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    PRECISION POSITION DETERMINING METHOD
    271.
    发明申请
    PRECISION POSITION DETERMINING METHOD 失效
    精确位置确定方法

    公开(公告)号：US20070078623A1

    公开(公告)日：2007-04-05

    申请号：US11240756

    申请日：2005-09-30

    Applicant: Chen-Hsiung Cheng

    Inventor： Chen-Hsiung Cheng

    IPC: G06F15/00

    CPC classification number: B23K26/04 ,  B81C1/00626 ,  B81C2201/0143

    Abstract: A method for generating a surface profile of a microstructure. The profile is processed to determine positions of at least two edges and an approximate center point of the profiled surface. Segments of points on the determined profile are fit to a straight line centered at the approximate center point. A standard deviation of the fitted points is measured. The length and position of the segment are varied until a minimum standard deviation is determined and the process is repeated for segments having different lengths. The point is determined from the longest segment having a standard deviation approximately equal to the minimum standard deviation of all of the segment lengths.

    Abstract translation: 一种用于产生微结构的表面轮廓的方法。 处理轮廓以确定至少两个边缘的位置和成型表面的近似中心点。 所确定的轮廓上的点的分段适合以大致中心点为中心的直线。 测量拟合点的标准偏差。 片段的长度和位置是变化的，直到确定最小标准偏差，并且针对具有不同长度的片段重复该过程。 该点由具有大致等于所有段长度的最小标准偏差的标准偏差的最长段确定。

    Method and apparatus for controlled manufacturing of nanometer-scale apertures
    272.
    发明申请
    Method and apparatus for controlled manufacturing of nanometer-scale apertures 审中-公开
    用于纳米级孔径的控制制造的方法和装置

    公开(公告)号：US20060231774A1

    公开(公告)日：2006-10-19

    申请号：US10547873

    申请日：2004-03-05

    Applicant: Arnoldus Storm ,  Hendrik Zandbergen

    Inventor： Arnoldus Storm ,  Hendrik Zandbergen

    IPC: A61N5/00

    CPC classification number: G01N33/48721 ,  B81B1/004 ,  B81B2203/0127 ,  B81C1/00087 ,  B81C2201/0143 ,  H01J37/31

    Abstract: The invention relates to a method for manufacturing nanometer-scale apertures, wherein, in an object, in a conventional manner, at least one aperture is provided with a nanometer-scale surface area, after which, by means of an electron beam, energy is supplied to at least the edge of said at least one aperture, such that the surface area of the respective aperture is adjusted, wherein the surface area of the aperture is controlled during adjustment and the supply of energy is regulated on the basis of the surface area change.

    Abstract translation: 本发明涉及一种制造纳米尺度孔径的方法，其中在一个目的中，以常规方式，至少一个开口具有纳米级的表面积，之后借助于电子束，能量是 供应到所述至少一个孔的至少边缘，使得调节相应孔的表面积，其中在调节期间控制孔的表面积，并且基于表面积调节能量供应 更改。

    Anisotropic dry etching of cu-containing layers
    273.
    发明申请
    Anisotropic dry etching of cu-containing layers 失效
    含Cu层的各向异性干蚀刻

    公开(公告)号：US20050224456A1

    公开(公告)日：2005-10-13

    申请号：US10517764

    申请日：2003-06-27

    Applicant: Lee Chen ,  Audunn Ludviksson

    Inventor： Lee Chen ,  Audunn Ludviksson

    IPC: B44C1/22 ,  B81C1/00 ,  C23F1/00 ,  C23F1/12 ,  C23F4/00 ,  H01L21/3213 ,  H01L21/768

    CPC classification number: C23F1/12 ,  B81C1/00492 ,  B81C2201/0143 ,  C23F4/00 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76838

    Abstract: A method and apparatus for dry etching pure Cu and Cu-containing layers (220, 310) for manufacturing integrated circuits. The invention uses a directional beam of O-atoms with high kinetic energy (340) to oxidize the Cu and Cu-containing layers, and etching reagents (370) that react with the oxidized Cu (360) to form volatile Cu-containing etch products (390). The invention allows for low-temperature, anisotropic etching of pure Cu and Cu-containing layers in accordance with a patterned hard mask or photoresist (230, 330).

