公开(公告)号：US20050266765A1

公开(公告)日：2005-12-01

申请号：US11167695

申请日：2005-06-27

Applicant: Kanwal Raina ,  Benham Moradi

Inventor： Kanwal Raina ,  Benham Moradi

IPC: H01J1/02 ,  H01J1/304 ,  H01J1/62 ,  H01J9/02 ,  H01J19/02 ,  H01J63/04

CPC classification number: H01J1/30 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/00

Abstract: Described herein is a resistor layer for use in field emission display devices and the like, and its method of manufacture. The resistor layer is an amorphous silicon layer doped with nitrogen and phosphorus. Nitrogen concentration in the resistor layer is preferably between about 5 and 15 atomic percent. The presence of nitrogen and phosphorus in the silicon prevents diffusion of Si atoms into metal conductive layers such as aluminum, even up to diffusion and packaging temperatures. The nitrogen and phosphorus also prevent defects from forming at the boundary between the resistor layer and metal conductor. This leads to better control over shorting and improved resistivity in the resistor.

Abstract translation: 这里描述的是用于场发射显示装置等的电阻层及其制造方法。 电阻层是掺杂有氮和磷的非晶硅层。 电阻层中的氮浓度优选为约5至15原子％。 硅中的氮和磷的存在防止Si原子扩散到金属导电层如铝中，甚至达到扩散和封装温度。 氮和磷还可以防止在电阻层和金属导体之间的边界处形成缺陷。 这导致更好地控制电阻器的短路和改善电阻率。

公开(公告)号：US06879096B1

公开(公告)日：2005-04-12

申请号：US09705957

申请日：2000-11-06

Applicant: Toshihiko Miyazaki ,  Takeo Ono ,  Hideaki Mitsutake ,  Mitsutoshi Hasegawa ,  Eiji Yamaguchi ,  Shuji Yamada ,  Yasuyuki Todokoro

Inventor： Toshihiko Miyazaki ,  Takeo Ono ,  Hideaki Mitsutake ,  Mitsutoshi Hasegawa ,  Eiji Yamaguchi ,  Shuji Yamada ,  Yasuyuki Todokoro

IPC: G09G3/20 ,  G09G3/22 ,  G09G5/02 ,  H01J29/02 ,  H01J29/86 ,  H01J29/92 ,  H01J31/12 ,  H04N5/44 ,  H04N5/70 ,  H04N9/12 ,  H04N9/30 ,  H01J1/62

CPC classification number: G09G3/2011 ,  G09G3/2014 ,  G09G3/22 ,  G09G5/02 ,  G09G2310/0229 ,  G09G2310/0267 ,  G09G2310/027 ,  G09G2320/0276 ,  G09G2320/0626 ,  G09G2330/02 ,  G09G2330/027 ,  G09G2330/04 ,  G09G2340/125 ,  H01J1/316 ,  H01J29/02 ,  H01J29/028 ,  H01J29/04 ,  H01J29/085 ,  H01J29/86 ,  H01J29/864 ,  H01J29/90 ,  H01J29/92 ,  H01J29/94 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2201/319 ,  H01J2329/02 ,  H01J2329/0489 ,  H01J2329/323 ,  H01J2329/8625 ,  H01J2329/863 ,  H01J2329/864 ,  H01J2329/8645 ,  H01J2329/8655 ,  H01J2329/866 ,  H01J2329/90 ,  H01J2329/92 ,  H04N5/70 ,  H04N7/012 ,  H04N9/12 ,  H04N9/30

Abstract: An image formation apparatus is disclosed which includes, within an enclosure configured by a pair of substrates placed face to face and an external frame placed between the substrates, an electron source placed on one of the pair of substrates, an image formation material placed on the other substrate, and spacers placed between the substrates, characterized in that the spacers and the external frame is conductive and device is provided for electrically connecting the spacers and the external frame so that the equipotential surfaces between the spacers and the external frame are quasi-parallel when driven.

