公开(公告)号：EP2075223B1

公开(公告)日：2014-12-17

申请号：EP08172569.9

申请日：2008-12-22

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： Caplet, Stéphane

IPC: B81C1/00

CPC classification number: B81C1/00944 ,  B81C2201/019

公开(公告)号：EP2315037A4

公开(公告)日：2014-10-29

申请号：EP09808199

申请日：2009-08-10

Applicant: KONICA MINOLTA OPTO INC

Inventor： HIRAYAMA HIROSHI ,  TAKIMURA TOSHINORI

IPC: G01N35/08 ,  B01J19/00 ,  B29C65/02 ,  B81B1/00 ,  B81C3/00 ,  G01N37/00

CPC classification number: B01L3/502707 ,  B01L2300/044 ,  B01L2300/0816 ,  B01L2300/0883 ,  B01L2300/0887 ,  B01L2300/12 ,  B29C65/02 ,  B29C65/06 ,  B29C65/0618 ,  B29C65/08 ,  B29C65/10 ,  B29C65/16 ,  B29C65/18 ,  B29C66/006 ,  B29C66/0344 ,  B29C66/1122 ,  B29C66/53461 ,  B29C66/71 ,  B29C66/73366 ,  B29C66/9141 ,  B29C66/91421 ,  B29C66/91431 ,  B29C66/91645 ,  B29C66/919 ,  B29C66/91941 ,  B29C66/929 ,  B29C66/949 ,  B29C2071/022 ,  B29K2023/06 ,  B29K2023/12 ,  B29K2025/00 ,  B29K2027/06 ,  B29K2027/08 ,  B29K2031/04 ,  B29K2033/12 ,  B29K2033/20 ,  B29K2067/00 ,  B29K2069/00 ,  B29K2077/00 ,  B29K2083/00 ,  B29K2101/12 ,  B29K2995/0018 ,  B29K2995/0035 ,  B29L2031/756 ,  B81B2201/051 ,  B81B2203/0338 ,  B81C1/00071 ,  B81C1/00119 ,  B81C2201/019 ,  B81C2203/032 ,  G01N27/44791 ,  Y10T156/10 ,  B29K2067/003 ,  B29K2025/06 ,  B29K2023/38

Abstract: A microchip (1) in which a resinous film can be inhibited from sagging into a channel. The microchip (1) comprises: a resinous base (2) having a channel groove forme therein; and a resinous film bonded to that side of the base on which the channel groove has been formed. A fine channel (3) including channels (3A) and channels (3B) is formed by the channel groove and the resinous film (10). The total length of the channels (3B), which extend parallel to the X direction for the resinous base (2), is large than the total length of the channels (3A), which extend parallel to the Y direction for the resinous base (2). The resinous base (2) has been bonded to the resinous film so that the sides parallel to the channels (3B) are parallel to the TD for the resinous film and that the sides parallel to the channels (3A) are parallel to the MD for the resinous film.

公开(公告)号：EP2778121A1

公开(公告)日：2014-09-17

申请号：EP14158272.6

申请日：2014-03-07

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： Nicolas, Stéphane

IPC: B81C1/00

CPC classification number: B81C1/00269 ,  B81C1/00285 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/031

Abstract: Procédé d'encapsulation d'au moins un micro-dispositif (100), comportant au moins la mise en oeuvre des étapes de :
- solidarisation d'une face d'un premier substrat (102) comprenant au moins un matériau non perméable vis-à-vis de gaz nobles, contre un deuxième substrat comprenant du verre et d'épaisseur supérieure ou égale à environ 300 µm ;
- gravure d'au moins une cavité (108) à travers le deuxième substrat telle que des parois latérales de la cavité soient formées au moins en partie par des portions restantes (110) du deuxième substrat et qu'une paroi supérieure de la cavité soit formée par une partie (112) de ladite face du premier substrat ;
- scellement anodique des portions restantes du deuxième substrat contre un troisième substrat (114) comprenant le micro-dispositif, tel que le micro-dispositif soit encapsulé dans la cavité.

Abstract translation: 该方法包括将第一衬底（102）的表面粘合在一起，该表面包括与第二玻璃衬底接触的惰性气体不可渗透的材料。 通过第二基板蚀刻空腔（108），使得空腔的侧壁部分地由第二基板的剩余部分（110）形成，并且空腔的上壁由部分（112）形成， 第一衬底。 对其中形成有微器件（100）的第三基板进行剩余部分的阳极接合，使得微器件被封装在空腔中。 惰性气体不可渗透的材料是金属和/或硅。

公开(公告)号：EP2444149A4

公开(公告)日：2014-09-17

申请号：EP10789547

申请日：2010-06-17

Applicant: DEXERIALS CORP

Inventor： KANEKO YUJI ,  ENDO KATSUNOBU ,  SAKAKIBARA SHIGESHI ,  SHINODA KAZUHIRO

IPC: B01J19/00 ,  B81B1/00 ,  B81C3/00 ,  C03C27/06 ,  G01N37/00

CPC classification number: B81C3/001 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00831 ,  B81B2201/051 ,  B81C2201/019 ,  B81C2203/036 ,  C03C19/00 ,  C03C23/0085 ,  C03C27/06 ,  C03C2204/08

公开(公告)号：EP2524390B1

公开(公告)日：2014-08-27

申请号：EP11700636.1

申请日：2011-01-10

Applicant: ELMOS Semiconductor AG

Inventor： DOELLE, Michael

IPC: B81C1/00 ,  B81B3/00 ,  G01L9/00

CPC classification number: B81C1/00158 ,  B81B3/0018 ,  B81B3/0021 ,  B81B3/007 ,  B81B3/0072 ,  B81B3/0081 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00626 ,  B81C99/0035 ,  B81C2201/019 ,  G01L9/0047 ,  H01L29/4916 ,  H01L29/84