    Abstract translation: 用于干蚀刻用于制造集成电路的纯Cu和Cu层（220,310）的方法和装置。 本发明使用具有高动能（340）的O原子的定向光束氧化含Cu和Cu的层，以及与氧化的Cu（360）反应形成挥发性含Cu蚀刻产物的蚀刻试剂（370） （390）。 本发明允许根据图案化的硬掩模或光致抗蚀剂（230,330）对纯Cu和Cu层进行低温，各向异性蚀刻。

    Method for nanomachining high aspect ratio structures
    274.
    发明申请
    Method for nanomachining high aspect ratio structures 审中-公开
    纳米加工高纵横比结构的方法

    公开(公告)号：US20050032378A1

    公开(公告)日：2005-02-10

    申请号：US10941254

    申请日：2004-09-14

    Applicant: Wenbing Yu ,  John Spence ,  Howard Padmore ,  Alastair MacDowell ,  Malcolm Howells

    Inventor： Wenbing Yu ,  John Spence ,  Howard Padmore ,  Alastair MacDowell ,  Malcolm Howells

    IPC: B81C1/00 ,  H01L21/8242 ,  H01L21/302 ,  H01L21/461

    CPC classification number: B81C1/00619 ,  B81C1/00595 ,  B81C2201/0143

    Abstract: A nanomachining method for producing high-aspect ratio precise nanostructures. The method begins by irradiating a wafer with an energetic charged-particle beam. Next, a layer of patterning material is deposited on one side of the wafer and a layer of etch stop or metal plating base is coated on the other side of the wafer. A desired pattern is generated in the patterning material on the top surface of the irradiated wafer using conventional electron-beam lithography techniques. Lastly, the wafer is placed in an appropriate chemical solution that produces a directional etch of the wafer only in the area from which the resist has been removed by the patterning process. The high mechanical strength of the wafer materials compared to the organic resists used in conventional lithography techniques with allows the transfer of the precise patterns into structures with aspect ratios much larger than those previously achievable.

    Abstract translation: 用于生产高纵横比精确纳米结构的纳米加工方法。 该方法通过用能量带电粒子束照射晶片开始。 接下来，在晶片的一侧上沉积图案材料层，并且在晶片的另一侧上涂覆有一层蚀刻停止层或金属电镀底座。 使用常规电子束光刻技术在照射晶片的顶表面上的图形材料中产生期望的图案。 最后，将晶片放置在合适的化学溶液中，仅在通过图案化工艺除去抗蚀剂的区域中产生晶片的定向蚀刻。 与常规光刻技术中使用的有机抗蚀剂相比，晶片材料的高机械强度允许将精确图案转移到具有比先前可实现的更高的纵横比的结构。

    Control of solid state dimensional features
    278.
    发明申请
    Control of solid state dimensional features 有权

    公开(公告)号：US20030066749A1

    公开(公告)日：2003-04-10

    申请号：US10186105

    申请日：2002-06-27

    Applicant: President and Fellows of Harvard College

    Inventor： Jene A. Golovchenko ,  Daniel Branton ,  Michael J. Aziz ,  Jiali Li ,  Derek M. Stein ,  Ciaran J. McMullan

    IPC: C23C014/32

    CPC classification number: B81C1/00626 ,  B81C2201/0143 ,  G01N33/48721 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A solid state structure having a surface is provided and is exposed to a flux, F, of incident ions. The conditions of this incident ion exposure are selected based on: 1 null null t null C null ( r , t ) = F null null null Y 1 + D null null 2 null C - C null trap - F null null null C null null null null C , where C is concentration of mobile adatoms at structure surface, r is vector surface position, t is time, Y1 is number of adatoms created per incident ion, D is adatom diffusivity, nulltrap is average lifetime of an adatom before adatom annihilation occurs at a structure surface defect characteristic of solid state structure material, and nullCis cross-section for adatom annihilation by incident ions characteristic of selected ion exposure conditions. Ion exposure condition selection controls sputtering of the structure surface by incident ions to transport, within the structure including the structure surface, material of the structure to a feature location, in response to the ion flux exposure, to produce a feature substantially by locally adding material of the structure to the feature location.