Abstract translation: 公开了一种图像形成装置，其包括在由面对面放置的一对基板和设置在基板之间的外部框架构成的外壳内，放置在一对基板之一上的电子源，放置在该基板上的图像形成材料 其它基板和位于基板之间的间隔物，其特征在于，间隔件和外框架是导电的，并且提供了用于电连接间隔件和外框架的装置，使得间隔件和外框之间的等电位面准准平行 驱动时。

公开(公告)号：US20050056846A1

公开(公告)日：2005-03-17

申请号：US10734288

申请日：2003-12-15

Applicant: Chun-Yao Huang ,  Cheng-Chung Chen ,  Yu-Wu Wang ,  Chen-Ming Chen ,  Huai-Yuan Tseng

Inventor： Chun-Yao Huang ,  Cheng-Chung Chen ,  Yu-Wu Wang ,  Chen-Ming Chen ,  Huai-Yuan Tseng

IPC: G09G3/22 ,  H01J31/12 ,  H01L21/336 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L29/04

CPC classification number: H01L29/42384 ,  G09G3/22 ,  G09G2300/0809 ,  H01J31/127 ,  H01J2201/319 ,  H01L27/12 ,  H01L29/78645

Abstract: A thin film transistor structure for a field emission display is disclosed, which has a substrate; a patterned poly-silicon layer having a source area, a drain area, and a channel on the substrate; a patterned first gate metal layer; a first gate-insulating layer sandwiched in between the poly-silicon layer and the first gate metal layer; a patterned second gate metal layer; and a second gate-insulating layer sandwiched in between the poly-silicon layer and the second gate metal layer; wherein the thickness of the second insulating layer is greater than that of the first gate-insulating layer, and the absolute voltage in the channel under the first gate metal layer is less than that under the second gate metal layer when a voltage higher than the threshold voltage thereof is applied to both of the first gate metal layer and the second gate metal layer.

Abstract translation: 公开了一种用于场发射显示器的薄膜晶体管结构，其具有基板; 具有源极区域，漏极区域和沟道的图案化多晶硅层; 图案化的第一栅极金属层; 夹在所述多晶硅层和所述第一栅极金属层之间的第一栅极绝缘层; 图案化的第二栅极金属层; 以及夹在所述多晶硅层和所述第二栅极金属层之间的第二栅极绝缘层; 其中所述第二绝缘层的厚度大于所述第一栅极绝缘层的厚度，并且当所述第一栅极金属层下方的电压高于所述阈值时，所述第二栅极金属层下面的沟道中的绝对电压小于所述第二栅极金属层下方的绝缘电压 电压施加到第一栅极金属层和第二栅极金属层两者。

公开(公告)号：US06817916B2

公开(公告)日：2004-11-16

申请号：US10622909

申请日：2003-07-21

Applicant: Arthur Piehl

Inventor： Arthur Piehl

IPC: H01J900

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/319

Abstract: An enhanced Spindt-tip field emitter tip and a method for producing the enhanced Spindt-tip field emitter. A thin-film resistive heating element is positioned below the field emitter tip to allow for resistive heating of the tip in order to sharpen the tip and to remove adsorbed contaminants from the surface of the tip. Metal layers of the enhanced field emission device are separated by relatively thick dielectric bilayers, with the metal layers having increased thickness in the proximity of a cylindrical well in which the field emitter tip is deposited. Dielectric material is pulled back from the cylindrical aperture into which the field emitter tip is deposited in order to decrease buildup of conductive contaminants and the possibility of short circuits between metallic layers.

Abstract translation: 增强的Spindt-tip场发射器尖端和用于产生增强的Spindt-tip场发射器的方法。 薄膜电阻加热元件位于场发射器尖端下方，以允许尖端的电阻加热，以便锐化尖端并从尖端的表面去除吸附的污染物。 增强型场致发射器件的金属层由相对厚的电介质双层隔开，金属层在其中沉积场致发射极尖端的圆柱形阱附近具有增加的厚度。 电介质材料从圆柱形孔中被拉回，放射场尖端被沉积到其中，以减少导电污染物的积聚和金属层之间短路的可能性。

公开(公告)号：US20040212315A1

公开(公告)日：2004-10-28

申请号：US10852319

申请日：2004-05-24

Inventor： Robert T. Rasmussen

IPC: G09G003/10

CPC classification number: G09G3/22 ,  G09G2320/0233 ,  H01J29/467 ,  H01J29/481 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/4695

Abstract: The invention includes field emitters, field emission displays (FEDs), monitors, computer systems and methods employing the same for providing uniform electron beams from cathodes of FED devices. The apparatuses each include electron beam uniformity circuitry. The electron beam uniformity circuit provides a grid voltage, VGrid, with a DC offset voltage sufficient to induce field emission from a cathode and a periodic signal superimposed on the DC offset voltage for varying the grid voltage at a frequency fast enough to be undetectable by the human eye. The cathodes may be of the micro-tipped or flat variety. The periodic signal may be sinusoidal with peak-to-peak voltage of between about 5 volts and about 50 volts.

