公开(公告)号：KR1020130019332A

公开(公告)日：2013-02-26

申请号：KR1020110117872

申请日：2011-11-11

Applicant: 유비머트리얼즈주식회사

Inventor： 박재근 ,  박진형 ,  임재형 ,  조종영 ,  최호 ,  황희섭

IPC: C09K3/14

CPC classification number: C23F1/30 ,  C09G1/02 ,  C23F3/06

Abstract: PURPOSE: A slurry composition for chemical mechanical polishing is provided to prevent the slurry discoloration problem, to have excellent etching selection ratio between metallic layers and to be applied to a chemical mechanical polishing process. CONSTITUTION: A slurry composition for chemical mechanical polishing comprises an abrasive and an abrasive accelerator. The abrasive comprises colloid silica which is dispersed in ultrapure water. The abrasive accelerator comprises 0.5-2 weight% hydrogen peroxide liquid, 0.05-1 weight% of ammonium persulfate, 0.01-0.1 weight% of iron nitrate. The content of the colloid silica is 2-4 weight%. The etching selection ratio of the tungsten and nitride titanium is 1:1.5-2. The pH of the composition is 2-4.

Abstract translation: 目的：提供用于化学机械抛光的浆料组合物，以防止浆料变色问题，在金属层之间具有优异的蚀刻选择比，并应用于化学机械抛光工艺。 构成：用于化学机械抛光的浆料组合物包括研磨剂和磨料加速剂。 研磨剂包括分散在超纯水中的胶体二氧化硅。 研磨剂包括0.5-2重量％的过氧化氢液体，0.05-1重量％的过硫酸铵，0.01-0.1重量％的硝酸铁。 胶体二氧化硅的含量为2-4重量％。 钨和氮化钛的蚀刻选择比为1：1.5-2。 组合物的pH为2-4。