    Laser release process for micromechanical devices
    279.
    发明授权
    Laser release process for micromechanical devices 有权
    微机械装置的激光释放过程

    公开(公告)号：US06538233B1

    公开(公告)日：2003-03-25

    申请号：US09992946

    申请日：2001-11-06

    Applicant: W. David Lee ,  Paul A. Ruggerio

    Inventor： W. David Lee ,  Paul A. Ruggerio

    IPC: B23K2600

    CPC classification number: B81C1/00484 ,  B23K26/40 ,  B23K2103/50 ,  B81C1/00968 ,  B81C2201/0143 ,  G01P15/0802 ,  G01P2015/0814

    Abstract: A method for releasing a structure from contact with a substrate in a micromechanical device includes the step of irradiating the structure with energy having parameters selected to produce a thermal gradient normal to the surface of the structure which causes upward bowing and release of the structure from the substrate. Preferably, the structure is irradiated with laser energy and, more preferably, the structure is irradiated with pulsed laser energy. The temperature gradient creates a strain gradient, due to thermal expansion, which causes the structure to bow upwardly. Support elements react and hold the structure up after the thermal gradient has disappeared.

    Abstract translation: 用于在微机械装置中释放结构与基底接触的方法包括以下步骤：用能量进行照射，所述能量具有选择的参数，以产生与结构表面垂直的热梯度，这导致结构的向上弯曲和释放 基质。 优选地，用激光能量照射该结构，更优选地，用脉冲激光能量照射该结构。 温度梯度由于热膨胀而产生应变梯度，这导致结构向上弯曲。 支撑元件在热梯度消失后反应并保持结构。

    Microelectromechanical device having a stiffened support beam, and methods of forming stiffened support beams in MEMS
    280.
    发明申请
    Microelectromechanical device having a stiffened support beam, and methods of forming stiffened support beams in MEMS 失效
    具有加强的支撑梁的微机电装置以及在MEMS中形成加强的支撑梁的方法

    公开(公告)号：US20030032215A1

    公开(公告)日：2003-02-13

    申请号：US09924370

    申请日：2001-08-07

    Inventor： Thomas W. Ives

    IPC: H01L021/00 ,  H01L021/44 ,  H01L021/48 ,  H01L021/50 ,  H01L029/82

    CPC classification number: G01P15/08 ,  B81B3/007 ,  B81B2201/0235 ,  B81C2201/0143 ,  G01P2015/0817

    Abstract: A microelectromechanical device (MEMD) defined within a substrate of a MEMS includes a mass element defining an area of interest. The device also includes a support beam supporting the mass element in spaced-apart relationship from the substrate. The support beam includes a first beam member defined by a first fixed end connected to the substrate, and a first free end connected to the mass element. The support beam further includes a second beam member defined by a second fixed end connected to the substrate, and a second free end connected to the mass element. The beam members are in spaced-apart relationship from one another. A first cross member connects the first beam member and the second beam member. Preferably, the support beam includes a plurality of cross members. Two such support beams can be used to support a mass element in a MEMD in a bridge configuration.

    Abstract translation: 限定在MEMS的衬底内的微机电装置（MEMD）包括限定感兴趣区域的质量元件。 该装置还包括支撑梁，该支撑梁以与衬底隔开的关系支撑质量元件。 支撑梁包括由连接到基板的第一固定端和连接到质量元件的第一自由端限定的第一梁构件。 支撑梁还包括由连接到基板的第二固定端限定的第二梁构件和连接到质量元件的第二自由端。 梁构件彼此间隔开。 第一横向构件连接第一梁构件和第二梁构件。 优选地，支撑梁包括多个横向构件。 可以使用两个这样的支撑梁来支撑桥梁构造中的MEMD中的质量元件。

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