gate electrode, except for the emitter; and a lead electrode arranged on the insulating layer such that it surrounds the tip of the emitter, thereby making it possible to achieve a cold electron emission device with reliable current stability.

Abstract translation: 一种冷电子发射装置，包括具有突起的发射极，该突起具有尖锐的尖端，并且设置在形成在绝缘基板上的半导体薄膜的第一端; 阴极，设置在所述半导体薄膜的第二端; 设置在发射极和阴极之间的至少一个栅电极，用于控制流过半导体薄膜的电流; 绝缘层，布置成覆盖半导体薄膜，阴极电极和栅电极，除了发射极; 以及布置在绝缘层上的引线电极，使得其围绕发射极的尖端，从而可以实现具有可靠电流稳定性的冷电子发射器件。