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    Active-Matrix Field Emission Pixel and Active-Matrix Field Emission Display
    271.
    发明申请
    Active-Matrix Field Emission Pixel and Active-Matrix Field Emission Display 有权
    有源矩阵场发射像素和有源矩阵场发射显示

    公开(公告)号：US20080284314A1

    公开(公告)日：2008-11-20

    申请号：US12096595

    申请日：2006-11-27

    Applicant: Yoon Ho Song ,  Dae Jun Kim ,  Jin Woo Jeong ,  Jin Ho Lee ,  Kwang Yong Kang

    Inventor： Yoon Ho Song ,  Dae Jun Kim ,  Jin Woo Jeong ,  Jin Ho Lee ,  Kwang Yong Kang

    IPC: H01J1/62 ,  G09G3/12 ,  G09G3/20

    CPC classification number: H01J1/304 ,  G09G3/22 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/319

    Abstract: Provided is a field emission display (FED) capable of driving on the basis of current and preventing leakage current caused by thin film transistors (TFTs). The FED includes: a plurality of unit pixels including an emission element in which cathode luminescence of a phosphor occurs and a TFT for driving the emission element; a current source for applying a scan signal to each unit pixel; and a voltage source for applying a data signal to each unit pixel. Here, the on-current of the current source is high enough to take care of the load resistance and capacitance of a scan row within a given writing time, and the off-current of the current source is so low that the electron emission of each pixel can be ignored. In addition, the pulse amplitude or pulse width of the data signal applied from the voltage source is changed, and thereby the gray scale of the display is represented.

    Abstract translation: 提供了能够基于电流驱动并防止由薄膜晶体管（TFT）引起的漏电流的场致发射显示器（FED）。 FED包括：多个单位像素，包括其中发生荧光体的阴极发光的发射元件和用于驱动发光元件的TFT; 用于向每个单位像素施加扫描信号的电流源; 以及用于将数据信号施加到每个单位像素的电压源。 这里，电流源的导通电流足够高，以便在给定的写入时间内照顾扫描行的负载电阻和电容，并且电流源的截止电流非常低以致每个电流源的电子发射 像素可以忽略。 此外，改变从电压源施加的数据信号的脉冲幅度或脉冲宽度，从而表示显示器的灰度级。

    ELECTRON EMISSION DEVICE, ELECTRON EMISSION TYPE BACKLIGHT UNIT INCLUDING ELECTRON EMISSION DEVICE, AND METHOD OF FABRICATING ELECTRON EMISSION DEVICE
    272.
    发明申请
    ELECTRON EMISSION DEVICE, ELECTRON EMISSION TYPE BACKLIGHT UNIT INCLUDING ELECTRON EMISSION DEVICE, AND METHOD OF FABRICATING ELECTRON EMISSION DEVICE 审中-公开
    电子发射装置，包括电子发射装置的电子发射型背光单元，以及制造电子发射装置的方法

    公开(公告)号：US20080061677A1

    公开(公告)日：2008-03-13

    申请号：US11756169

    申请日：2007-05-31

    Applicant: Yoon-Jin KIM ,  Jae-Myung Kim ,  Hee-Sung Moon

    Inventor： Yoon-Jin KIM ,  Jae-Myung Kim ,  Hee-Sung Moon

    IPC: H01J1/62 ,  H01J1/14 ,  H01J9/00

    CPC classification number: H01J1/30 ,  H01J9/022 ,  H01J63/02 ,  H01J2201/319

    Abstract: An electron emission device to regularly emit electrons and a method of manufacturing the same. Also, an electron emission type backlight unit including the electron emission device in which a high voltage can be applied to an anode and required brightness can be obtained. In addition, the electron emission device can be manufactured using a simplified manufacturing process. The electron emission device includes a first electrode, a second electrode formed opposite the first electrode, and an electron emission layer which is electrically connected to one or each of the first and second electrodes and comprising carbide-derived carbon. The electron emission device may be a display device to form static or dynamic images.

