公开(公告)号：EP2489106A1

公开(公告)日：2012-08-22

申请号：EP10823920.3

申请日：2010-10-12

Applicant: Skorpios Technologies, Inc.

Inventor： DALLESASSE, John M. ,  KRASULICK, Stephen B. ,  KOZLOVSKY, William

IPC: H01S3/10

CPC classification number: H01S5/021 ,  H01S3/10053 ,  H01S5/02248 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/02446 ,  H01S5/1003 ,  H01S5/1032 ,  H01S5/141 ,  H01S5/142 ,  H01S2301/14

Abstract: A tunable laser includes a substrate comprising a silicon material and a gain medium coupled to the substrate. The gain medium includes a compound semiconductor material. The tunable laser also includes a waveguide disposed in the substrate and optically coupled to the gain medium, a first wavelength selective element characterized by a first reflectance spectrum and disposed in the substrate, and a second wavelength selective element characterized by a second reflectance spectrum and disposed in the substrate. The tunable laser further includes an optical coupler disposed in the substrate and joining the first wavelength selective element, the second wavelength selective element, and the waveguide and an output mirror.

公开(公告)号：EP3189541A1

公开(公告)日：2017-07-12

申请号：EP15837255.7

申请日：2015-09-02

Applicant: Skorpios Technologies, Inc.

Inventor： LAMBERT, Damien ,  SPANN, John ,  KRASULICK, Stephen

IPC: H01L21/60

CPC classification number: H01L21/6835 ,  G02B6/4201 ,  H01L21/0274 ,  H01L21/2007 ,  H01L21/683 ,  H01L21/76254 ,  H01L24/03 ,  H01L24/27 ,  H01L24/75 ,  H01L24/83 ,  H01L24/89 ,  H01L24/94 ,  H01L24/95 ,  H01L2221/68313 ,  H01L2221/68318 ,  H01L2221/6834 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/0362 ,  H01L2224/75305 ,  H01L2224/75315 ,  H01L2224/80201 ,  H01L2224/83001 ,  H01L2224/83203 ,  H01L2225/06593 ,  H01L2924/01014 ,  H01L2924/1032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/15738

Abstract: A transfer substrate with a compliant resin is used to bond one or more chips to a target wafer. An implant region is formed in a transfer substrate. A portion of the transfer substrate is etched to form a riser. Compliant material is applied to the transfer substrate. A chip is secured to the compliant material, wherein the chip is secured to the compliant material above the riser. The chip is bonded to a target wafer while the chip is secured to the compliant material. The transfer substrate and compliant material are removed from the chip. The transfer substrate is opaque to UV light.

Abstract translation: 使用具有柔性树脂的转移基板来将一个或多个芯片结合到目标晶圆。 注入区域形成在转移基板中。 转移衬底的一部分被蚀刻以形成立管。 合格的材料被施加到转印基材上。 芯片被固定到柔性材料，其中芯片被固定到立管上方的柔性材料。 当芯片被固定到柔性材料上时，芯片被结合到目标晶圆。 转移衬底和柔性材料从芯片上移除。 转印基材对UV光不透明。

公开(公告)号：EP2880764A4

公开(公告)日：2016-04-20

申请号：EP13827857

申请日：2013-08-05

Applicant: SKORPIOS TECHNOLOGIES INC

Inventor： KRASULICK STEPHEN B ,  CREAZZO TIMOTHY ,  JHA KALPIT ,  MARCHENA ELTON ,  MIZRAHI AMIT

IPC: H04B10/50 ,  H04B10/556

CPC classification number: H04B10/5561 ,  H04B10/07955 ,  H04B10/5053 ,  H04B10/564 ,  H04J14/0227 ,  H04L27/2096

Abstract: A method of operating a BPSK modulator includes receiving an RF signal at the BPSK modulator and splitting the RF signal into a first portion and a second portion that is inverted with respect to the first portion. The method also includes receiving the first portion at a first arm of the BPSK modulator, receiving the second portion at a second arm of the BPSK modulator, applying a first tone to the first arm of the BPSK modulator, and applying a second tone to the second arm of the BPSK modulator. The method further includes measuring a power associated with an output of the BPSK modulator and adjusting a phase applied to at least one of the first arm of the BPSK modulator or the second arm of the BPSK modulator in response to the measured power.

公开(公告)号：EP2805352A4

公开(公告)日：2015-09-09

申请号：EP13738701

申请日：2013-01-18

Applicant: SKORPIOS TECHNOLOGIES INC

Inventor： DALLESASSE JOHN ,  KRASULICK STEPHEN B ,  CREAZZO TIMOTHY ,  MARCHENA ELTON

IPC: H01L27/12 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/06

CPC classification number: H01L27/14689 ,  H01L21/76254 ,  H01L21/8221 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/12 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/15

Abstract: A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure.

公开(公告)号：EP2805352A1

公开(公告)日：2014-11-26

申请号：EP13738701.5

申请日：2013-01-18

Applicant: Skorpios Technologies, Inc.

Inventor： DALLESASSE, John ,  KRASULICK, Stephen B. ,  CREAZZO, Timothy ,  MARCHENA, Elton

IPC: H01L27/14 ,  H01L27/12

CPC classification number: H01L27/14689 ,  H01L21/76254 ,  H01L21/8221 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/12 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/15

Abstract: A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure.

