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    Control of stress in metal films by controlling the atmosphere during film deposition
    251.
    发明授权
    Control of stress in metal films by controlling the atmosphere during film deposition 有权
    通过控制膜沉积过程中的气氛来控制金属膜中的应力

    公开(公告)号：US07122872B2

    公开(公告)日：2006-10-17

    申请号：US10441458

    申请日：2003-05-20

    Applicant: James F. Bailey ,  Ho Bun Chan ,  Louis T. Gomez ,  Martin Haueis

    Inventor： James F. Bailey ,  Ho Bun Chan ,  Louis T. Gomez ,  Martin Haueis

    IPC: H01L21/14

    CPC classification number: B81B3/0072 ,  B81C2201/017 ,  H01L21/2855

    Abstract: Materials such as titanium are vapor-deposited in the presence of, e.g., oxygen to form a film on a substrate, such as to provide an adhesion layer between a silicon movable structure in an optical MEMS device and a gold layer serving as a reflecting surface. The resulting film contains titanium and oxygen. Varying the conditions under which the film is deposited varies the intrinsic stress of the film, which varies the change in substrate shape caused by the presence of the film. A film having a desired intrinsic stress may be obtained by control of the oxygen partial pressure when the film is deposited. In one embodiment, the oxygen partial pressure in the atmosphere present during titanium deposition is greater than about 2×10−7 Torr, and preferably between about 1×10−6 Torr and about 2×10−6 Torr.

    Abstract translation: 诸如钛的材料在例如氧的存在下气相沉积以在衬底上形成膜，以便在光学MEMS器件中的硅可移动结构和用作反射表面的金层之间提供粘附层 。 所得膜含有钛和氧。 改变沉积膜的条件改变膜的固有应力，这改变了由于膜的存在引起的衬底形状的变化。 具有期望的固有应力的膜可以通过控制膜沉积时的氧分压来获得。 在一个实施例中，在钛沉积期间存在的气氛中的氧分压大于约2×10 -7乇，优选约1×10 -6乇至约2×10乇， SUP> -6 Torr。

    Control of stress in metal films by controlling the temperature during film deposition
    252.
    发明授权
    Control of stress in metal films by controlling the temperature during film deposition 失效
    通过控制膜沉积过程中的温度来控制金属膜中的应力

    公开(公告)号：US06933004B2

    公开(公告)日：2005-08-23

    申请号：US10441457

    申请日：2003-05-20

    Applicant: Ho Bun Chan ,  Martin Haueis

    Inventor： Ho Bun Chan ,  Martin Haueis

    IPC: B32B15/00 ,  B81B3/00 ,  B81C1/00 ,  C23C14/16 ,  C23C14/54 ,  C23C16/40 ,  C23C16/44 ,  C23C16/46

    CPC classification number: C23C14/541 ,  B81C1/00666 ,  B81C2201/017 ,  C23C14/16 ,  G02B6/3518 ,  Y10T428/12674 ,  Y10T428/12806 ,  Y10T428/24917

    Abstract: Materials such as titanium are vapor-deposited to form a film on a substrate while the substrate is thermally coupled to a temperature-controlling thermal source. Varying the temperature conditions of the substrate when the film is deposited varies the intrinsic stress of the film, which varies the change in substrate shape caused by the presence of the film. A film having a desired intrinsic stress may be obtained by control of the substrate temperature when the film is deposited. A stress-controlled titanium film may be used, for example, as an adhesion layer between a silicon movable structure in an optical MEMS device and a gold layer serving as a reflecting surface.

    Abstract translation: 气相沉积诸如钛的材料以在衬底上热耦合到温度控制热源的同时在衬底上形成膜。 当沉积膜时，改变衬底的温度条件改变了膜的固有应力，这改变了由膜的存在引起的衬底形状的变化。 具有期望的固有应力的膜可以通过在沉积膜时控制衬底温度来获得。 可以使用应力控制的钛膜，例如作为光学MEMS器件中的硅可移动结构和用作反射表面的金层之间的粘合层。

    Control of stress in metal films by controlling the atmosphere during film deposition
    253.
    发明申请
    Control of stress in metal films by controlling the atmosphere during film deposition 有权
    通过控制膜沉积过程中的气氛来控制金属膜中的应力

    公开(公告)号：US20040235296A1

    公开(公告)日：2004-11-25

    申请号：US10441458

    申请日：2003-05-20

    Inventor： James F. Bailey ,  Ho Bun Chan ,  Louis T. Gomez ,  Martin Haueis

    IPC: H01L021/44

    CPC classification number: B81B3/0072 ,  B81C2201/017 ,  H01L21/2855

    Abstract: Materials such as titanium are vapor-deposited in the presence of, e.g., oxygen to form a film on a substrate, such as to provide an adhesion layer between a silicon movable structure in an optical MEMS device and a gold layer serving as a reflecting surface. The resulting film contains titanium and oxygen. Varying the conditions under which the film is deposited varies the intrinsic stress of the film, which varies the change in substrate shape caused by the presence of the film. A film having a desired intrinsic stress may be obtained by control of the oxygen partial pressure when the film is deposited. In one embodiment, the oxygen partial pressure in the atmosphere present during titanium deposition is greater than about 2null10null7 Torr, and preferably between about 1null10null6 Torr and about 2null10null6 Torr.

