Abstract:
A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure.
Abstract:
A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure.
Abstract:
A method for fabricating a photonic composite device for splitting functionality across materials comprises providing a composite device having a platform and a chip bonded in the platform. The chip is processed comprising patterning, etching, deposition, and/or other processing steps while the chip is bonded to the platform. The chip is used as a gain medium and the platform is at least partially made of silicon.
Abstract in simplified Chinese:v型槽组件用以将透镜状光纤(举例而言,由二氧化硅所制成的光纤)与光子芯片中的波导边缘耦接。v型槽组件是由熔融二氧化硅所制成。使用熔融二氧化硅,使得在将透镜状光纤接合至v型槽组件及/或将v型槽组件接合至光子芯片中所使用的黏合剂(举例而言,环氧树脂)可借由光被固化,至少部分地被固化。
Abstract in simplified Chinese:本案系一可调式激光包含一基材,系包含一硅材料,及耦接至基材的一增益介质。增益介质包含一化合物半导体材料。可调式激光亦包含设于基材内并光学耦接至增益介质的一波导,一第一波长选择组件其特征为一第一反射光谱且设于基材内,以及一第二波长选择组件其特征为一第二反射光谱且设于基材内。可调式激光进一步包含设于基材内且结合第一波长选择组件的一光耦合器、第二波长选择组件、以及波导与一输出反射镜。
Abstract:
A PAM (Pulse Amplitude Modulation) modulator driver is configured to receive a PAM input signal having N input amplitude levels and provide a PAM output signal having N output amplitude levels, where N is an integer. The PAM modulator driver circuit configured to electrically adjust amplitude levels in the PAM output signal.
Abstract:
A high-order-mode (HOM) filter for thick silicon waveguides has a shoulder slab, a waveguide ridge, a first filter ridge, and a second filter ridge. The first filter ridge and the second filter ridge help attenuate higher-order modes from the waveguide ridge while the waveguide ridge guides a fundamental mode.
Abstract:
A reflective structure includes an input/output port and an optical splitter coupled to the input/output port. The optical splitter has a first branch and a second branch. The reflective structure also includes a first resonant cavity optically coupled to the first branch of the optical splitter. The first resonant cavity comprises a first set of reflectors and a first waveguide region disposed between the first set of reflectors. The reflective structures further includes a second resonant cavity optically coupled to the second branch of the optical splitter. The second resonant cavity comprises a second set of reflectors and a second waveguide region disposed between the second set of reflectors.