Abstract translation: 本发明包括场发射器，场致发射显示器（FED），监视器，计算机系统以及采用该系统的方法来从FED装置的阴极提供均匀的电子束。 这些装置各自包括电子束均匀性电路。 电子束均匀性电路提供具有足以引起来自阴极的场发射的DC偏移电压和叠加在DC偏移电压上的周期信号的电网电压VGrid，以便以足够快的频率来改变电网电压，以便不能被 人类的眼睛。 阴极可以是微尖或扁平的品种。 周期信号可以是正弦曲线，其中峰 - 峰电压介于约5伏至约50伏之间。

公开(公告)号：US06727642B1

公开(公告)日：2004-04-27

申请号：US09646730

申请日：2000-09-20

Applicant: Gyu Hyeong Cho ,  Nam Sung Jung ,  Gyun Chae ,  Tae Ha Ryoo ,  Jon Woon Hong ,  Seung Tak Ryu ,  Young Ki Kim

Inventor： Gyu Hyeong Cho ,  Nam Sung Jung ,  Gyun Chae ,  Tae Ha Ryoo ,  Jon Woon Hong ,  Seung Tak Ryu ,  Young Ki Kim

IPC: H01J162

CPC classification number: H01J1/304 ,  H01J2201/319 ,  H01J2329/00

Abstract: Disclosed are flat panel field emitter displays whose unit cell structure adopt a planar cathode structure in stead of a conventional microtip structure, so as to increase the degree of integration and can be operated at low operation voltages at high speeds. In the structure, a channel insulator is formed below the cathode and underlaid by a gate. By means of the gate voltage, the electron emission from the cathode can be controlled. The electrodes in the structure are arranged in the order of anode, cathode and gate, allowing the simplification of processes. With the ease of controlling the distance between electrodes, the displays can be applied for almost all video systems from small sizes to large screen area displays, in place of conventional displays. The displays allows conventional semiconductor processes and facilities to be utilized as they are.

Abstract translation: 公开了平板型场发射体显示器，其单体电池结构采用平面阴极结构代替常规微尖端结构，从而提高集成度，并可在高速下在低工作电压下工作。 在该结构中，沟槽绝缘体形成在阴极下方并由栅极覆盖。 通过栅极电压，可以控制来自阴极的电子发射。 结构中的电极按阳极，阴极和栅极的顺序排列，允许简化工艺。 通过容易地控制电极之间的距离，显示器可以应用于从小尺寸到大屏幕区域显示器的几乎所有的视频系统，代替传统的显示器。 这些显示器允许常规的半导体工艺和设备被使用。

公开(公告)号：US06568979B2

公开(公告)日：2003-05-27

申请号：US10012612

申请日：2001-12-12

Applicant: David S. Y. Hsu

Inventor： David S. Y. Hsu

IPC: H01J900

CPC classification number: B82Y10/00 ,  B82Y30/00 ,  H01J1/3046 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2201/319

Abstract: A field emitter cell includes a thin-film-edge emitter normal to the gate layer. The field emitter cell may include a conductive substrate layer, an insulator layer having a perforation, a gate layer having a perforation, an emitter layer, and other optional layers. The perforation in the gate layer is larger and concentrically offset with respect to the perforation in the insulating layer and may be of a tapered construction. Alternatively, the perforation in the gate layer may be coincident with, or larger or smaller than, the perforation in the insulating layer, provided that the gate layer is shielded from the emitter from a direct line-of-sight by a nonconducting standoff layer. Optionally, the thin-film-edge emitter may include incorporated nanofilaments. The field emitter cell has low gate current, making it useful for various applications such as field emitter displays, high voltage power switching, microwave, RF amplification and other applications that require high emission currents.