    Abstract translation: 诸如钛的材料在例如氧的存在下气相沉积以在基底上形成膜，以便在光学MEMS器件中的硅可移动结构和用作反射表面的金层之间提供粘附层 。 所得膜含有钛和氧。 改变沉积膜的条件改变膜的固有应力，这改变了由于膜的存在引起的衬底形状的变化。 具有期望的固有应力的膜可以通过控制膜沉积时的氧分压来获得。 在一个实施方案中，在钛沉积期间存在的气氛中的氧分压大于约2×10 -7乇，优选约1×10 -6乇至约2×10 -6乇。

    Method of fabricating vertical actuation comb drives
    256.
    发明申请
    Method of fabricating vertical actuation comb drives 审中-公开
    制造垂直致动梳状驱动器的方法

    公开(公告)号：US20030082917A1

    公开(公告)日：2003-05-01

    申请号：US10039380

    申请日：2001-10-26

    Inventor： Dean A. Hopkins JR. ,  Martin Lim ,  Minyao Mao

    IPC: H01L021/302 ,  H01L021/461 ,  H01L021/311

    CPC classification number: B81C1/0015 ,  B81B2201/033 ,  B81B2203/0315 ,  B81B2203/051 ,  B81C2201/017 ,  H02N1/008

    Abstract: A method of fabricating a vertical actuation comb drive first etches a cavity in a semiconductive wafer; then the comb structure is etched, and the fixed part of the structure is deformed by an induced strain, by techniques such as boron doping, by adding a metal layer or a fixed oxide, or a mechanical latch or an additional plate electrode. In a manner known in the art, application of a voltage across the fingers of the comb produces a deflection either tilting or a vertical movement in the moveable portion of the comb drive.

    Abstract translation: 制造垂直致动梳状驱动器的方法首先蚀刻半导体晶片中的空腔; 然后对梳状结构进行蚀刻，通过添加金属层或固定氧化物的机械闩锁或附加的板状电极，通过诱导应变，硼掺杂等技术使固定部分发生变形。 以本领域已知的方式，跨梳子的手指施加电压产生在梳子驱动器的可移动部分中的倾斜或垂直移动的偏转。

    Method for manufacturing integrated devices including electromechanical microstructures, without residual stress
    257.
    发明授权
    Method for manufacturing integrated devices including electromechanical microstructures, without residual stress 有权
    包括机电微结构的集成器件的制造方法，没有残余应力

    公开(公告)号：US06331444B1

    公开(公告)日：2001-12-18

    申请号：US09499919

    申请日：2000-02-08

    Applicant: Paolo Ferrari ,  Benedetto Vigna ,  Pietro Montanini ,  Laura Castoldi ,  Marco Ferrera

    Inventor： Paolo Ferrari ,  Benedetto Vigna ,  Pietro Montanini ,  Laura Castoldi ,  Marco Ferrera

    IPC: H01L2100

    CPC classification number: B81B3/0072 ,  B81B2203/033 ,  B81C1/00666 ,  B81C2201/017 ,  G01P15/0802 ,  G01P2015/0828

    Abstract: On a substrate of semiconductor material, a sacrificial region is formed and an epitaxial layer is grown; a stress release trench is formed, surrounding an area of the epitaxial layer, where an integrated electromechanical microstructure is to be formed; the wafer is then heat treated, to release residual stress. Subsequently, the stress release trench is filled with a sealing region of dielectric material, and integrated components are formed. Finally, inside the area surrounded by the sealing region, a microstructure definition trench is formed, and the sacrificial region is removed, thus obtaining an integrated microstructure with zero residual stress.

    Abstract translation: 在半导体材料的衬底上，形成牺牲区，生长外延层; 形成应力释放沟槽，围绕将要形成集成的机电微结构的外延层的区域; 然后对晶片进行热处理，以释放残余应力。 随后，应力释放槽填充有电介质材料的密封区域，形成集成的部件。 最后，在由密封区域包围的区域内，形成微结构定义沟槽，去除牺牲区域，从而获得零残余应力的集成微结构。

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