公开(公告)号：EP2523896B1

公开(公告)日：2014-06-11

申请号：EP11700163.6

申请日：2011-01-10

Applicant: ELMOS Semiconductor AG

Inventor： SENF, Reinhard

IPC: G01L9/00

CPC classification number: B81C1/00158 ,  B81B3/0018 ,  B81B3/0021 ,  B81B3/007 ,  B81B3/0072 ,  B81B3/0081 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00626 ,  B81C99/0035 ,  B81C2201/019 ,  G01L9/0047 ,  H01L29/4916 ,  H01L29/84

公开(公告)号：EP2457880B1

公开(公告)日：2014-03-05

申请号：EP10306303.8

申请日：2010-11-26

Applicant: Corning Incorporated

Inventor： Groult, Aline Martine Marie ,  Marques, Paulo Gaspar Jorge ,  Sellam, Armand

IPC: C03B23/02 ,  B81C99/00

CPC classification number: C03B23/02 ,  B81B2201/051 ,  B81B2203/0338 ,  B81C99/0085 ,  B81C2201/019 ,  B81C2201/036

公开(公告)号：EP2464448B1

公开(公告)日：2013-10-09

申请号：EP10744519.9

申请日：2010-08-11

Applicant: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

Inventor： PARTSCH, Uwe ,  SCHNEIDER, Mareike ,  MÄNNEL, Dorothea ,  JURK, Robert ,  GOLDBERG, Adrian

IPC: B01F13/00 ,  B01F5/06 ,  B01J19/00 ,  F28D9/00

CPC classification number: B01F13/0059 ,  B01F5/0604 ,  B01F5/0643 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00835 ,  B01J2219/00889 ,  B81B2201/051 ,  B81C1/00119 ,  B81C2201/019 ,  C12M41/18 ,  F28D9/0043 ,  F28F3/086 ,  Y10T137/85938

公开(公告)号：EP2499085B1

公开(公告)日：2013-08-28

申请号：EP10757200.0

申请日：2010-09-23

Applicant: Robert Bosch GmbH

Inventor： TRAUTMANN, Achim ,  REICHENBACH, Ralf

IPC: B81C1/00

CPC classification number: B81C1/00269 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/036 ,  H01L23/10 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/26145 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/29076 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29117 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/30051 ,  H01L2224/30131 ,  H01L2224/30135 ,  H01L2224/30177 ,  H01L2224/30505 ,  H01L2224/30515 ,  H01L2224/32054 ,  H01L2224/32145 ,  H01L2224/32501 ,  H01L2224/83007 ,  H01L2224/83095 ,  H01L2224/83191 ,  H01L2224/83365 ,  H01L2224/83815 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1461 ,  H01L2924/1631 ,  H01L2924/165 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01049 ,  H01L2924/00014

Abstract: A micromechanical assembly for bonding semiconductor substrates includes a semiconductor substrate having a chip pattern having a plurality of semiconductor chips, each having a functional region and an edge region surrounding the functional region. There is a bonding frame made of a bonding alloy made from at least two alloy components in the edge region, spaced apart from the functional region. Within the part of the edge region surrounding the bonding frame between the bonding frame and the functional region, there is at least one stop frame made of at least one of the alloy components, which is configured such that when a melt of the bond alloy contacts the stop frame during bonding, the bonding alloy solidifies.

公开(公告)号：EP2108449A3

公开(公告)日：2013-05-29

申请号：EP09157486.3

申请日：2009-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Park, Jong-myeon ,  Lee, Jeong-gun

IPC: B01L3/00 ,  B29C65/48

CPC classification number: B81C3/001 ,  B01L3/502707 ,  B01L3/502738 ,  B01L2200/0689 ,  B01L2300/0803 ,  B01L2300/0816 ,  B01L2300/0887 ,  B01L2400/0677 ,  B29C65/14 ,  B29C65/1406 ,  B29C65/483 ,  B29C65/4845 ,  B29C65/52 ,  B29C65/526 ,  B29C66/112 ,  B29C66/114 ,  B29C66/1142 ,  B29C66/242 ,  B29C66/244 ,  B29C66/342 ,  B29C66/53461 ,  B29C66/54 ,  B29C66/71 ,  B29C2035/0827 ,  B29L2031/756 ,  B81B2201/051 ,  B81C2201/019 ,  B81C2203/032 ,  Y10T137/206 ,  Y10T137/2164 ,  Y10T137/2169 ,  B29K2033/08 ,  B29K2033/12 ,  B29K2083/00

Abstract: A microfluidic device and a method of fabricating the microfluidic device are provided. The microfluidic device includes: a platform (10) including an upper substrate (14) and a lower substrate (12) that are bonded to face each other; a microfluidic structure (20) obtained by forming grooves in the lower substrate (12); a lower substrate protrusion pattern (30) including an outline protrusion (31) that protrudes from the lower substrate (12) toward the upper substrate (14) along an outline of the microfluidic structure (20); and an adhesive layer (40H) disposed between the lower substrate protrusion pattern (30) and the upper substrate (14) in order to bond the upper substrate (14) and the lower substrate (12) to each other. The lower substrate protrusion pattern (30) only supports the upper substrate (14), and remaining portions of the lower substrate (12) except for the lower substrate protrusion pattern (30) do not have structures for supporting the upper substrate (14).