Abstract translation: 制造复合半导体结构的方法包括提供包括多个硅基器件的SOI衬底，提供包括多个光子器件的化合物半导体衬底，以及切割化合物半导体衬底以提供多个光子管芯。 每个管芯包括多个光子器件中的一个或多个。 该方法还包括提供具有基底层和包括多个CMOS器件的器件层的组装衬底，将多个光子管芯安装在组装衬底的预定部分上，以及对准SOI衬底和组件衬底。 该方法还包括将SOI衬底和组件衬底接合以形成复合衬底结构，并从组合衬底结构去除组装衬底的至少基底层。

公开(公告)号：EP2751603A1

公开(公告)日：2014-07-09

申请号：EP12827040.2

申请日：2012-08-29

Applicant: Skorpios Technologies, Inc.

Inventor： MIZRAHI, Amit ,  CREAZZO, Timothy ,  MARCHENA, Elton ,  VAN ORDEN, Derek ,  KRASULICK, Stephen B

IPC: G02B6/26 ,  G02B6/42

CPC classification number: G02B6/4206 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/1223 ,  G02B6/1228 ,  G02B6/14 ,  G02B6/26 ,  G02B6/2804 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/12147 ,  H01S5/026 ,  H01S5/3013

Abstract: A waveguide coupler includes a first waveguide and a second waveguide. The waveguide coupler also includes a connecting waveguide disposed between the first waveguide and the second waveguide. The connecting waveguide includes a first material having a first index of refraction and a second material having a second index of refraction higher than the first index of refraction.

公开(公告)号：EP2648906A1

公开(公告)日：2013-10-16

申请号：EP11847549.0

申请日：2011-11-22

Applicant: Skorpios Technologies, Inc.

Inventor： DALLESASSE, John ,  KRASULICK, Stephen, B.

IPC: B32B27/00 ,  B32B27/32 ,  H01L21/30

CPC classification number: H01L25/167 ,  H01L21/78 ,  H01L21/822 ,  H01L23/50 ,  H01L24/97 ,  H01L31/1876 ,  H01L33/005 ,  H01L33/48 ,  H01L33/52 ,  H01L2924/1204 ,  H01L2924/12042 ,  H01L2924/14 ,  H01S5/0217 ,  H01S5/026 ,  H01L2924/00

Abstract: A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices and providing a compound semiconductor substrate including a plurality of photonic devices. The method also includes dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method further includes providing an assembly substrate, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, aligning the SOI substrate and the assembly substrate, joining the SOI substrate and the assembly substrate to form a composite substrate structure, and removing at least a portion of the assembly substrate from the composite substrate structure.

公开(公告)号：EP2751603B1

公开(公告)日：2020-02-12

申请号：EP12827040.2

申请日：2012-08-29

Applicant: Skorpios Technologies, Inc.

Inventor： MIZRAHI, Amit ,  CREAZZO, Timothy ,  MARCHENA, Elton ,  VAN ORDEN, Derek ,  KRASULICK, Stephen B.

IPC: G02B6/26 ,  G02B6/42

公开(公告)号：EP2648906B1

公开(公告)日：2018-09-19

申请号：EP11847549.0

申请日：2011-11-22

Applicant: Skorpios Technologies, Inc.

Inventor： DALLESASSE, John ,  KRASULICK, Stephen, B.

IPC: B32B27/00 ,  B32B27/32 ,  H01L21/30 ,  H01L25/16

CPC classification number: H01L25/167 ,  H01L21/78 ,  H01L21/822 ,  H01L23/50 ,  H01L24/97 ,  H01L31/1876 ,  H01L33/005 ,  H01L33/48 ,  H01L33/52 ,  H01L2924/1204 ,  H01L2924/12042 ,  H01L2924/14 ,  H01S5/0217 ,  H01S5/026 ,  H01L2924/00

Abstract: A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices and providing a compound semiconductor substrate including a plurality of photonic devices. The method also includes dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method further includes providing an assembly substrate, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, aligning the SOI substrate and the assembly substrate, joining the SOI substrate and the assembly substrate to form a composite substrate structure, and removing at least a portion of the assembly substrate from the composite substrate structure.

公开(公告)号：EP3149522A1

公开(公告)日：2017-04-05

申请号：EP15800295.6

申请日：2015-05-27

Applicant: Skorpios Technologies, Inc.

Inventor： LAMBERT, Damien ,  KUMAR, Nikhil ,  MARCHENA, Elton ,  LIU, Daming ,  LI, Guoliang ,  ZYSKIND, John

IPC: G02B6/12

CPC classification number: G02B6/14 ,  G02B6/1228 ,  G02B6/132 ,  G02B6/136 ,  G02B6/305 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/12147 ,  G02B2006/12152

Abstract: A waveguide mode expander couples a smaller optical mode in a semiconductor waveguide to a larger optical mode in an optical fiber. The waveguide mode expander comprises a shoulder made of crystalline silicon and a ridge made of non-crystalline silicon (e.g., amorphous silicon). In some embodiments, the ridge of the waveguide mode expander has a plurality of stages, the plurality of stages have different widths and/or thicknesses at a given cross section.

Abstract translation: 波导模式扩展器将半导体波导中较小的光学模式耦合到光纤中较大的光学模式。 波导模式扩展器包括肩部和脊部。 在一些实施例中，波导模式扩展器的脊具有多个级，多个级在给定横截面处具有不同的宽度。