VERTICAL INTEGRATION OF CMOS ELECTRONICS WITH PHOTONIC DEVICES

    公开(公告)号:SG10201509551PA

    公开(公告)日:2015-12-30

    申请号:SG10201509551P

    申请日:2013-01-18

    Abstract: A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure.

    VERTICAL INTEGRATION OF CMOS ELECTRONICS WITH PHOTONIC DEVICES

    公开(公告)号:SG11201403688RA

    公开(公告)日:2014-10-30

    申请号:SG11201403688R

    申请日:2013-01-18

    Abstract: A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure.

    MULTI-LEVEL OUTPUT DRIVER WITH ADJUSTABLE PRE-DISTORTION CAPABILITY
    8.
    发明申请
    MULTI-LEVEL OUTPUT DRIVER WITH ADJUSTABLE PRE-DISTORTION CAPABILITY 审中-公开
    多级输出驱动器,具有可调节的前置放大器能力

    公开(公告)号:WO2018017943A1

    公开(公告)日:2018-01-25

    申请号:PCT/US2017/043265

    申请日:2017-07-21

    Abstract: A PAM (Pulse Amplitude Modulation) modulator driver is configured to receive a PAM input signal having N input amplitude levels and provide a PAM output signal having N output amplitude levels, where N is an integer. The PAM modulator driver circuit configured to electrically adjust amplitude levels in the PAM output signal.

    Abstract translation: PAM(脉冲幅度调制)调制器驱动器被配置为接收具有N个输入幅度电平的PAM输入信号并提供具有N个输出幅度电平的PAM输出信号,其中N是整数。 PAM调制器驱动器电路被配置为电调节PAM输出信号中的幅度水平。

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