公开(公告)号：SG11201403688RA

公开(公告)日：2014-10-30

申请号：SG11201403688R

申请日：2013-01-18

Applicant: SKORPIOS TECHNOLOGIES INC

Inventor： DALLESASSE JOHN ,  KRASULICK STEPHEN B ,  CREAZZO TIMOTHY ,  MARCHENA ELTON ,  DALLESASSE JOHN ,  KRASULICK STEPHEN B ,  CREAZZO TIMOTHY ,  MARCHENA ELTON

IPC: H01L21/762 ,  H01L27/12 ,  H01L27/146

Abstract: A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure.

公开(公告)号：SG10201509551PA

公开(公告)日：2015-12-30

申请号：SG10201509551P

申请日：2013-01-18

Applicant: SKORPIOS TECHNOLOGIES INC

Inventor： DALLESASSE JOHN ,  KRASULICK STEPHEN B ,  CREAZZO TIMOTHY ,  MARCHENA ELTON

Abstract: A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure.

公开(公告)号：SG11201602314WA

公开(公告)日：2016-04-28

申请号：SG11201602314W

申请日：2014-10-09

Applicant: SKORPIOS TECHNOLOGIES INC

Inventor： KRASULICK STEPHEN B ,  DALLESASSE JOHN ,  MIZRAHI AMIT ,  CREAZZO TIMOTHY ,  MARCHENA ELTON ,  SPANN JOHN Y

IPC: H01L23/13 ,  H01L23/28

Abstract: A method for fabricating a photonic composite device for splitting functionality across materials comprises providing a composite device having a platform and a chip bonded in the platform. The chip is processed comprising patterning, etching, deposition, and/or other processing steps while the chip is bonded to the platform. The chip is used as a gain medium and the platform is at least partially made of silicon.

公开(公告)号：EP2805352A4

公开(公告)日：2015-09-09

申请号：EP13738701

申请日：2013-01-18

Applicant: SKORPIOS TECHNOLOGIES INC

Inventor： DALLESASSE JOHN ,  KRASULICK STEPHEN B ,  CREAZZO TIMOTHY ,  MARCHENA ELTON

IPC: H01L27/12 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/06

CPC classification number: H01L27/14689 ,  H01L21/76254 ,  H01L21/8221 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/12 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/15

Abstract: A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure.

公开(公告)号：EP2648906A4

公开(公告)日：2016-01-20

申请号：EP11847549

申请日：2011-11-22

Applicant: SKORPIOS TECHNOLOGIES INC

Inventor： DALLESASSE JOHN ,  KRASULICK STEPHEN B

IPC: B32B27/00 ,  B32B27/32 ,  H01L21/30 ,  H01L25/16

CPC classification number: H01L25/167 ,  H01L21/78 ,  H01L21/822 ,  H01L23/50 ,  H01L24/97 ,  H01L31/1876 ,  H01L33/005 ,  H01L33/48 ,  H01L33/52 ,  H01L2924/1204 ,  H01L2924/12042 ,  H01L2924/14 ,  H01S5/0217 ,  H01S5/026 ,  H01L2924/00

Abstract: A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices and providing a compound semiconductor substrate including a plurality of photonic devices. The method also includes dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method further includes providing an assembly substrate, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, aligning the SOI substrate and the assembly substrate, joining the SOI substrate and the assembly substrate to form a composite substrate structure, and removing at least a portion of the assembly substrate from the composite substrate structure.