    Abstract translation: 规则地发射电子的电子发射装置及其制造方法。 此外，可以获得包括其中可以向阳极施加高电压并且需要亮度的电子发射器件的电子发射型背光单元。 此外，可以使用简化的制造工艺来制造电子发射器件。 电子发射装置包括第一电极，与第一电极相对形成的第二电极和电连接到第一和第二电极中的一个或每个并且包含碳化物衍生的碳的电子发射层。 电子发射装置可以是用于形成静态或动态图像的显示装置。

    Field effect transistor fabrication methods, field emission device fabrication methods, and field emission device operational methods
    273.
    发明授权
    Field effect transistor fabrication methods, field emission device fabrication methods, and field emission device operational methods 有权
    场效应晶体管制造方法，场发射器件制造方法和场致发射器件的操作方法

    公开(公告)号：US07329552B2

    公开(公告)日：2008-02-12

    申请号：US10072415

    申请日：2002-02-05

    Applicant: Ji Ung Lee ,  John Lee ,  Benham Moradi

    Inventor： Ji Ung Lee ,  John Lee ,  Benham Moradi

    IPC: H01L21/00

    CPC classification number: H01L29/78618 ,  H01J9/025 ,  H01J2201/319

    Abstract: The present invention includes field effect transistors, field emission apparatuses, thin film transistors, and methods of forming field effect transistors. According to one embodiment, a field effect transistor includes a semiconductive layer configured to form a channel region; a pair of spaced conductively doped semiconductive regions in electrical connection with the channel region of the semiconductive layer; a gate intermediate the semiconductive regions; and a gate dielectric layer intermediate the semiconductive layer and the gate, the gate dielectric layer being configured to align the gate with the channel region of the semiconductive layer. In one aspect, chemical-mechanical polishing self-aligns the gate with the channel region. According to another aspect, a field emission device includes a transistor configured to control the emission of electrons from an emitter.

    Abstract translation: 本发明包括场效应晶体管，场发射装置，薄膜​​晶体管和形成场效应晶体管的方法。 根据一个实施例，场效应晶体管包括被配置为形成沟道区的半导体层; 一对间隔导电掺杂的半导体区域，与半导体层的沟道区域电连接; 半导体区域中间的栅极; 以及在所述半导体层和所述栅极之间的栅极电介质层，所述栅极电介质层被配置为使所述栅极与所述半导体层的沟道区域对准。 在一个方面，化学机械抛光使栅极与沟道区域自对准。 根据另一方面，场发射器件包括被配置为控制来自发射极的电子的发射的晶体管。

    Electron emission device
    274.
    发明授权
    Electron emission device 有权
    电子发射装置

    公开(公告)号：US07268361B2

    公开(公告)日：2007-09-11

    申请号：US10483114

    申请日：2002-07-01

    Applicant: Pavel Adamec ,  Dieter Winkler

    Inventor： Pavel Adamec ,  Dieter Winkler

    IPC: H01L29/06 ,  H01L21/00

    CPC classification number: H01J1/3044 ,  H01J2201/319

    Abstract: The invention provides an electron beam device 1 comprising at least one field emission cathode 3 and at least one extracting electrode 5, whereby the field emission cathode 5 comprises a p-type semiconductor region 7 connected to an emitter tip 9 made of a semiconductor material, an n-type semiconductor region 11 forming a pn-diode junction 13 with the p-type semiconductor region 7 a first electric contact 15 on the p-type semiconductor region 7 and a second electric contact 17 on the n-type semiconductor region 11. The p-type semiconductor region 7 prevents the flux of free electrons to the emitter unless electrons are injected into the p-type semiconductor region 7 by the pn-diode junction 13. This way, the field emission cathode 3 can generate an electron beam where the electron beam current is controlled by the forward biasing second voltage V2 across the pn-diode junction. Such electron beam current has an improved current value stability. In addition the electron beam current does not have to be stabilized anymore by adjusting, the voltage between emitter tip 9 and extracting electrode 5 which would interfere with the electric field of electron beam optics. The present invention further provides the field emission cathode as described above and an array of field emission cathodes. The invention further provides a method to generate at least one electron beam.