Abstract translation: 场发射极单元包括垂直于栅极层的薄膜边缘发射极。 场致发射单元可以包括导电基底层，具有穿孔的绝缘体层，具有穿孔的栅极层，发射极层和其它可选层。 栅极层中的穿孔相对于绝缘层中的穿孔更大并且同心地偏移，并且可以是锥形结构。 或者，栅极层中的穿孔可以与绝缘层中的穿孔重合或更大或更小，只要栅极层通过非导电间隔层从发射器与直接视线屏蔽。 任选地，薄膜边缘发射器可以包括并入的纳米丝。 场致发射单元具有低栅极电流，使其适用于需要高发射电流的场发射显示器，高压功率开关，微波，RF放大等应用。

公开(公告)号：US06525453B2

公开(公告)日：2003-02-25

申请号：US09846209

申请日：2001-05-02

Applicant: Huang Chung Cheng ,  Fu-Guo Tarntair

Inventor： Huang Chung Cheng ,  Fu-Guo Tarntair

IPC: H01J102

CPC classification number: H01L27/124 ,  B82Y10/00 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2201/319 ,  H01L27/1214 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/952

Abstract: The present invention proposes a field emitting display, wherein a field emitting array is formed on a glass substrate. The field emitting array comprises a plurality of arrays of thin film transistors and a plurality of carbon nanotubes used as field emitting cathodes. The magnitude and stability of the field-emitted current of the carbon nanotubes are controlled by using the thin film transistors. The present invention has the characteristics of high quality, large area, and low cost.

公开(公告)号：US20030001489A1

公开(公告)日：2003-01-02

申请号：US09260987

申请日：1999-03-01

Inventor： AMMAR DERRAA

IPC: H01J001/62

CPC classification number: H01J9/185 ,  H01J31/127 ,  H01J2201/319

Abstract: Field emitter display (FED) assemblies and methods of forming field emitter display (FED) assemblies are described. In one embodiment, a substrate is provided having a column line formed and supported thereby. A plurality of field emitter tip regions are formed and disposed in operable proximity to the column line. At least some of the regions define different pixels of the display. A continuous resistor is interposed between the column line and at least two different pixels. In another embodiment, a column line is formed and supported by a substrate. A plurality of field emitter tip regions are formed and disposed in operable proximity to the column line. The regions define different pixels of the display. A single current-limiting resistor is operably coupled with the column line and at least two different pixels. In yet another embodiment, a series of column lines are formed over a substrate. A series of field emitter tip regions are formed and arranged into discrete pixels which are disposed in operable proximity to individual respective column lines. A series of resistor strips is formed and supported by the substrate. The resistor strips individually underlie respective individual series of field emitter tip regions. The individual resistor strips operably connect respective column lines and field emitter tip regions. At least one of the resistor strips operably connects its associated column line and at least two different discrete pixels. Other embodiments are described.

Abstract translation: 描述了场发射器显示（FED）组件和形成场发射器显示（FED）组件的方法。 在一个实施例中，提供具有形成并由其支撑的列线的基板。 多个场发射极尖端区域形成并布置成可操作地接近列线。 至少一些区域定义显示器的不同像素。 在列线和至少两个不同的像素之间插入连续电阻。 在另一个实施例中，柱线由衬底形成并支撑。 多个场发射极尖端区域形成并布置成可操作地接近列线。 这些区域定义显示器的不同像素。 单个限流电阻器与列线和至少两个不同的像素可操作地耦合。 在另一个实施例中，在衬底上形成一系列列线。 一系列场发射器尖端区域形成并布置成离散的像素，这些离散像素设置成可操作地接近各个相应的列线。 一系列电阻条由衬底形成并支撑。 电阻带分别位于各个系列的场发射器尖端区域的下面。 各个电阻条可操作地连接相应的列线和场发射极尖端区域。 电阻条中的至少一个可操作地连接其相关联的列线和至少两个不同的离散像素。 描述其他实施例。

公开(公告)号：US20020163287A1

公开(公告)日：2002-11-07

申请号：US09846209

申请日：2001-05-02

Inventor： Huang Chung Cheng ,  Fu-Guo Tarntair

IPC: H01J001/02 ,  H01J063/04

CPC classification number: H01L27/124 ,  B82Y10/00 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2201/319 ,  H01L27/1214 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/952

Abstract: The present invention proposes a field emitting display, wherein a field emitting array is formed on a glass substrate. The field emitting array comprises a plurality of arrays of thin film transistors and a plurality of carbon nanotubes used as field emitting cathodes. The magnitude and stability of the field-emitted current of the carbon nanotubes are controlled by using the thin film transistors. The present invention has the characteristics of high quality, large area, and low cost.

Abstract translation: 本发明提出一种场发射显示器，其中在玻璃基板上形成场发射阵列。 场发射阵列包括多个薄膜晶体管阵列和用作场发射阴极的多个碳纳米管。 通过使用薄膜晶体管来控制碳纳米管的场发射电流的大小和稳定性。 本发明具有质量高，面积大，成本低的特点。