    Abstract translation: 本发明提供一种包括至少一个场发射阴极3和至少一个提取电极5的电子束装置1，由此场发射阴极5包括连接到由半导体材料制成的发射极尖端9的p型半导体区域7， 在p型半导体区域7上形成p型二极管结13的n型半导体区域11，p型半导体区域7上的第一电接触15和n型半导体区域11上的第二电接触17。 p型半导体区域7防止自由电子束流到发射极，除非电子被pn二极管结13注入到p型半导体区域7中。这样，场发射阴极3可以产生电子束，其中 电子束电流由跨越pn二极管结的正向偏置第二电压V 2控制。 这种电子束电流具有改善的电流值稳定性。 此外，电子束电流不必通过调节发射极尖端9和提取电极5之间的电压，这将干扰电子束光学器件的电场。 本发明还提供如上所述的场致发射阴极和场发射阴极阵列。 本发明还提供了一种产生至少一个电子束的方法。

    Tip structures, devices on their basis, and methods for their preparation
    276.
    发明授权
    Tip structures, devices on their basis, and methods for their preparation 失效
    提示结构，设备基础及其准备方法

    公开(公告)号：US07161148B1

    公开(公告)日：2007-01-09

    申请号：US09980432

    申请日：2000-05-31

    Applicant: Evgeny Invievich Givargizov ,  Michail Evgenievich Givargizov

    Inventor： Evgeny Invievich Givargizov ,  Michail Evgenievich Givargizov

    IPC: C30B25/18

    CPC classification number: G01Q70/16 ,  G01Q70/12 ,  H01J1/3042 ,  H01J2201/319

    Abstract: New designs of electron devices such as scanning probes and field emitters based on tip structures are proposed. The tips are prepared from whiskers that are grown from the vapor phase by the vapor-liquid-solid technology. Some new designs for preparation of field-emitters and of probes for magnetic, electrostatic, morphological, etc, investigations based on the specific technology are proposed. New designs for preparation of multilever probes are proposed, too.

    Abstract translation: 提出了基于尖端结构的电子器件如扫描探针和场发射器的新设计。 尖端由通过气液固化技术从气相生长的晶须制备。 提出了一些基于具体技术的新型设计，用于制备磁场，静电，形态等场地发射器和探针。 还提出了用于制备多列探针的新设计。

    Method of forming nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate
    278.
    发明授权
    Method of forming nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate 有权
    形成氮磷掺杂非晶硅作为场致发射显示器件基板电阻的方法

    公开(公告)号：US07097526B2

    公开(公告)日：2006-08-29

    申请号：US11167695

    申请日：2005-06-27

    Applicant: Kanwal K. Raina ,  Benham Moradi

    Inventor： Kanwal K. Raina ,  Benham Moradi

    IPC: H01J9/24

    CPC classification number: H01J1/30 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/00

    Abstract: Described herein is a resistor layer for use in field emission display devices and the like, and its method of manufacture. The resistor layer is an amorphous silicon layer doped with nitrogen and phosphorus. Nitrogen concentration in the resistor layer is preferably between about 5 and 15 atomic percent. The presence of nitrogen and phosphorus in the silicon prevents diffusion of Si atoms into metal conductive layers such as aluminum, even up to diffusion and packaging temperatures. The nitrogen and phosphorus also prevent defects from forming at the boundary between the resistor layer and metal conductor. This leads to better control over shorting and improved resistivity in the resistor.

    Abstract translation: 这里描述的是用于场发射显示装置等的电阻层及其制造方法。 电阻层是掺杂有氮和磷的非晶硅层。 电阻层中的氮浓度优选为约5至15原子％。 硅中的氮和磷的存在防止Si原子扩散到金属导电层如铝中，甚至达到扩散和封装温度。 氮和磷还可以防止在电阻层和金属导体之间的边界处形成缺陷。 这导致更好地控制电阻器的短路和改善电阻率。

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